Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique XH Ma, JJ Zhu, XY Liao, T Yue, WW Chen, Y Hao
Applied Physics Letters 103 (3), 2013
112 2013 Improved interface and transport properties of AlGaN/GaN MIS-HEMTs with PEALD-grown AlN gate dielectric JJ Zhu, XH Ma, Y Xie, B Hou, WW Chen, JC Zhang, Y Hao
IEEE Transactions on Electron Devices 62 (2), 512-518, 2014
96 2014 Ferroelectric gate AlGaN/GaN E-mode HEMTs with high transport and sub-threshold performance J Zhu, L Chen, J Jiang, X Lu, L Yang, B Hou, M Liao, Y Zhou, X Ma, Y Hao
IEEE Electron Device Letters 39 (1), 79-82, 2017
44 2017 Millimeter-wave power AlGaN/GaN HEMT using surface plasma treatment of access region M Mi, XH Ma, L Yang, Y Lu, B Hou, J Zhu, M Zhang, HS Zhang, Q Zhu, ...
IEEE Transactions on Electron Devices 64 (12), 4875-4881, 2017
42 2017 Investigation of gate leakage mechanism in Al2O3/Al0. 55Ga0. 45N/GaN metal-oxide-semiconductor high-electron-mobility transistors JJ Zhu, XH Ma, B Hou, WW Chen, Y Hao
Applied Physics Letters 104 (15), 2014
40 2014 Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge L Yang, M Mi, B Hou, H Zhang, J Zhu, Q Zhu, Y Lu, M Zhang, Y He, ...
IEEE Electron Device Letters 38 (11), 1563-1566, 2017
37 2017 Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis JJ Zhu, XH Ma, B Hou, WW Chen, Y Hao
Aip Advances 4 (3), 2014
36 2014 An overview on analyses and suppression methods of trapping effects in AlGaN/GaN HEMTs R Ye, X Cai, C Du, H Liu, Y Zhang, X Duan, J Zhu
IEEE Access 10, 21759-21773, 2021
35 2021 Influence of fin-like configuration parameters on the linearity of AlGaN/GaN HEMTs P Wang, X Ma, M Mi, M Zhang, J Zhu, Y Zhou, S Wu, J Liu, L Yang, B Hou, ...
IEEE Transactions on Electron Devices 68 (4), 1563-1569, 2021
35 2021 High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si L Yang, M Zhang, B Hou, M Mi, M Wu, Q Zhu, J Zhu, Y Lu, L Chen, X Zhou, ...
IEEE Transactions on Electron Devices 66 (3), 1202-1207, 2019
33 2019 90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application MH Mi, XH Ma, L Yang, BH Bin-Hou, JJ Zhu, YL He, M Zhang, S Wu, ...
Applied Physics Letters 111 (17), 2017
31 2017 Analysis of low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs for terminal applications Y Zhou, J Zhu, M Mi, M Zhang, P Wang, Y Han, S Wu, J Liu, Q Zhu, ...
IEEE Journal of the Electron Devices Society 9, 756-762, 2021
30 2021 Influence of defects in n−-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors DG Zhao, DS Jiang, JJ Zhu, ZS Liu, SM Zhang, JW Liang, H Yang, X Li, ...
Applied physics letters 90 (6), 2007
30 2007 High linearity and high power performance with barrier layer of sandwich structure and Al0. 05GaN back barrier for X-band application B Hou, L Yang, M Mi, M Zhang, C Yi, M Wu, Q Zhu, Y Lu, J Zhu, X Zhou, ...
Journal of Physics D: Applied Physics 53 (14), 145102, 2020
28 2020 The influence of Fe doping tail in unintentionally doped GaN layer on DC and RF performance of AlGaN/GaN HEMTs F Jia, X Ma, L Yang, B Hou, M Zhang, Q Zhu, M Wu, M Mi, J Zhu, S Liu, ...
IEEE Transactions on Electron Devices 68 (12), 6069-6075, 2021
24 2021 High-performance enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based source contact ledge and two-step fluorine treatment L Yang, B Hou, M Mi, Q Zhu, M Wu, J Zhu, Y Lu, M Zhang, L Chen, X Zhou, ...
IEEE Electron Device Letters 39 (10), 1544-1547, 2018
23 2018 Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes J Yang, DG Zhao, DS Jiang, P Chen, ZS Liu, JJ Zhu, XJ Li, XG He, JP Liu, ...
Optics Express 24 (13), 13824-13831, 2016
23 2016 Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors XH Ma, WW Chen, B Hou, K Zhang, JJ Zhu, JC Zhang, XF Zheng, Y Hao
Applied Physics Letters 104 (9), 2014
23 2014 0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2 O3 /AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique B Hou, X Ma, J Zhu, L Yang, W Chen, M Mi, Q Zhu, L Chen, R Zhang, ...
IEEE Electron Device Letters 39 (3), 397-400, 2018
21 2018 Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al2 O3 /AlN Gate-Stack J Zhu, Q Zhu, L Chen, B Hou, L Yang, X Zhou, X Ma, Y Hao
IEEE Transactions on Electron Devices 64 (3), 840-847, 2017
21 2017 
Xiaohua MaXidian UniversityEmail verificata su xidian.edu.cn