Andreas Waag

Citata da

	Tutte	Dal 2020
Citazioni	23151	4773
Indice H	67	31
i10-index	404	119

1200

600

300

900

199219931994199519961997199819992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024202564 102 119 216 236 194 307 370 437 466 558 598 725 635 785 841 845 850 902 830 1057 1059 1035 1014 960 958 933 1166 1045 1019 954 819 810 125

Accesso pubblico

Visualizza tutto

129 articoli

85 articoli

Disponibili

Non disponibili

In base ai mandati di finanziamento

Coautori

Dmitri R. YakovlevTU Dortmund University, GermanyEmail verificata su tu-dortmund.de
Andrey BakinProf. Dr., Technische Universität BraunschweigEmail verificata su tu-bs.de
Hutomo Suryo WasistoInfineon Technologies AGEmail verificata su infineon.com
Erwin PeinerProfessor of Semiconductor Technology, TU Braunschweig University of TechnologyEmail verificata su tu-bs.de
Dr. Günter ReuscherVDI Technologiezentrum GmbHEmail verificata su vdi.de
Joan Daniel PradesTU BraunschweigEmail verificata su tu-braunschweig.de
Laurens W MolenkampPhysics Institute (EP3) and Institute for Topological Insulators, Würzburg UniversityEmail verificata su physik.uni-wuerzburg.de
Abdelhamid El-ShaerKafrelsheikh University, Faculty of Science, Physics Department.Email verificata su sci.kfs.edu.eg
Andrej StranzResearcher, Fraunhofer IZM BerlinEmail verificata su izm.fraunhofer.de
KochereshkoIoffe InstituteEmail verificata su mail.ioffe.ru
Sergey IvanovDirector, Ioffe InstituteEmail verificata su beam.ioffe.ru
Tatiana V. ShubinaChief researcher, Ioffe Institute of RASEmail verificata su beam.ioffe.ru
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinEmail verificata su tu-berlin.de
Ernst Göbelemeritus president of PTBEmail verificata su ptb.de
Ralf HellmannProfessor der Physik, Lasertechnik, Photonik, University Applied Science AschaffenburgEmail verificata su th-ab.de
Tunga SalthammerFraunhofer WKIEmail verificata su wki.fraunhofer.de
Olga Casals GuillénMIND - Department of Electronics and Biomedical EngineeringEmail verificata su ub.edu
Georg SchmidtProfessor der Physik, Universität HalleEmail verificata su physik.uni-halle.de
Tobias VossTechnische Universität BraunschweigEmail verificata su tu-braunschweig.de
Alexei V. PlatonovФТИ им. А.Ф.ИоффеEmail verificata su mail.ioffe.ru

Segui

Andreas Waag

Technische Universität Braunschweig

Email verificata su tu-braunschweig.de - Home page

Semiconductor Technology Quantum Technology Optoelectronics Gallium Nitride Photonic Integration


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Injection and detection of a spin-polarized current in a light-emitting diode R Fiederling, M Keim, G Reuscher, W Ossau, G Schmidt, A Waag, ... Nature 402 (6763), 787-790, 1999	2546	1999
Zinc oxide: from fundamental properties towards novel applications CF Klingshirn, A Waag, A Hoffmann, J Geurts Springer Science & Business Media, 2010	781	2010
Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers M Willander, O Nur, QX Zhao, LL Yang, M Lorenz, BQ Cao, JZ Pérez, ... Nanotechnology 20 (33), 332001, 2009	774	2009
GaN based nanorods for solid state lighting S Li, A Waag Journal of Applied Physics 111 (7), 2012	613	2012
ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region T Gruber, C Kirchner, R Kling, F Reuss, A Waag Applied physics letters 84 (26), 5359-5361, 2004	356	2004
Donor–acceptor pair transitions in ZnO substrate material K Thonke, T Gruber, N Teofilov, R Schönfelder, A Waag, R Sauer Physica B: Condensed Matter 308, 945-948, 2001	355	2001
Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs HS Wasisto, JD Prades, J Gülink, A Waag Applied Physics Reviews 6 (4), 2019	271	2019
Molecular‐beam epitaxy of beryllium‐chalcogenide‐based thin films and quantum‐well structures A Waag, F Fischer, HJ Lugauer, T Litz, J Laubender, U Lunz, U Zehnder, ... Journal of Applied Physics 80 (2), 792-796, 1996	264	1996
Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy T Gruber, C Kirchner, R Kling, F Reuss, A Waag, F Bertram, D Forster, ... Applied physics letters 83 (16), 3290-3292, 2003	225	2003
Electron and hole g factors measured by spin-flip Raman scattering in CdTe/Cd 1− x Mg x Te single quantum wells AA Sirenko, T Ruf, M Cardona, DR Yakovlev, W Ossau, A Waag, ... Physical Review B 56 (4), 2114, 1997	212	1997
Epitaxial growth and optical transitions of cubic GaN films D Schikora, M Hankeln, DJ As, K Lischka, T Litz, A Waag, T Buhrow, ... Physical Review B 54 (12), R8381, 1996	189	1996
Localized exciton magnetic polarons in Cd 1− x Mn x Te G Mackh, W Ossau, DR Yakovlev, A Waag, G Landwehr, R Hellmann, ... Physical Review B 49 (15), 10248, 1994	186	1994
Airborne engineered nanoparticle mass sensor based on a silicon resonant cantilever HS Wasisto, S Merzsch, A Waag, E Uhde, T Salthammer, E Peiner Sensors and Actuators B: Chemical 180, 77-89, 2013	185	2013
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ... Nanotechnology 21 (30), 305201, 2010	185	2010
Growth of MgTe and Cd1− xMgxTe thin films by molecular beam epitaxy A Waag, H Heinke, S Scholl, CR Becker, G Landwehr Journal of crystal growth 131 (3-4), 607-611, 1993	174	1993
The nanorod approach: GaN NanoLEDs for solid state lighting A Waag, X Wang, S Fündling, J Ledig, M Erenburg, R Neumann, ... physica status solidi c 8 (7‐8), 2296-2301, 2011	172	2011
Laser diodes based on beryllium-chalcogenides A Waag, F Fischer, K Schüll, T Baron, HJ Lugauer, T Litz, U Zehnder, ... Applied physics letters 70 (3), 280-282, 1997	170	1997
Kinetic exchange between the conduction band electrons and magnetic ions in quantum-confined structures IA Merkulov, DR Yakovlev, A Keller, W Ossau, J Geurts, A Waag, ... Physical Review Letters 83 (7), 1431, 1999	159	1999
Optical investigations on the annealing behavior of gallium-and nitrogen-implanted ZnO F Reuss, C Kirchner, T Gruber, R Kling, S Maschek, W Limmer, A Waag, ... Journal of Applied Physics 95 (7), 3385-3390, 2004	158	2004
Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires T Voss, C Bekeny, L Wischmeier, H Gafsi, S Börner, W Schade, AC Mofor, ... Applied Physics Letters 89 (18), 2006	157	2006

Il sistema al momento non può eseguire l'operazione. Riprova più tardi.

Articoli 1–20

Citazioni per anno

Citazioni duplicate

Citazioni unite

Aggiungi coautoriCoautori

Segui

Citata da

Coautori