Fundamentals of silicon carbide technology: growth, characterization, devices and applications T Kimoto, JA Cooper
John Wiley & Sons, 2014
1780 2014 Material science and device physics in SiC technology for high-voltage power devices T Kimoto
Japanese Journal of Applied Physics 54 (4), 040103, 2015
1135 2015 Step-controlled epitaxial growth of SiC: High quality homoepitaxy H Matsunami, T Kimoto
Materials Science and Engineering: R: Reports 20 (3), 125-166, 1997
787 1997 Deep defect centers in silicon carbide monitored with deep level transient spectroscopy T Dalibor, G Pensl, H Matsunami, T Kimoto, WJ Choyke, A Schöner, ...
physica status solidi (a) 162 (1), 199-225, 1997
537 1997 Power conversion with SiC devices at extremely high ambient temperatures T Funaki, JC Balda, J Junghans, AS Kashyap, HA Mantooth, F Barlow, ...
IEEE Transactions on Power electronics 22 (4), 1321-1329, 2007
413 2007 High performance of high-voltage 4H-SiC Schottky barrier diodes A Itoh, T Kimoto, H Matsunami
IEEE Electron Device Letters 16 (6), 280-282, 1995
313 1995 Negative- NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ...
Physical review letters 109 (18), 187603, 2012
296 2012 Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation T Hiyoshi, T Kimoto
Applied Physics Express 2 (4), 041101, 2009
283 2009 Defect engineering in SiC technology for high-voltage power devices T Kimoto, H Watanabe
Applied Physics Express 13 (12), 120101, 2020
274 2020 Performance limiting surface defects in SiC epitaxial pn junction diodes T Kimoto, N Miyamoto, H Matsunami
IEEE Transactions on Electron Devices 46 (3), 471-477, 1999
270 1999 High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~ 0) face H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara
IEEE Electron Device Letters 20 (12), 611-613, 1999
269 1999 Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation K Danno, D Nakamura, T Kimoto
Applied physics letters 90 (20), 2007
256 2007 Interface properties of metal–oxide–semiconductor structures on 4H-SiC {0001} and (1120) formed by N2O oxidation T Kimoto, Y Kanzaki, M Noborio, H Kawano, H Matsunami
Japanese journal of applied physics 44 (3R), 1213, 2005
247 2005 Growth mechanism of 6H‐SiC in step‐controlled epitaxy T Kimoto, H Nishino, WS Yoo, H Matsunami
Journal of applied physics 73 (2), 726-732, 1993
242 1993 Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC {0001} vicinal surfaces T Kimoto, H Matsunami
Journal of applied physics 75 (2), 850-859, 1994
231 1994 Step bunching mechanism in chemical vapor deposition of 6H–and 4H–SiC {0001} T Kimoto, A Itoh, H Matsunami, T Okano
Journal of applied physics 81 (8), 3494-3500, 1997
226 1997 Step‐controlled epitaxial growth of high‐quality SiC layers T Kimoto, A Itoh, H Matsunami
physica status solidi (b) 202 (1), 247-262, 1997
224 1997 Electronic behaviors of high-dose phosphorus-ion implanted 4H–SiC (0001) Y Negoro, K Katsumoto, T Kimoto, H Matsunami
Journal of Applied Physics 96 (1), 224-228, 2004
206 2004 Bulk and epitaxial growth of silicon carbide T Kimoto
Progress in Crystal Growth and Characterization of Materials 62 (2), 329-351, 2016
199 2016 Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination A Itoh, T Kimoto, H Matsunami
IEEE Electron Device Letters 17 (3), 139-141, 1996
196 1996 
Suda JunNagoya University / Kyoto UniversityEmail verificata su nuee.nagoya-u.ac.jp
