Gerhard Klimeck

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87 artikel

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Timothy BoykinUniversity of Alabama in HuntsvilleEmail yang diverifikasi di uah.edu
Rajib RahmanProfessor of Physics, University of New South WalesEmail yang diverifikasi di unsw.edu.au
Michael PovolotskyiJacobs TechnologiesEmail yang diverifikasi di jacobs.com
Mathieu LuisierETH ZurichEmail yang diverifikasi di iis.ee.ethz.ch
Tillmann KubisPurdue UniversityEmail yang diverifikasi di purdue.edu
Roger K. LakeUniversity of California RiversideEmail yang diverifikasi di ece.ucr.edu
Sven RoggeProfessor of Physics, University of New South WalesEmail yang diverifikasi di unsw.edu.au
Hoon Ryu (류훈)Kumoh National Institute of TechnologyEmail yang diverifikasi di kumoh.ac.kr
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityEmail yang diverifikasi di purdue.edu
Abhijeet paulGraduate Student Purdue University, Device Engineer GlobalfoundriesEmail yang diverifikasi di globalfoundries.com
Seungwon LeeNASA Jet Propulsion Laboratory, California Institute of TechnologyEmail yang diverifikasi di jpl.nasa.gov
Yaohua TanUniversity of VirginiaEmail yang diverifikasi di purdue.edu
Saumitra MehrotraNXP SemiconductorsEmail yang diverifikasi di nxp.com
Andrea MorelloScientia Professor of Quantum Engineering, University of New South WalesEmail yang diverifikasi di unsw.edu.au
Tarek AmeenComponent Design Engineer at IntelEmail yang diverifikasi di intel.com
Susan CoppersmithProfessor of Physics, University of New South WalesEmail yang diverifikasi di unsw.edu.au
Neophytos NeophytouSchool of Engineering, University of WarwickEmail yang diverifikasi di warwick.ac.uk
Muhammad UsmanCSIRO's Data61 and The University of Melbourne, AustraliaEmail yang diverifikasi di alumni.purdue.edu
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityEmail yang diverifikasi di purdue.edu
Zhengping JiangSamsung Semiconductor Inc.Email yang diverifikasi di samsung.com

Ikuti

Gerhard Klimeck

Professor of Electrical and Computer Engineering, Purdue University

Email yang diverifikasi di purdue.edu - Beranda

nanoelectronics electron transport quantum dots coulomb blockade high performance computing


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Silicon quantum electronics FA Zwanenburg, AS Dzurak, A Morello, MY Simmons, LCL Hollenberg, ... Reviews of modern physics 85 (3), 961-1019, 2013	1426	2013
A single-atom transistor M Fuechsle, JA Miwa, S Mahapatra, H Ryu, S Lee, O Warschkow, ... Nature nanotechnology 7 (4), 242-246, 2012	1183	2012
Single and multiband modeling of quantum electron transport through layered semiconductor devices R Lake, G Klimeck, RC Bowen, D Jovanovic Journal of Applied Physics 81 (12), 7845-7869, 1997	1039	1997
Valence band effective-mass expressions in the sp 3 d 5 s* empirical tight-binding model applied to a Si and Ge parametrization TB Boykin, G Klimeck, F Oyafuso Physical Review B 69 (11), 115201, 2004	518	2004
Atomistic simulation of nanowires in the tight-binding formalism: From boundary conditions to strain calculations M Luisier, A Schenk, W Fichtner, G Klimeck Physical Review B—Condensed Matter and Materials Physics 74 (20), 205323, 2006	513	2006
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro, N Collaert, ... Nature Physics 4 (8), 656-661, 2008	454	2008
Ohm’s law survives to the atomic scale B Weber, S Mahapatra, H Ryu, S Lee, A Fuhrer, TCG Reusch, ... Science 335 (6064), 64-67, 2012	389	2012
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting CH Yang, A Rossi, R Ruskov, NS Lai, FA Mohiyaddin, S Lee, C Tahan, ... Nature communications 4 (1), 2069, 2013	377	2013
Computational Electronics: semiclassical and quantum device modeling and simulation D Vasileska, SM Goodnick, G Klimeck CRC press, 2017	367	2017
Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory TB Boykin, G Klimeck, RC Bowen, F Oyafuso Physical Review B 66 (12), 125207, 2002	321	2002
Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures S Lee, F Oyafuso, P Von Allmen, G Klimeck Physical Review B 69 (4), 045316, 2004	301	2004
nanohub. org: Advancing education and research in nanotechnology G Klimeck, M McLennan, SP Brophy, GB Adams III, MS Lundstrom Computing in Science & Engineering 10 (5), 17-23, 2008	300	2008
Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part I: Models and benchmarks G Klimeck, SS Ahmed, H Bae, N Kharche, S Clark, B Haley, S Lee, ... IEEE Transactions on Electron Devices 54 (9), 2079-2089, 2007	295	2007
Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering M Luisier, G Klimeck Physical Review B—Condensed Matter and Materials Physics 80 (15), 155430, 2009	283	2009
Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots G Klimeck, F Oyafuso, TB Boykin, RC Bowen, P von Allmen	279	2002
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015	250	2015
Electronic properties of silicon nanowires Y Zheng, C Rivas, R Lake, K Alam, TB Boykin, G Klimeck IEEE transactions on electron devices 52 (6), 1097-1103, 2005	246	2005
NEMO5: A parallel multiscale nanoelectronics modeling tool S Steiger, M Povolotskyi, HH Park, T Kubis, G Klimeck IEEE Transactions on Nanotechnology 10 (6), 1464-1474, 2011	241	2011
Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions S Lee, L Jönsson, JW Wilkins, GW Bryant, G Klimeck Physical Review B 63 (19), 195318, 2001	234	2001
Valley splitting in strained silicon quantum wells TB Boykin, G Klimeck, MA Eriksson, M Friesen, SN Coppersmith, ... Applied Physics Letters 84 (1), 115-117, 2004	232	2004

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