Application relevant evaluation of trapping effects in AlGaN/GaN HEMTs with Fe-doped buffer O Axelsson, S Gustafsson, H Hjelmgren, N Rorsman, H Blanck, ...
IEEE Transactions on Electron Devices 63 (1), 326-332, 2015
82 2015 Impact of trapping effects on the recovery time of GaN based low noise amplifiers O Axelsson, N Billström, N Rorsman, M Thorsell
IEEE Microwave and wireless components letters 26 (1), 31-33, 2015
35 2015 Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx T Huang, A Malmros, J Bergsten, S Gustafsson, O Axelsson, M Thorsell, ...
IEEE Electron Device Letters 36 (6), 537-539, 2015
35 2015 The effect of forward gate bias stress on the noise performance of mesa isolated GaN HEMTs O Axelsson, M Thorsell, K Andersson, N Rorsman
IEEE Transactions on Device and Materials Reliability 15 (1), 40-46, 2014
15 2014 Fabrication and Characterization of Thin-Barrier JG Felbinger, M Fagerlind, O Axelsson, N Rorsman, X Gao, S Guo, ...
IEEE electron device letters 32 (7), 889-891, 2011
14 2011 Impact of AlGaN/GaN interface and passivation on the robustness of low-noise amplifiers T Huang, O Axelsson, J Bergsten, M Thorsell, N Rorsman
IEEE Transactions on Electron Devices 67 (6), 2297-2303, 2020
12 2020 Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx T Huang, O Axelsson, TNT Do, M Thorsell, D Kuylenstierna, N Rorsman
IEEE Transactions on Electron Devices 63 (10), 3887-3892, 2016
9 2016 Achieving low-recovery time in AlGaN/GaN HEMTs with AlN interlayer under low-noise amplifiers operation T Huang, O Axelsson, J Bergsten, M Thorsell, N Rorsman
IEEE Electron Device Letters 38 (7), 926-928, 2017
8 2017 Highly linear gallium nitride MMIC LNAs O Axelsson, K Andersson
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2012
7 2012 Low-pressure-chemical-vapor-deposition SiNx passivated AlGaN/GaN HEMTs for power amplifier application T Huang, O Axelsson, A Malmros, J Bergsten, S Gustafsson, M Thorsell, ...
2015 Asia-Pacific Microwave Conference (APMC) 3, 1-3, 2015
3 2015 Design and characterization of a highly linear 3 GHz GaN HEMT amplifier P Chehrenegar, O Axelsson, J Grahn, N Rorsman, JG Felbinger, ...
2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits …, 2011
2 2011 Noise temperature of an electronic tuner for noise parameter measurement systems O Axelsson, M Thorsell, K Andersson, J Stenarson, Y Rolain
79th ARFTG Microwave Measurement Conference, 1-2, 2012
1 2012 2015 Index IEEE Transactions on Device and Materials Reliability Vol. 15 MA Alam, A Alkhazali, FA Altolaguirre, Z An, MG Ancona, K Andersson, ...
IEEE Transactions on Device and Materials Reliability 15 (4), 641, 2015
2015 Gallium Nitride Low Noise Amplifiers for Highly Linear and Robust Microwave Receivers O Axelsson
Department of Microtechnology and Nanoscience, Chalmers University of Technology, 2013
2013 Foreword to the Special Section on ‘‘Design for Reliability and Yield for Ultimate CMOS Technologies’’......... 2 S Das, DM Bull, PN Whatmough, TK Chiang, O Axelsson, M Thorsell, ...
