Strain-Engineered Oxygen Vacancies in CaMnO3 Thin Films RU Chandrasena, W Yang, Q Lei, MU Delgado-Jaime, KD Wijesekara, ...
Nano letters 17 (2), 794-799, 2017
116 2017 Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films M Golalikhani, Q Lei, RU Chandrasena, L Kasaei, H Park, J Bai, P Orgiani, ...
Nature communications 9 (1), 2206, 2018
95 2018 Evolution of the charge density wave state in Cu TiSe M Iavarone, R Di Capua, X Zhang, M Golalikhani, SA Moore, ...
Physical Review B—Condensed Matter and Materials Physics 85 (15), 155103, 2012
60 2012 Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy Q Lei, M Golalikhani, BA Davidson, G Liu, DG Schlom, Q Qiao, Y Zhu, ...
npj Quantum Materials 2 (1), 10, 2017
43 2017 Stoichiometry of LaAlO3 films grown on SrTiO3 by pulsed laser deposition M Golalikhani, QY Lei, G Chen, JE Spanier, H Ghassemi, CL Johnson, ...
Journal of applied physics 114 (2), 2013
35 2013 Structural and transport properties of epitaxial Ba (Fe1− xCox) 2As2 thin films on various substrates QY Lei, M Golalikhani, DY Yang, WK Withanage, A Rafti, J Qiu, M Hambe, ...
Superconductor Science and Technology 27 (11), 115010, 2014
22 2014 Atomic layer deposition of CeO2 using a heteroleptic cyclopentadienyl-amidinate precursor M Golalikhani, T James, P Van Buskirk, W Noh, J Lee, Z Wang, JF Roeder
Journal of Vacuum Science & Technology A 36 (5), 2018
18 2018 Group IVA oxide surface modification of LSCF cathode powders by atomic layer deposition JF Roeder, M Golalikhani, AF Zeberoff, PC Van Buskirk, A Torabi, ...
ECS Transactions 78 (1), 935, 2017
11 2017 Spectroscopic Evidence of a Dimensionality-Induced Metal-to-Insulator Transition in the Ruddlesden–Popper Lan +1 Nin O3n +1 Series P Di Pietro, M Golalikhani, K Wijesekara, SK Chaluvadi, P Orgiani, X Xi, ...
ACS Applied Materials & Interfaces 13 (5), 6813-6819, 2021
7 2021 Narrow growth window for stoichiometric, layer-by-layer growth of LaAlO3 thin films using pulsed laser deposition M Golalikhani, QY Lei, MA Wolak, BA Davidson, XX Xi
Journal of Crystal Growth 443, 50-53, 2016
7 2016 Neutron Measurements In Sahand Plasma Focus S SOBHANIAN, MA Mohammadi, M GOLALIKHANI, M MOSLEHI-FARD, ...
Publications de l'Observatoire Astronomique de Beograd 89, 359-361, 2010
2 2010 Antimicrobial invasive surgical devices and systems PC Van Buskirk, M Golalikhani, JF Roeder
US Patent App. 16/278,092, 2020
1 2020 INVESTIGATION OF RADIATION EXPOSURE IN SAHAND PLASMA FOCUS LABORATORY MA TAFRESHI, M Golalikhani, S Sobhanian, M Jafarizadeh
JOURNAL OF PHYSICS MOLECULAR & ATOMIC 1 (2), 25-31, 2010
1 2010 Photocatalytic surface systems PC Van Buskirk, M Golalikhani, MA Petruska, JF Roeder
US Patent 11,052,385, 2021
2021 Electrochemical Performance and Stability of (La0.6 Sr0.4 )0.95 Co0.2 Fe0.8 O3-δ Cathode Powders Modified by Atomic Layer Deposition A Torabi, TC Geary, J Barton, C Willman, H Ghezel-Ayagh, JF Roeder, ...
Electrochemical Society Meeting Abstracts sofc2017, 161-161, 2017
2017 A new method for in situ calibration of cation stoichiometry during perovskite growth by RHEED (Reflection High-Energy Electron Diffraction) K Wijesekara, Q Lei, M Golalikhani, B Davidson, X Xi
APS March Meeting Abstracts 2017, T1. 174, 2017
2017 Structure and electronic properties of atomically-layered ultrathin nickelate films M Golalikhani
Temple University, 2015
2015 Electronic structure and metal-insulator transition in LaNiO ultrathin films grown on LaAlO substrates from separate oxide targets using laser MBE M Golalikhani, Q Lei, D Yang, L Kasaei, P Orgiani, D Arena, A Gray, X Xi
Bulletin of the American Physical Society 59, 2014
2014 Atomic layer-by-layer growth of oxide thin films by laser MBE Q Lei, G Liu, M Golalikhani, K Chen, S Shi, F Huang, A Farrar, D Tenne, ...
APS March Meeting Abstracts 2014, M49. 001, 2014
2014 Strain and strain relaxation analysis of superconducting Ba(Fe0.92 Co0.08 )2 As2 films on various substrates A Rafti, QY Lei, M Golalikhani, WK Withanage, J Qiu, M Hambe, ...
APS March Meeting Abstracts 2014, G52. 003, 2014
2014