Segui
Dr. Bai Sun
Titolo
Citata da
Citata da
Anno
Synaptic devices based neuromorphic computing applications in artificial intelligence
B Sun, T Guo, G Zhou, S Ranjan, Y Jiao, L Wei, YN Zhou, YA Wu
Materials Today Physics 18, 100393, 2021
2262021
A unified capacitive-coupled memristive model for the nonpinched current–voltage hysteresis loop
B Sun, Y Chen, M Xiao, G Zhou, S Ranjan, W Hou, X Zhu, Y Zhao, ...
Nano letters 19 (9), 6461-6465, 2019
1652019
Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiOx Modulated by Moisture
G Zhou, S Duan, P Li, B Sun, B Wu, Y Yao, X Yang, J Han, J Wu, G Wang, ...
Advanced Electronic Materials 4 (4), 1700567, 2018
1642018
Volatile and nonvolatile memristive devices for neuromorphic computing
G Zhou, Z Wang, B Sun, F Zhou, L Sun, H Zhao, X Hu, X Peng, J Yan, ...
Advanced Electronic Materials 8 (7), 2101127, 2022
1602022
An organic nonvolatile resistive switching memory device fabricated with natural pectin from fruit peel
B Sun, X Zhang, G Zhou, P Li, Y Zhang, H Wang, Y Xia, Y Zhao
Organic Electronics 42, 181-186, 2017
1412017
Biomemristors as the next generation bioelectronics
B Sun, G Zhou, T Guo, YN Zhou, YA Wu
Nano Energy 75, 104938, 2020
1352020
Fabrication of CeO2 nanoparticle-modified silk for UV protection and antibacterial applications
Z Lu, C Mao, M Meng, S Liu, Y Tian, L Yu, B Sun, CM Li
Journal of colloid and interface science 435, 8-14, 2014
1342014
Resistive switching memory integrated with amorphous carbon-based nanogenerators for self-powered device
G Zhou, Z Ren, L Wang, J Wu, B Sun, A Zhou, G Zhang, S Zheng, S Duan, ...
Nano Energy 63, 103793, 2019
1312019
Artificial and wearable albumen protein memristor arrays with integrated memory logic gate functionality
G Zhou, Z Ren, L Wang, B Sun, S Duan, Q Song
Materials Horizons 6 (9), 1877-1882, 2019
1262019
Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor
G Zhou, B Sun, X Hu, L Sun, Z Zou, B Xiao, W Qiu, B Wu, J Li, J Han, ...
Advanced Science 8 (13), 2003765, 2021
1252021
Capacitive effect: An original of the resistive switching memory
G Zhou, Z Ren, B Sun, J Wu, Z Zou, S Zheng, L Wang, S Duan, Q Song
Nano Energy 68, 104386, 2020
1232020
Memristor‐Based Neuromorphic Chips
X Duan, Z Cao, K Gao, W Yan, S Sun, G Zhou, Z Wu, F Ren, B Sun
Advanced Materials 36 (14), 2310704, 2024
1212024
ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing
B Sun, G Zhou, L Sun, H Zhao, Y Chen, F Yang, Y Zhao, Q Song
Nanoscale Horizons 6 (12), 939-970, 2021
1202021
Enhanced resistive switching effect upon illumination in self-assembled NiWO4 nano-nests
B Sun, W Zhao, L Wei, H Li, P Chen
Chemical Communications 50 (86), 13142-13145, 2014
1152014
Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
G Zhou, B Sun, Y Yao, H Zhang, A Zhou, K Alameh, B Ding, Q Song
Applied Physics Letters 109 (14), 2016
1032016
Retracted Article: Light-controlled resistive switching memory of multiferroic BiMnO 3 nanowire arrays
B Sun, CM Li
Physical Chemistry Chemical Physics 17 (10), 6718-6721, 2015
972015
Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory
G Zhou, X Yang, L Xiao, B Sun, A Zhou
Applied Physics Letters 114 (16), 2019
952019
The DNA strand assisted conductive filament mechanism for improved resistive switching memory
B Sun, L Wei, H Li, X Jia, J Wu, P Chen
Journal of Materials Chemistry C 3 (46), 12149-12155, 2015
912015
From dead leaves to sustainable organic resistive switching memory
B Sun, S Zhu, S Mao, P Zheng, Y Xia, F Yang, M Lei, Y Zhao
Journal of colloid and interface science 513, 774-778, 2018
882018
Non–zero-crossing current-voltage hysteresis behavior in memristive system
B Sun, M Xiao, G Zhou, Z Ren, YN Zhou, YA Wu
Materials Today Advances 6, 100056, 2020
872020
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–20