| Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation P Luo, C Liu, J Lin, X Duan, W Zhang, C Ma, Y Lv, X Zou, Y Liu, ... Nature Electronics 5 (12), 849-858, 2022 | 101 | 2022 |
| Polarization‐Resolved Broadband MoS2/Black Phosphorus/MoS2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio C Liu, X Zou, MC Wu, Y Wang, Y Lv, X Duan, S Zhang, X Liu, WW Wu, ... Advanced Functional Materials 31 (23), 2100781, 2021 | 41 | 2021 |
| Amorphous B-doped graphitic carbon nitride quantum dots with high photoluminescence quantum yield of near 90% and their sensitive detection of Fe2+/Cd2+ B Li, J Zhang, Z Luo, X Duan, WQ Huang, W Hu, GF Huang Sci. China Mater 64 (12), 3037-3050, 2021 | 27 | 2021 |
| Ultra‐Steep‐Slope High‐Gain MoS2 Transistors with Atomic Threshold‐Switching Gate J Lin, X Chen, X Duan, Z Yu, W Niu, M Zhang, C Liu, G Li, Y Liu, X Liu, ... Advanced Science 9 (8), 2104439, 2022 | 21 | 2022 |
| Schottky-Contacted WSe2 Hot-Electron Photodetectors with Fast Response and High Sensitivity M Zhang, X Liu, X Duan, S Zhang, C Liu, D Wan, G Li, Z Xia, Z Fan, L Liao ACS photonics 9 (1), 132-137, 2021 | 19 | 2021 |
| Electrically Dynamic Configurable WSe2 Transistor and the Applications in Photodetector T Bu, X Duan, C Liu, W Su, X Hong, R Hong, X Zhou, Y Liu, Z Fan, X Zou, ... Advanced Functional Materials 33 (48), 2305490, 2023 | 14 | 2023 |
| Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces Y Li, X Zhang, X Duan, W Niu, S Zhao, X He, H Huang, X Liu, X Zou, L Li, ... Advanced Electronic Materials 8 (10), 2200513, 2022 | 9 | 2022 |
| The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory X Zhang, X Duan, W Niu, X Liu, X Zou, H Huang, DH Mudiyanselage, ... IEEE Transactions on Electron Devices 69 (10), 5644-5648, 2022 | 9 | 2022 |
| MoS2 Homojunctions Transistors Enabled by Dimension Tailoring Strategy X Duan, W Niu, J Lin, C Liu, D Wan, M Zhang, G Li, X Liu, Y Liu, Z Fan, ... Advanced Electronic Materials 7 (11), 2100703, 2021 | 7 | 2021 |
| MoS2 Nanoribbon Transistor for Logic Electronics X Duan, Z Yang, J Lin, H Huang, G Li, D Wan, X Zou, J Bai, J Miao, L Liao, ... IEEE Transactions on Electron Devices 69 (6), 3433-3438, 2022 | 5 | 2022 |
| Tunable optoelectronic response in van der Waals heterojunction transistors for artificial visual recognition M Dang, X Duan, C Liu, S Zhang, X Hong, W Niu, P Luo, B Jiang, T Bu, ... Applied Physics Letters 124 (12), 2024 | 3 | 2024 |
| Total ionizing dose and single event effect response of 22 nm ultra-thin body and buried oxide fully depleted silicon-on-insulator technology Y Yin, H Ma, Q Zheng, J Chen, X Duan, P Zhang, X Zhou Microelectronics Reliability 152, 115296, 2024 | 2 | 2024 |
| High-Current Omega-Shaped Gated MoS₂ Transistors Z Yu, X Duan, S Zhang, J Lin, W Su, G Li, X Liu, L Liao IEEE Transactions on Electron Devices 69 (2), 816-819, 2022 | 2 | 2022 |
| Solution-Processed Quantum-Dots Light-Emitting Transistors With Equivalent Efficiency of Light-Emitting Diodes P He, L Lan, X Duan, X Liu, L Liao IEEE Transactions on Electron Devices 69 (2), 521-524, 2021 | 2 | 2021 |
| A non-volatile and radiation-hardened SRAM based on fourteen transistors and two perpendicular anisotropy magnetic tunnel junctions P Yang, K Li, Y Zhu, X Duan, Y Yin, J Chen, T Wang, X Zhou Microelectronics Reliability 166, 115603, 2025 | | 2025 |
| Total ionizing dose radiation effect of HfO2/TaOx-based resistive random-access memories X Duan, Y Qing, Y Wang, R Hong, J Chen, P Yang, Y Yin, X Zhou, X Liu, ... Microelectronics Reliability 165, 115590, 2025 | | 2025 |
| The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology J Chen, Y Yin, W Yang, T Wang, X Duan, Y Qiu, P Yang, L Zhang, X Zhou, ... Radiation Effects and Defects in Solids, 1-11, 2024 | | 2024 |
| 非晶态硼掺杂石墨相氮化碳量子点: 近90%高荧光 量子产率及高灵敏检测Fe2+/Cd2+ B Li, J Zhang, Z Luo, X Duan, WQ Huang, W Hu, A Pan, L Liao, L Jiang, ... Science China Materials 64, 3037-3050, 2021 | | 2021 |