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Advanced Functional Materials 29 (25), 1901106, 2019
257 2019 A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy X Feng, Y Li, L Wang, S Chen, ZG Yu, WC Tan, N Macadam, G Hu, ...
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Applied Physics Letters 118 (11), 2021
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121 2019 Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 X Gong, G Han, F Bai, S Su, P Guo, Y Yang, R Cheng, D Zhang, G Zhang, ...
IEEE Electron Device Letters 34 (3), 339-341, 2013
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87 2020 III–V Multiple-Gate Field-Effect Transistors With High-Mobility HC Chin, X Gong, L Wang, HK Lee, L Shi, YC Yeo
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76 2021 Aluminum-incorporated p-CuO/n-ZnO photocathode coated with nanocrystal-engineered TiO 2 protective layer for photoelectrochemical water splitting and hydrogen generation S Masudy-Panah, YJK Eugene, ND Khiavi, R Katal, X Gong
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72 2020 Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn) Y Yang, S Su, P Guo, W Wang, X Gong, L Wang, KL Low, G Zhang, C Xue, ...
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IEEE Transactions on Electron Devices 62 (1), 128-135, 2014
68 2014 
Yee-Chia YeoNational University of SingaporeEmail verificata su nus.edu.sg
