Negative- NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ...
Physical review letters 109 (18), 187603, 2012
296 2012 Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation T Kimoto, K Danno, J Suda
physica status solidi (b) 245 (7), 1327-1336, 2008
154 2008 Ultrahigh-voltage SiC pin diodes with improved forward characteristics N Kaji, H Niwa, J Suda, T Kimoto
IEEE Transactions on Electron Devices 62 (2), 374-381, 2014
148 2014 Nearly ideal current–voltage characteristics of Schottky barrier diodes formed on hydride-vapor-phase-epitaxy-grown GaN free-standing substrates J Suda, K Yamaji, Y Hayashi, T Kimoto, K Shimoyama, H Namita, ...
Applied physics express 3 (10), 101003, 2010
145 2010 Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing H Sakurai, M Omori, S Yamada, Y Furukawa, H Suzuki, T Narita, ...
Applied Physics Letters 115 (14), 2019
144 2019 Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping G Feng, J Suda, T Kimoto
Applied Physics Letters 92 (22), 2008
139 2008 Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers A Koizumi, J Suda, T Kimoto
Journal of Applied Physics 106 (1), 2009
131 2009 21-kV SiC BJTs with space-modulated junction termination extension H Miyake, T Okuda, H Niwa, T Kimoto, J Suda
IEEE Electron Device Letters 33 (11), 1598-1600, 2012
130 2012 Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride H Kinoshita, S Otani, S Kamiyama, H Amano, I Akasaki, J Suda, ...
Japanese Journal of Applied Physics 40 (12A), L1280, 2001
129 2001 Space-modulated junction termination extension for ultrahigh-voltage pin diodes in 4H-SiC G Feng, J Suda, T Kimoto
IEEE transactions on electron devices 59 (2), 414-418, 2011
123 2011 The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515° C N Watanabe, T Kimoto, J Suda
Journal of Applied Physics 104 (10), 2008
119 2008 Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes T Hiyoshi, T Hori, J Suda, T Kimoto
IEEE Transactions on electron devices 55 (8), 1841-1846, 2008
115 2008 Interface Properties of 4H-SiC ( S Nakazawa, T Okuda, J Suda, T Nakamura, T Kimoto
IEEE Transactions on Electron Devices 62 (2), 309-315, 2014
110 2014 Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations M Horita, S Takashima, R Tanaka, H Matsuyama, K Ueno, M Edo, ...
Japanese Journal of Applied Physics 56 (3), 031001, 2017
109 2017 Design and fabrication of GaN pn junction diodes with negative beveled-mesa termination T Maeda, T Narita, H Ueda, M Kanechika, T Uesugi, T Kachi, T Kimoto, ...
IEEE Electron Device Letters 40 (6), 941-944, 2019
103 2019 Impact ionization coefficients in 4H-SiC toward ultrahigh-voltage power devices H Niwa, J Suda, T Kimoto
IEEE Transactions on Electron Devices 62 (10), 3326-3333, 2015
101 2015 Analytical model for reduction of deep levels in SiC by thermal oxidation K Kawahara, J Suda, T Kimoto
Journal of Applied Physics 111 (5), 2012
98 2012 Progress on and challenges of p-type formation for GaN power devices T Narita, H Yoshida, K Tomita, K Kataoka, H Sakurai, M Horita, ...
Journal of Applied Physics 128 (9), 2020
94 2020 Reduction in potential barrier height of AlGaN∕ GaN heterostructures by SiN passivation N Onojima, M Higashiwaki, J Suda, T Kimoto, T Mimura, T Matsui
Journal of applied physics 101 (4), 2007
94 2007 Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers T Kimoto, T Hiyoshi, T Hayashi, J Suda
Journal of Applied Physics 108 (8), 2010
88 2010 