| Control of spin precession in a spin-injected field effect transistor HC Koo, JH Kwon, J Eom, J Chang, SH Han, M Johnson Science 325 (5947), 1515-1518, 2009 | 781 | 2009 |
| High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films MW Iqbal, MZ Iqbal, MF Khan, MA Shehzad, Y Seo, JH Park, C Hwang, ... Scientific reports 5 (1), 10699, 2015 | 352 | 2015 |
| Comparison of frictional forces on graphene and graphite H Lee, N Lee, Y Seo, J Eom, SW Lee Nanotechnology 20 (32), 325701, 2009 | 265 | 2009 |
| Raman fingerprint of doping due to metal adsorbates on graphene MW Iqbal, AK Singh, MZ Iqbal, J Eom Journal of Physics: Condensed Matter 24 (33), 335301, 2012 | 182 | 2012 |
| Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance HMW Khalil, MF Khan, J Eom, H Noh ACS applied materials & interfaces 7 (42), 23589-23596, 2015 | 166 | 2015 |
| Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method S Hussain, J Singh, D Vikraman, AK Singh, MZ Iqbal, MF Khan, P Kumar, ... Scientific reports 6 (1), 30791, 2016 | 156 | 2016 |
| Phase dependent thermopower in Andreev interferometers J Eom, CJ Chien, V Chandrasekhar Physical review letters 81 (2), 437, 1998 | 135 | 1998 |
| Electrical spin injection and detection in an InAs quantum well HC Koo, H Yi, JB Ko, J Chang, SH Han, D Jung, SG Huh, J Eom Applied physics letters 90 (2), 2007 | 110 | 2007 |
| Synthesis and characterization of large-area and continuous MoS 2 atomic layers by RF magnetron sputtering S Hussain, MA Shehzad, D Vikraman, MF Khan, J Singh, DC Choi, Y Seo, ... Nanoscale 8 (7), 4340-4347, 2016 | 102 | 2016 |
| Quantum Hall ferromagnetism in a two-dimensional electron system J Eom, H Cho, W Kang, KL Campman, AC Gossard, M Bichler, ... Science 289 (5488), 2320-2323, 2000 | 102 | 2000 |
| Bipolar junction transistor exhibiting excellent output characteristics with a prompt response against the selective protein G Dastgeer, ZM Shahzad, H Chae, YH Kim, BM Ko, J Eom Advanced Functional Materials 32 (38), 2204781, 2022 | 94 | 2022 |
| Spin valve effect of NiFe/graphene/NiFe junctions MZ Iqbal, MW Iqbal, JH Lee, YS Kim, SH Chun, J Eom Nano Research 6, 373-380, 2013 | 94 | 2013 |
| n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration A Rehman, MF Khan, MA Shehzad, S Hussain, MF Bhopal, SH Lee, ... ACS applied materials & interfaces 8 (43), 29383-29390, 2016 | 86 | 2016 |
| Molecular n-doping of chemical vapor deposition grown graphene AK Singh, MW Iqbal, VK Singh, MZ Iqbal, JH Lee, SH Chun, K Shin, ... Journal of Materials Chemistry 22 (30), 15168-15174, 2012 | 86 | 2012 |
| Deep-ultraviolet-light-driven reversible doping of WS 2 field-effect transistors MW Iqbal, MZ Iqbal, MF Khan, MA Shehzad, Y Seo, J Eom Nanoscale 7 (2), 747-757, 2015 | 73 | 2015 |
| Ultimate limit in size and performance of WSe2 vertical diodes G Nazir, H Kim, J Kim, KS Kim, DH Shin, MF Khan, DS Lee, JY Hwang, ... Nature communications 9 (1), 5371, 2018 | 71 | 2018 |
| Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode G Dastgeer, MF Khan, G Nazir, AM Afzal, S Aftab, BA Naqvi, J Cha, ... ACS applied materials & interfaces 10 (15), 13150-13157, 2018 | 71 | 2018 |
| Improving the electrical properties of graphene layers by chemical doping MF Khan, MZ Iqbal, MW Iqbal, J Eom Science and Technology of Advanced Materials 15 (5), 055004, 2014 | 68 | 2014 |
| Enhanced photoresponse of ZnO quantum dot-decorated MoS 2 thin films G Nazir, MF Khan, I Akhtar, K Akbar, P Gautam, H Noh, Y Seo, SH Chun, ... RSC advances 7 (27), 16890-16900, 2017 | 67 | 2017 |
| Graphene: synthesis, properties and application in transparent electronic devices P Kumar, AK Singh, S Hussain, KN Hui, K San Hui, J Eom, J Jung, ... Reviews in Advanced Sciences and Engineering 2 (4), 238-258, 2013 | 66 | 2013 |