| CNTFET modeling and reconfigurable logic-circuit design I O'Connor, J Liu, F Gaffiot, F Prégaldiny, C Lallement, C Maneux, ... IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2365-2379, 2007 | 225 | 2007 |
| Robust surface-potential-based compact model for GaN HEMT IC design S Khandelwal, C Yadav, S Agnihotri, YS Chauhan, A Curutchet, T Zimmer, ... IEEE Transactions on Electron Devices 60 (10), 3216-3222, 2013 | 140 | 2013 |
| Scalable electrical compact modeling for graphene FET transistors S Fregonese, M Magallo, C Maneux, H Happy, T Zimmer IEEE Transactions on Nanotechnology 12 (4), 539-546, 2013 | 127 | 2013 |
| Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ... Proceedings of the IEEE 105 (6), 1035-1050, 2017 | 121 | 2017 |
| Computationally efficient physics-based compact CNTFET model for circuit design S Frégonèse, HC d'Honincthun, J Goguet, C Maneux, T Zimmer, ... IEEE Transactions on Electron Devices 55 (6), 1317-1327, 2008 | 117 | 2008 |
| Pedagogical evaluation of remote laboratories in eMerge project D Lang, C Mengelkamp, RS Jaeger, D Geoffroy, M Billaud, T Zimmer European Journal of Engineering Education 32 (1), 57-72, 2007 | 88 | 2007 |
| SiGe HBTs and BiCMOS technology for present and future millimeter-wave systems T Zimmer, J Böck, F Buchali, P Chevalier, M Collisi, B Debaillie, M Deng, ... IEEE Journal of Microwaves 1 (1), 288-298, 2021 | 78 | 2021 |
| Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications M Najari, S Frégonèse, C Maneux, H Mnif, N Masmoudi, T Zimmer IEEE transactions on electron devices 58 (1), 195-205, 2010 | 78 | 2010 |
| Pilot study of freshly excised breast tissue response in the 300–600 GHz range Q Cassar, A Al-Ibadi, L Mavarani, P Hillger, J Grzyb, G MacGrogan, ... Biomedical optics express 9 (7), 2930-2942, 2018 | 75 | 2018 |
| Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz S Fregonese, M Deng, M De Matos, C Yadav, S Joly, B Plano, C Raya, ... IEEE Transactions on Terahertz Science and Technology 9 (1), 89-97, 2018 | 55 | 2018 |
| A computationally efficient physics-based compact bipolar transistor model for circuit design-Part I: Model formulation M Schroter, S Lehmann, S Frégonèse, T Zimmer IEEE transactions on electron devices 53 (2), 279-286, 2006 | 51 | 2006 |
| Electrical compact modelling of graphene transistors S Fregonese, N Meng, HN Nguyen, C Majek, C Maneux, H Happy, ... Solid-State Electronics 73, 27-31, 2012 | 49 | 2012 |
| On-wafer characterization of silicon transistors up to 500 GHz and analysis of measurement discontinuities between the frequency bands S Fregonese, M Deng, M Potereau, C Ayela, K Aufinger, T Zimmer IEEE Transactions on Microwave Theory and Techniques 66 (7), 3332-3341, 2018 | 48 | 2018 |
| Analysis of CNTFET physical compact model C Maneux, J Goguet, S Fregonese, T Zimmer, HC d'Honincthun, ... International Conference on Design and Test of Integrated Systems in …, 2006 | 45 | 2006 |
| A 128-pixel system-on-a-chip for real-time super-resolution terahertz near-field imaging P Hillger, R Jain, J Grzyb, W Förster, B Heinemann, G MacGrogan, ... IEEE Journal of Solid-State Circuits 53 (12), 3599-3612, 2018 | 42 | 2018 |
| A scalable electrothermal model for transient self-heating effects in trench-isolated SiGe HBTs AK Sahoo, S Frégonèse, M Weis, N Malbert, T Zimmer IEEE Transactions on Electron Devices 59 (10), 2619-2625, 2012 | 42 | 2012 |
| HICUM parameter extraction methodology for a single transistor geometry D Berger, D Cell, M Schroter, M Malorny, T Zimmer, B Ardouin Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 116-119, 2002 | 42 | 2002 |
| Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation T Zimmer, DO Bodi, JM Dumas, N Labat, A Touboul, Y Danto Solid-state electronics 35 (10), 1543-1548, 1992 | 40 | 1992 |
| A compact model for dual-gate one-dimensional FET: Application to carbon-nanotube FETs S Frégonèse, C Maneux, T Zimmer IEEE transactions on electron devices 58 (1), 206-215, 2010 | 37 | 2010 |
| Implementation of tunneling phenomena in a CNTFET compact model S Frégonèse, C Maneux, T Zimmer IEEE Transactions on Electron Devices 56 (10), 2224-2231, 2009 | 37 | 2009 |
sebastien fregoneseCR CNRS, Université de BordeauxEmail verificata su ims-bordeaux.fr