| Optimized laser thermal annealing on germanium for high dopant activation and low leakage current M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ... IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014 | 59 | 2014 |
| Defect evolution and dopant activation in laser annealed Si and Ge F Cristiano, M Shayesteh, R Duffy, K Huet, F Mazzamuto, Y Qiu, M Quillec, ... Materials Science in Semiconductor Processing 42, 188-195, 2016 | 53 | 2016 |
| Organo-arsenic molecular layers on silicon for high-density doping J O’Connell, GA Verni, A Gangnaik, M Shayesteh, B Long, YM Georgiev, ... ACS applied materials & interfaces 7 (28), 15514-15521, 2015 | 51 | 2015 |
| Impact ionization induced dynamic floating body effect in junctionless transistors R Yu, AN Nazarov, VS Lysenko, S Das, I Ferain, P Razavi, M Shayesteh, ... Solid-state electronics 90, 28-33, 2013 | 38 | 2013 |
| Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates R Yu, S Das, I Ferain, P Razavi, M Shayesteh, A Kranti, R Duffy, ... IEEE transactions on electron devices 59 (9), 2308-2313, 2012 | 36 | 2012 |
| The curious case of thin-body Ge crystallization R Duffy, M Shayesteh, B McCarthy, A Blake, M White, J Scully, R Yu, ... Applied Physics Letters 99 (13), 2011 | 32 | 2011 |
| Atomically flat low-resistive germanide contacts formed by laser thermal anneal M Shayesteh, K Huet, I Toqué-Tresonne, R Negru, CLM Daunt, N Kelly, ... IEEE transactions on electron devices 60 (7), 2178-2185, 2013 | 30 | 2013 |
| NiGe contacts and junction architectures for P and As doped germanium devices M Shayesteh, CLLM Daunt, D O'Connell, V Djara, M White, B Long, ... IEEE transactions on electron devices 58 (11), 3801-3807, 2011 | 29 | 2011 |
| Molecular Layer Doping: Non-destructive doping of silicon and germanium B Long, GA Verni, J O'Connell, J Holmes, M Shayesteh, D O'Connell, ... 2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014 | 27 | 2014 |
| The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization R Duffy, M Shayesteh, M White, J Kearney, AM Kelleher Applied Physics Letters 96 (23), 2010 | 27 | 2010 |
| Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion R Duffy, M Shayesteh, K Thomas, E Pelucchi, R Yu, A Gangnaik, ... Journal of Materials Chemistry C 2 (43), 9248-9257, 2014 | 26 | 2014 |
| Junctionless nanowire transistor fabricated with high mobility Ge channel R Yu, YM Georgiev, S Das, RG Hobbs, IM Povey, N Petkov, M Shayesteh, ... physica status solidi (RRL)–Rapid Research Letters 8 (1), 65-68, 2014 | 24 | 2014 |
| Doping top-down e-beam fabricated germanium nanowires using molecular monolayers B Long, GA Verni, J O’Connell, M Shayesteh, A Gangnaik, YM Georgiev, ... Materials Science in Semiconductor Processing 62, 196-200, 2017 | 20 | 2017 |
| Germanium doping challenges R Duffy, M Shayesteh, I Kazadojev, R Yu 2013 13th International Workshop on Junction Technology (IWJT), 16-21, 2013 | 20 | 2013 |
| Problems of n-type doped regions in germanium, their solutions, and how to beat the ITRS roadmap R Duffy, M Shayesteh, M White, J Kearney, AM Kelleher ECS Transactions 35 (2), 185, 2011 | 20 | 2011 |
| Germanium doping, contacts, and thin-body structures R Duffy, M Shayesteh ECS Transactions 45 (4), 189, 2012 | 12 | 2012 |
| Mode suppression in injection locked multi-mode and single-mode lasers for optical demultiplexing K Shortiss, M Shayesteh, W Cotter, AH Perrott, M Dernaika, FH Peters Photonics 6 (1), 27, 2019 | 11 | 2019 |
| FinFET doping; material science, metrology, and process modeling studies for optimized device performance R Duffy, M Shayesteh American Institute of Physics Conference Series 1321 (1), 17-22, 2011 | 11 | 2011 |
| Modelling the effect of slave laser gain and frequency comb spacing on the selective amplification of injection locked semiconductor lasers KJ Shortiss, M Shayesteh, FH Peters Optical and Quantum Electronics 50, 1-9, 2018 | 10 | 2018 |
| RF plasma treatment of shallow ion-implanted layers of germanium PN Okholin, VI Glotov, AN Nazarov, VO Yuchymchuk, VP Kladko, ... Materials Science in Semiconductor Processing 42, 204-209, 2016 | 7 | 2016 |