High carrier lifetimes in epitaxial germanium–tin/Al (In) As heterostructures with variable tin compositions MK Hudait, SW Johnston, MB Clavel, S Bhattacharya, S Karthikeyan, ...
Journal of Materials Chemistry C 10 (29), 10530-10540, 2022
12 2022 Monolithically Cointegrated Tensile Strained Germanium and Inx Ga1-x As FinFETs for Tunable CMOS Logic R Joshi, S Karthikeyan, MK Hudait
IEEE Transactions on Electron Devices 69 (8), 4175-4182, 2022
11 2022 Germanium Nanosheet-FETs Scaled to Subnanometer Node Utilizing Monolithically Integrated Lattice Matched Ge/AlAs and Strained Ge/InGaAs R Joshi, S Karthikeyan, MK Hudait
IEEE Transactions on Electron Devices 70 (3), 899-907, 2023
8 2023 Design Considerations and Quantum Confinement Effect in Monolithic ε-Ge/Inx Ga1-x As Nanoscale FinFETs Down to N5 Node R Joshi, S Karthikeyan, MK Hudait
IEEE Transactions on Electron Devices 69 (12), 6616-6623, 2022
7 2022 Monolithically Integrated x Ga1-x As Quantum Well Laser Design: Experimental and Theoretical Investigation R Joshi, S Johnston, S Karthikeyan, LF Lester, MK Hudait
IEEE Journal of Selected Topics in Quantum Electronics, 2023
5 2023 Carrier Recombination Dynamics of Surface-Passivated Epitaxial (100)Ge, (110)Ge, and (111)Ge Layers by Atomic Layer Deposited Al2 O3 MK Hudait, SW Johnston, MR Das, S Karthikeyan, PP Sahu, J Das, ...
ACS Applied Electronic Materials 5 (6), 3350-3361, 2023
4 2023 Lattice matched GeSn/InAlAs heterostructure: role of Sn in energy band alignment, atomic layer diffusion and photoluminescence S Karthikeyan, R Joshi, J Zhao, RJ Bodnar, BA Magill, Y Pleimling, ...
Journal of Materials Chemistry C 11 (28), 9472-9485, 2023
3 2023 GeSn-on-GaAs with photoconductive carrier lifetime> 400 ns: role of substrate orientation and atomistic simulation S Karthikeyan, SW Johnston, D Gayakwad, S Mahapatra, RJ Bodnar, ...
Nanoscale 16 (14), 7225-7236, 2024
1 2024 Germanium and GeSn based Quantum Well Lasers and Nanoscale Multi-gate FETs RS Joshi
Virginia Tech, 2025
2025 Lattice Matched Germanium-on-AlAs Nanosheet-FETs for More-Moore CMOS A Alam, A Trapani, R Schuette, E Levi, N Mohamed, R Deng, R Joshi, ...
IEEE Transactions on Electron Devices, 2024
2024 Lattice Matched Tunable Wavelength GeSn Quantum Well Laser Architecture: Theoretical Investigation R Joshi, LF Lester, MK Hudait
IEEE Journal of Selected Topics in Quantum Electronics, 2024
2024 Adaptive Design of Tensile Strained Ge-on-InGaAs QW Laser for MIR Applications R Rainhart, P Bavishi, B Westcott, Z He, R Joshi, MK Hudait
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024 Substrate Orientation Mediated Epitaxial GeSn Optoelectronic Materials MK Hudait, S Karthikeyan, S Johnston, R Joshi, D Priya, A Laha, ...
Conference presentation (6th Tri-Service GeSn Conference), 2023
2023 A Novel Tensile Strained Ge/InGaAs Quantum Well Laser for MIR Applications R Joshi
SSDM, Japan 2023, 0
Prof. Mantu HudaitAssoc. Prof. of ECE, Virginia Tech; Past: Intel Corporation, Ohio State U, IISc-Bangalore, IIT-KGPEmail verificata su vt.edu
