| Fabrication of non-polar GaN based highly responsive and fast UV photodetector A Gundimeda, S Krishna, N Aggarwal, A Sharma, ND Sharma, KK Maurya, ... Applied Physics Letters 110 (10), 2017 | 229 | 2017 |
| ZnO/GaN heterojunction based self-powered photodetectors: influence of interfacial states on UV sensing M Mishra, A Gundimeda, T Garg, A Dash, S Das, G Gupta Applied Surface Science 478, 1081-1089, 2019 | 97 | 2019 |
| Surface-engineered nanostructure-based efficient nonpolar GaN ultraviolet photodetectors M Mishra, A Gundimeda, S Krishna, N Aggarwal, L Goswami, B Gahtori, ... ACS omega 3 (2), 2304-2311, 2018 | 45 | 2018 |
| Defect induced broadband visible to near-infrared luminescence in ZnAl2O4 nanocrystals M Jain, A Gundimeda, S Kumar, G Gupta, SO Won, KH Chae, A Vij, ... Applied Surface Science 480, 945-950, 2019 | 42 | 2019 |
| Effect of metal contacts on a GaN/sapphire-based MSM ultraviolet photodetector SK Jain, S Krishna, N Aggarwal, R Kumar, A Gundimeda, SC Husale, ... Journal of Electronic Materials 47, 6086-6090, 2018 | 38 | 2018 |
| A strategy to design lanthanide doped dual-mode phosphor mediated spectral convertor for solar cell applications P Kumar, S Singh, R Lahon, A Gundimeda, G Gupta, BK Gupta Journal of Luminescence 196, 207-213, 2018 | 38 | 2018 |
| Enhanced near-infrared luminescence in zinc aluminate bestowed by fuel-blended combustion approach M Jain, A Gundimeda, A Kumar, S Kumar, G Gupta, SO Won, KH Chae, ... Journal of Alloys and Compounds 797, 148-158, 2019 | 28 | 2019 |
| Correlation of donor-acceptor pair emission on the performance of GaN-based UV photodetector S Krishna, N Aggarwal, A Gundimeda, A Sharma, S Husale, KK Maurya, ... Materials Science in Semiconductor Processing 98, 59-64, 2019 | 28 | 2019 |
| Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films M Mishra, A Gundimeda, S Krishna, N Aggarwal, B Gahtori, N Dilawar, ... Physical Chemistry Chemical Physics 19 (13), 8787-8801, 2017 | 27 | 2017 |
| Impact on photon-assisted charge carrier transport by engineering electrodes of GaN based UV photodetectors N Aggarwal, S Krishna, SK Jain, A Arora, L Goswami, A Sharma, ... Journal of Alloys and Compounds 785, 883-890, 2019 | 21 | 2019 |
| Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy C Ramesh, P Tyagi, G Abhiram, G Gupta, MS Kumar, SS Kushvaha Journal of Crystal Growth 509, 23-28, 2019 | 19 | 2019 |
| Photoluminescence efficiency of zincblende InGaN/GaN quantum wells SA Church, M Quinn, K Cooley-Greene, B Ding, A Gundimeda, ... Journal of Applied Physics 129 (17), 2021 | 16 | 2021 |
| Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer N Aggarwal, S Krishna, L Goswami, SK Jain, A Pandey, A Gundimeda, ... SN Applied Sciences 3, 1-10, 2021 | 15 | 2021 |
| Influence of current conduction paths and native defects on gas sensing properties of polar and non-polar GaN A Dash, A Sharma, SK Jain, BSK Patra, A Gundimeda, S Mallik, G Gupta Journal of Alloys and Compounds 898, 162808, 2022 | 14 | 2022 |
| Electronic structure and chemical state analysis of nanoflowers decorated GaN and AlGaN/GaN heterostructure M Mishra, S Krishna, N Aggarwal, A Gundimeda, G Gupta Journal of Alloys and Compounds 708, 385-391, 2017 | 11 | 2017 |
| Influence of AlxGa1-xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si (001) A Gundimeda, M Rostami, M Frentrup, A Hinz, MJ Kappers, DJ Wallis, ... Journal of Physics D: Applied Physics 55, 175110, 2022 | 8 | 2022 |
| Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1− xN nucleation layers A Gundimeda, M Frentrup, SM Fairclough, MJ Kappers, DJ Wallis, ... Journal of Applied Physics 131 (11), 2022 | 7 | 2022 |
| Influence of wet chemical etching on electronic structure and optical response of polar (0001) GaN films A Gundimeda, M Mishra, G Gupta Materials Chemistry and Physics 230, 326-330, 2019 | 6 | 2019 |
| MOVPE studies of zincblende GaN on 3C-SiC/Si (0 0 1) TJ Wade, A Gundimeda, MJ Kappers, M Frentrup, SM Fairclough, ... Journal of Crystal Growth 611, 127182, 2023 | 5 | 2023 |
| Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity Y Grishchenko, J Dawson, S Ghosh, A Gundimeda, BF Spiridon, ... Journal of Magnetism and Magnetic Materials 580, 170877, 2023 | 3 | 2023 |
Prof. Dr. Govind Gupta, FInstP, FRSC,...Chief Scientist & Professor, CSIR - National Physical Laboratory, New DelhiEmail yang diverifikasi di nplindia.org