Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2 /SnSe2 Diode with Large Negative Responsivity S Ghosh, A Varghese, H Jawa, Y Yin, NV Medhekar, S Lodha
ACS nano 16 (3), 4578-4587, 2022
43 2022 Wavelength‐Controlled Photocurrent Polarity Switching in BP‐MoS2 Heterostructure H Jawa, A Varghese, S Ghosh, S Sahoo, Y Yin, NV Medhekar, S Lodha
Advanced Functional Materials 32 (25), 2112696, 2022
40 2022 All-Electrical High-Sensitivity, Low-Power Dual-Mode Gas Sensing and Recovery with a WSe2 /MoS2 pn Heterodiode S Dhara, H Jawa, S Ghosh, A Varghese, D Karmakar, S Lodha
ACS Applied Materials & Interfaces 13 (26), 30785-30796, 2021
35 2021 Enhanced stability and performance of few-layer black phosphorus transistors by electron beam irradiation N Goyal, N Kaushik, H Jawa, S Lodha
Nanoscale 10 (24), 11616-11623, 2018
31 2018 Accurate Threshold Voltage Reliability Evaluation of Thin Al2 O3 Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses N Goyal, N Parihar, H Jawa, S Mahapatra, S Lodha
ACS applied materials & interfaces 11 (26), 23673-23680, 2019
14 2019 Enhanced thermally aided memory performance using few-layer ReS2 transistors N Goyal, D Mackenzie, V Panchal, H Jawa, O Kazakova, DH Petersen, ...
Applied Physics Letters 116 (5), 2020
12 2020 Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS2 Field-Effect Transistors H Jawa, A Varghese, S Lodha
ACS Applied Materials & Interfaces 13 (7), 9186-9194, 2021
5 * 2021 Enhanced photoresponse of a dielectric-free suspended WSe2–ReS2 heterostructure photodetector H Jawa, N Khandare, A Varghese, S Sahoo, S Lodha
Applied Physics Letters 122 (12), 2023
2 2023 Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction S Dhara, H Jawa, S Ghosh, A Varghese, S Lodha
arXiv preprint arXiv:2009.11350, 2020
1 2020 Thermally Aided Nonvolatile Memory Using $\pmb {\mathrm {ReS} _ {2}} $ Transistors N Goyal, DMA Mackenzie, H Jawa, DH Petersen, S Lodha
2018 76th Device Research Conference (DRC), 1-2, 2018
1 2018 Interface trap states induced underestimation of Schottky barrier height in Metal-MX2 Junctions H Jawa, D Verreck, Z Sun, S Sutar, CJL Rosa, GS Kar, J Appenzeller
2025 Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS H Jawa, S Ghosh, A Varghese, S Sahoo, S Lodha
arXiv preprint arXiv:2111.00766, 2021
2021 All-Electrical High-Sensitivity, Low-Power Dual-Mode Gas Sensing and Recovery with a WSe₂/MoS₂ pn Heterodiode S Dhara, H Jawa, S Ghosh, A Varghese, D Karmakar, S Lodha
2021 A new approach to RF small-signal modeling of MOSFETs H Jawa, AK Dutta
Semiconductor Science and Technology 34 (11), 115024, 2019
2019 Effect of electron beam irradiation on black phosphorus field effect transistor performance N Goyal, N Kaushik, H Jawa, S Lodha
2017 75th Annual Device Research Conference (DRC), 1-3, 2017
2017 Novel compressors in the sub-threshold regime H Jawa, K Gupta
2013 INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING AND COMMUNICATION (ICSC …, 2013
2013 Supporting Information Enhanced Stability and Performance of Few-Layer Black Phosphorus Transistors by Electron Beam Irradiation N Goyal, N Kaushik, H Jawa, S Lodha
Saurabh LodhaP. K. Kelkar Chair Professor, Electrical Engineering, IIT BombayEmail verificata su ee.iitb.ac.in
