Construction of thin strain-relaxed SiGe layers and method for fabricating the same PS Chen, SW Lee, KF Liao, LJ Chen, CW Liu
US Patent 7,202,512, 2007
368 2007 Strained silicon fin field effect transistor CW Liu, ST Chang, SH Hwang
US Patent App. 10/785,515, 2004
277 2004 Low-temperature fabrication and characterization of Ge-on-insulator structures CY Yu, CY Lee, CH Lin, CW Liu
Applied Physics Letters 89 (10), 101913, 2006
272 2006 Thin-film solar cell having hetero-junction of semiconductor and method for fabricating the same CW Liu, CY Yu, WY Chen, CH Lin
US Patent App. 12/025,226, 2009
256 2009 Physical thickness 1. x nm ferroelectric HfZrOx negative capacitance FETs MH Lee, ST Fan, CH Tang, PG Chen, YC Chou, HH Chen, JY Kuo, MJ Xie, ...
2016 IEEE International Electron Devices Meeting (IEDM), 12.1. 1-12.1. 4, 2016
202 2016 Metal-insulator-semiconductor photodetectors CH Lin, CW Liu
Sensors 10 (10), 8797-8826, 2010
198 2010 Above-11%-efficiency organic–inorganic hybrid solar cells with omnidirectional harvesting characteristics by employing hierarchical photon-trapping structures WR Wei, ML Tsai, ST Ho, SH Tai, CR Ho, SH Tsai, CW Liu, RJ Chung, ...
Nano letters 13 (8), 3658-3663, 2013
194 2013 Mobility-enhancement technologies C Wee, S Maikop, CY Yu
IEEE Circuits and Devices Magazine 21 (3), 21-36, 2005
153 2005 Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x −y Gex y A St. Amour, CW Liu, JC Sturm, Y Lacroix, MLW Thewalt
Applied physics letters 67 (26), 3915-3917, 1995
148 1995 Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2 O3 WW Hsu, JY Chen, TH Cheng, SC Lu, WS Ho, YY Chen, YJ Chien, ...
Applied Physics Letters 100 (2), 023508, 2012
142 2012 Electron mobility enhancement in strained-germanium YJ Yang, WS Ho, CF Huang, ST Chang, CW Liu
Applied Physics Letters 91 (10), 102103, 2007
137 2007 Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics CW Liu, JC Sturm
Journal of applied physics 82 (9), 4558-4565, 1997
129 1997 Strain-enhanced photoluminescence from Ge direct transition TH Cheng, KL Peng, CY Ko, CY Chen, HS Lan, YR Wu, CW Liu, ...
Applied Physics Letters 96 (21), 211108, 2010
116 2010 Si/Si/sub 1-x-y/Gex Cy /Si heterojunction bipolar transistors LD Lanzerotti, AS Amour, CW Liu, JC Sturm, JK Watanabe, D Theodore
IEEE Electron Device Letters 17 (7), 334-337, 1996
112 1996 Comprehensive study of the Raman shifts of strained silicon and germanium CY Peng, CF Huang, YC Fu, YH Yang, CY Lai, ST Chang, CW Liu
Journal of Applied Physics 105 (8), 083537, 2009
109 2009 Realizing High-Efficiency Omnidirectional n-Type Si Solar Cells via the Hierarchical Architecture Concept with Radial Junctions HP Wang, TY Lin, CW Hsu, ML Tsai, CH Huang, WR Wei, MY Huang, ...
ACS nano 7 (10), 9325-9335, 2013
108 2013 Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes CW Liu, MH Lee, MJ Chen, IC Lin, CF Lin
Applied Physics Letters 76 (12), 1516-1518, 2000
106 2000 Quantum confinement effects in strained silicon‐germanium alloy quantum wells X Xiao, CW Liu, JC Sturm, LC Lenchyshyn, MLW Thewalt, RB Gregory, ...
Applied physics letters 60 (17), 2135-2137, 1992
89 1992 Observation of two-dimensional electron gas in a Si quantum well with mobility of TM Lu, DC Tsui, CH Lee, CW Liu
Applied Physics Letters 94 (18), 182102, 2009
87 2009 A novel photodetector using MOS tunneling structures CW Liu, WT Liu, MH Lee, WS Kuo, BC Hsu
IEEE Electron Device Letters 21 (6), 307-309, 2000
86 2000 