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G. Vinuesa
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Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media
T Kahro, A Tarre, T Kaambre, HM Piirsoo, J Kozlova, P Ritslaid, A Kasikov, ...
ACS Applied Nano Materials 4 (5), 5152-5163, 2021
182021
An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
D Maldonado, C Aguilera-Pedregosa, G Vinuesa, H García, S Dueñas, ...
Chaos, Solitons & Fractals 160, 112247, 2022
152022
Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices
H García, J Boo, G Vinuesa, Ó G. Ossorio, B Sahelices, S Dueñas, ...
Electronics 10 (22), 2816, 2021
142021
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
H García, G Vinuesa, OG Ossorio, B Sahelices, H Castan, S Duenas, ...
Solid-State Electronics 183, 108113, 2021
102021
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
G Vinuesa, OG Ossorio, H García, B Sahelices, H Castán, S Dueñas, ...
Solid-State Electronics 183, 108085, 2021
92021
Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
G Vinuesa, H García, MB González, K Kalam, M Zabala, A Tarre, K Kukli, ...
Electronics 11 (3), 479, 2022
82022
Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
H García, G Vinuesa, E García-Ochoa, FL Aguirre, MB González, ...
Journal of Physics D: Applied Physics 56 (36), 365108, 2023
72023
Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition
K Kalam, M Otsus, J Kozlova, A Tarre, A Kasikov, R Rammula, J Link, ...
Nanomaterials 12 (15), 2593, 2022
72022
Structural properties, magnetism and reactivity of Ni13-xFex nanoalloys
G Vinuesa, RH Aguilera-del-Toro, A Vega
Journal of Magnetism and Magnetic Materials 524, 167636, 2021
72021
Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
F Jiménez-Molinos, G Vinuesa, H García, A Tarre, A Tamm, K Kalam, ...
Journal of Applied Physics 132 (19), 2022
62022
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
OG Ossorio, G Vinuesa, H García, B Sahelices, S Dueñas, H Castán, ...
Solid-State Electronics 186, 108114, 2021
62021
Single and complex devices on three topological configurations of HfO2 based RRAM
ÓG Ossorio, S Poblador, G Vinuesa, S Dueñas, H Castán, ...
2020 IEEE Latin America Electron Devices Conference (LAEDC), 1-4, 2020
52020
Impact of the temperature on the conductive filament morphology in HfO2-based RRAM
G Vinuesa, H García, S Poblador, MB González, F Campabadal, ...
Materials Letters 357, 135699, 2024
42024
Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition
K Kukli, L Aarik, G Vinuesa, S Dueñas, H Castán, H García, A Kasikov, ...
Materials 15 (3), 877, 2022
42022
Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese (III) acetylacetonate and ozone
K Kalam, R Rammula, P Ritslaid, T Käämbre, J Link, R Stern, G Vinuesa, ...
Nanotechnology 32 (33), 335703, 2021
42021
Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications
OG Ossorio, G Vinuesa, G H., B Sahelices, D S., H Castán, E Pérez, ...
ECS Journal of Solid State Science and Technology 10 (8), 083002, 2021
42021
Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films
S Dueñas, H Castán, ÓG Ossorio, G Vinuesa, H García, K Kukli, ...
ECS Transactions 97 (1), 3, 2020
42020
A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
D Maldonado, G Vinuesa, S Aldana, FL Aguirre, A Cantudo, H García, ...
Materials Science in Semiconductor Processing 169, 107878, 2024
32024
Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states
F Jiménez-Molinos, G Vinuesa, H García, S Dueñas, H Castán, ...
Materials Science in Semiconductor Processing 179, 108480, 2024
22024
On the Asymmetry of Resistive Switching Transitions
G Vinuesa, H García, E Pérez, C Wenger, I Íñiguez-de-la-Torre, ...
Electronics 13 (13), 2639, 2024
22024
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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