Zlatko Sitar

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Ramon CollazoProfessor of Materials Science and Engineering, NCSUEmail yang diverifikasi di ncsu.edu
Ronny KirsteResearch associate, NCSUEmail yang diverifikasi di ncsu.edu
Raoul SchlesserHexaTech, Inc.Email yang diverifikasi di hexatechinc.com
Pramod ReddyAdroit Materials, North Carolina State UniversityEmail yang diverifikasi di ncsu.edu
Robert F. DavisCarnegie Mellon UniversityEmail yang diverifikasi di andrew.cmu.edu
Jinqiao XieQorvo IncEmail yang diverifikasi di qorvo.com
Douglas L IrvingNorth Carolina State UniversityEmail yang diverifikasi di ncsu.edu
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinEmail yang diverifikasi di tu-berlin.de
Michael DudleyStony Brook Univ., Univ. of Warwick, Strathclyde Univ., Université Pierre et Marie Curie (Paris 6)Email yang diverifikasi di stonybrook.edu
HS CraftNorth Carolina State University, HexaTechEmail yang diverifikasi di hexatechinc.com
Balaji RaghothamacharStony Brook UniversityEmail yang diverifikasi di stonybrook.edu
Benjamin E. GaddyClean Energy TrustEmail yang diverifikasi di bengaddy.com
Robert J. NemanichDepartment of Physics, Arizona State UniversityEmail yang diverifikasi di asu.edu
Michal BockowskiInstitute of High Pressure Physics PASEmail yang diverifikasi di unipress.waw.pl
Colin WoldenProfessor of Chemical and Biological Engineering, Colorado School of MinesEmail yang diverifikasi di mines.edu
Dietz NikolausGeorgia State UniversityEmail yang diverifikasi di gsu.edu
Mark D. LosegoGeorgia TechEmail yang diverifikasi di gatech.edu
Ziad HerroLebanese UniversityEmail yang diverifikasi di ul.edu.lb
Martin FenebergResearcher, Otto von Guericke University MagdeburgEmail yang diverifikasi di ovgu.de
Gordon CallsenUniversity of Bremen, Institute of Solid State PhysicsEmail yang diverifikasi di ifp.uni-bremen.de

Ikuti

Zlatko Sitar

Kobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina State

Email yang diverifikasi di ncsu.edu

thin films semiconductors crystal growth optoelectronic devices electronic devices


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018	1432	2018
Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy MJ Paisley, Z Sitar, JB Posthill, RF Davis Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989	502	1989
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	479	2020
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ... Materials Science and Engineering: B 1 (1), 77-104, 1988	284	1988
Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar physica status solidi c 8 (7‐8), 2031-2033, 2011	212	2011
Universal phonon mean free path spectra in crystalline semiconductors at high temperature JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen Scientific reports 3 (1), 2963, 2013	194	2013
On the origin of the 265 nm absorption band in AlN bulk crystals R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ... Applied Physics Letters 100 (19), 2012	189	2012
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ... Journal of The Electrochemical Society 158 (5), H530, 2011	179	2011
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo Applied Physics Letters 106 (14), 2015	171	2015
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides I Bryan, Z Bryan, S Mita, A Rice, J Tweedie, R Collazo, Z Sitar Journal of Crystal Growth 438, 81-89, 2016	167	2016
Seeded growth of AlN bulk crystals in m-and c-orientation P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ... Journal of Crystal Growth 312 (1), 58-63, 2009	166	2009
Seeded growth of AlN bulk single crystals by sublimation R Schlesser, R Dalmau, Z Sitar Journal of crystal growth 241 (4), 416-420, 2002	165	2002
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ... Applied Physics Express 5 (5), 055504, 2012	159	2012
Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy Z Sitar, MJ Paisley, B Yan, J Ruan, WJ Choyke, RF Davis Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990	158	1990
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar Journal of Applied Physics 108 (4), 2010	157	2010
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ... Applied Physics Express 5 (12), 122101, 2012	155	2012
Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, T Obata, T Nagashima, H Yanagi, B Moody, S Mita, S Inoue, ... Applied Physics Express 6 (9), 092103, 2013	151	2013
The role of surface kinetics on composition and quality of AlGaN I Bryan, Z Bryan, S Mita, A Rice, L Hussey, C Shelton, J Tweedie, ... Journal of Crystal Growth 451, 65-71, 2016	147	2016
On compensation in Si-doped AlN JS Harris, JN Baker, BE Gaddy, I Bryan, Z Bryan, KJ Mirrielees, P Reddy, ... Applied Physics Letters 112 (15), 2018	146	2018
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ... Applied Physics Letters 112 (6), 2018	145	2018

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