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Sergey Tarelkin
Sergey Tarelkin
TISNCM, VNIIOFI
Email verificata su tisnum.ru
Titolo
Citata da
Citata da
Anno
Development of nuclear microbattery prototype based on Schottky barrier diamond diodes
V Bormashov, S Troschiev, A Volkov, S Tarelkin, E Korostylev, ...
physica status solidi (a) 212 (11), 2539-2547, 2015
1042015
High power density nuclear battery prototype based on diamond Schottky diodes
VS Bormashov, SY Troschiev, SA Tarelkin, AP Volkov, DV Teteruk, ...
Diamond and related materials 84, 41-47, 2018
1032018
Electrical properties of the high quality boron-doped synthetic single-crystal diamonds grown by the temperature gradient method
VS Bormashov, SA Tarelkin, SG Buga, MS Kuznetsov, SA Terentiev, ...
Diamond and related materials 35, 19-23, 2013
1012013
Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3
AY Polyakov, NB Smirnov, IV Shchemerov, D Gogova, SA Tarelkin, ...
Journal of Applied Physics 123 (11), 2018
972018
Power high-voltage and fast response Schottky barrier diamond diodes
VD Blank, VS Bormashov, SA Tarelkin, SG Buga, MS Kuznetsov, ...
Diamond and Related Materials 57, 32-36, 2015
912015
Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique
VS Bormashov, SA Terentiev, SG Buga, SA Tarelkin, AP Volkov, ...
Diamond and Related Materials 75, 78-84, 2017
592017
Power diamond vertical Schottky barrier diode with 10 A forward current
S Tarelkin, V Bormashov, S Buga, A Volkov, D Teteruk, N Kornilov, ...
Physica status solidi (a) 212 (11), 2621-2627, 2015
582015
Ultrawide-bandgap pn heterojunction of diamond/β-Ga2O3 for a solar-blind photodiode
H Kim, S Tarelkin, A Polyakov, S Troschiev, S Nosukhin, M Kuznetsov, ...
ECS Journal of Solid State Science and Technology 9 (4), 045004, 2020
542020
Spatially controlled fabrication of single NV centers in IIa HPHT diamond
SD Trofimov, SA Tarelkin, SV Bolshedvorskii, VS Bormashov, ...
Optical Materials Express 10 (1), 198-207, 2019
502019
Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy
IH Lee, AY Polyakov, EB Yakimov, NB Smirnov, IV Shchemerov, ...
Applied Physics Letters 110 (11), 2017
372017
Comparative study of different metals for Schottky barrier diamond betavoltaic power converter by EBIC technique
S Tarelkin, V Bormashov, E Korostylev, S Troschiev, D Teteruk, ...
physica status solidi (a) 213 (9), 2492-2497, 2016
342016
Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN
AY Polyakov, NB Smirnov, EB Yakimov, SA Tarelkin, AV Turutin, ...
Journal of Alloys and Compounds 686, 1044-1052, 2016
332016
Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN
IH Lee, AY Polyakov, NB Smirnov, EB Yakimov, SA Tarelkin, AV Turutin, ...
Journal of Applied Physics 119 (20), 2016
282016
Superconductivity in bulk polycrystalline metastable phases of Sb2Te3 and Bi2Te3 quenched after high-pressure–high-temperature treatment
SG Buga, VA Kulbachinskii, VG Kytin, GA Kytin, IA Kruglov, NA Lvova, ...
Chemical Physics Letters 631, 97-102, 2015
262015
Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs
IH Lee, AY Polyakov, SM Hwang, NM Shmidt, EI Shabunina, ...
Applied Physics Letters 111 (6), 2017
252017
Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates
AY Polyakov, VI Nikolaev, SA Tarelkin, AI Pechnikov, SI Stepanov, ...
Journal of Applied Physics 129 (18), 2021
242021
Diamond microstructuring by deep anisotropic reactive ion etching
AV Golovanov, VS Bormashov, NV Luparev, SA Tarelkin, SY Troschiev, ...
physica status solidi (a) 215 (22), 1800273, 2018
222018
Optimization of the coherence properties of diamond samples with an intermediate concentration of NV centers
OR Rubinas, VV Soshenko, SV Bolshedvorskii, AI Zeleneev, AS Galkin, ...
Results in Physics 21, 103845, 2021
212021
Thermal conductivity of synthetic boron-doped single-crystal HPHT diamond from 20 to 400 K
D Prikhodko, S Tarelkin, V Bormashov, A Golovanov, M Kuznetsov, ...
MRS communications 6 (2), 71-76, 2016
212016
Near-far IR photoconductivity damping in hyperdoped Si at low temperatures
S Kudryashov, K Boldyrev, A Nastulyavichus, D Prikhod’ko, S Tarelkin, ...
Optical Materials Express 11 (11), 3792-3800, 2021
152021
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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