Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs M Luysberg, H Sohn, A Prasad, P Specht, Z Liliental-Weber, ER Weber, ...
Journal of applied physics 83 (1), 561-566, 1998
168 1998 Structural and optical properties of vertically aligned InP quantum dots MK Zundel, P Specht, K Eberl, NY Jin-Phillipp, F Phillipp
Applied physics letters 71 (20), 2972-2974, 1997
163 1997 High-resolution in situ and ex situ TEM studies on graphene formation and growth on Pt nanoparticles Z Peng, F Somodi, S Helveg, C Kisielowski, P Specht, AT Bell
Journal of Catalysis 286, 22-29, 2012
141 2012 Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs M Haiml, U Siegner, F Morier-Genoud, U Keller, M Luysberg, P Specht, ...
Applied physics letters 74 (9), 1269-1271, 1999
106 1999 Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies M Haiml, U Siegner, F Morier-Genoud, U Keller, M Luysberg, RC Lutz, ...
Applied physics letters 74 (21), 3134-3136, 1999
101 1999 Real-time sub- C Kisielowski, LW Wang, P Specht, HA Calderon, B Barton, B Jiang, ...
Physical Review B—Condensed Matter and Materials Physics 88 (2), 024305, 2013
76 2013 Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy P Specht, JC Ho, X Xu, R Armitage, ER Weber, R Erni, C Kisielowski
Solid state communications 135 (5), 340-344, 2005
68 2005 Distortion and segregation in a dislocation core region at atomic resolution X Xu, SP Beckman, P Specht, ER Weber, DC Chrzan, RP Erni, I Arslan, ...
Physical review letters 95 (14), 145501, 2005
67 2005 Observing gas-catalyst dynamics at atomic resolution and single-atom sensitivity S Helveg, CF Kisielowski, JR Jinschek, P Specht, G Yuan, H Frei
Micron 68, 176-185, 2015
66 2015 Defect identification in GaAs grown at low temperatures by positron annihilation J Gebauer, F Börner, R Krause-Rehberg, TEM Staab, ...
Journal of Applied Physics 87 (12), 8368-8379, 2000
57 2000 Discovering Hidden Material Properties of MgCl2 at Atomic Resolution with Structured Temporal Electron Illumination of Picosecond Time Resolution C Kisielowski, P Specht, B Freitag, ER Kieft, W Verhoeven, JFM van Rens, ...
Advanced Functional Materials 29 (11), 1807818, 2019
53 2019 Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs JD Greenlee, P Specht, TJ Anderson, AD Koehler, BD Weaver, ...
Applied physics letters 107 (8), 2015
50 2015 Phase separation in In x Ga1− x N TP Bartel, P Specht, JC Ho, C Kisielowski
Philosophical Magazine 87 (13), 1983-1998, 2007
50 2007 Analysis of twin defects in GaAs (111) B molecular beam epitaxy growth Y Park, MJ Cich, R Zhao, P Specht, ER Weber, E Stach, S Nozaki
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
49 2000 The influence of structural properties on conductivity and luminescence of MBE grown InN P Specht, R Armitage, J Ho, E Gunawan, Q Yang, X Xu, C Kisielowski, ...
Journal of crystal growth 269 (1), 111-118, 2004
48 2004 Atomic resolution phase contrast imaging and in-line holography using variable voltage and dose rate B Barton, B Jiang, CY Song, P Specht, H Calderon, C Kisielowski
Microscopy and Microanalysis 18 (5), 982-994, 2012
45 2012 Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C P Specht, RC Lutz, R Zhao, ER Weber, WK Liu, K Bacher, FJ Towner, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
45 1999 Constricted dislocations and their use for TEM measurements of the velocities of edge and 60° dislocations in silicon. A new approach to the problem of kink migration H Gottschalk, N Hiller, S Sauerland, P Specht, H Alexander
physica status solidi (a) 138 (2), 547-555, 1993
45 1993 Defect control in As-rich GaAs P Specht, S Jeong, H Sohn, M Luysberg, A Prasad, J Gebauer, ...
Materials Science Forum 258, 951-956, 1997
44 1997 Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs AD Koehler, P Specht, TJ Anderson, BD Weaver, JD Greenlee, MJ Tadjer, ...
IEEE Electron Device Letters 35 (12), 1194-1196, 2014
43 2014 