| Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics A Varghese, D Saha, K Thakar, V Jindal, S Ghosh, NV Medhekar, ... Nano letters 20 (3), 1707-1717, 2020 | 205 | 2020 |
| Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction S Ghosh, A Varghese, K Thakar, S Dhara, S Lodha Nature communications 12 (1), 3336, 2021 | 97 | 2021 |
| Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity S Ghosh, A Varghese, H Jawa, Y Yin, NV Medhekar, S Lodha ACS nano 16 (3), 4578-4587, 2022 | 42 | 2022 |
| Wavelength‐Controlled Photocurrent Polarity Switching in BP‐MoS2 Heterostructure H Jawa, A Varghese, S Ghosh, S Sahoo, Y Yin, NV Medhekar, S Lodha Advanced Functional Materials 32 (25), 2112696, 2022 | 39 | 2022 |
| All-Electrical High-Sensitivity, Low-Power Dual-Mode Gas Sensing and Recovery with a WSe2/MoS2 pn Heterodiode S Dhara, H Jawa, S Ghosh, A Varghese, D Karmakar, S Lodha ACS Applied Materials & Interfaces 13 (26), 30785-30796, 2021 | 35 | 2021 |
| Low-Frequency Noise in Supported and Suspended MoS2Transistors N Kaushik, S Ghosh, S Lodha IEEE Transactions on Electron Devices 65 (10), 4135-4140, 2018 | 22 | 2018 |
| Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer D Biswas, J Biswas, S Ghosh, B Wood, S Lodha Applied Physics Letters 110 (5), 2017 | 21 | 2017 |
| Chemopreventive efficacy of selenomethionine and its role in the antioxidant defense system in 2-acetylaminofluorene-induced hepatocarcinogenesis in rats. B Mukherjee, S Ghosh, M Chatterjee Journal of experimental therapeutics & oncology 1 (4), 209-217, 1996 | 17 | 1996 |
| Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations S Kothari, C Joishi, S Ghosh, D Biswas, D Vaidya, S Ganguly, S Lodha Applied Physics Express 9 (7), 071302, 2016 | 13 | 2016 |
| WSe2/ReS2 vdW heterostructure for versatile optoelectronic applications A Varghese, D Joseph, S Ghosh, K Thakar, N Mcdhckar, S Lodha 2018 76th Device Research Conference (DRC), 1-2, 2018 | 7 | 2018 |
| Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al2O3 and GeOx ILs Using Ultrafast Charge Trap–Detrap Techniques C Joishi, S Ghosh, S Kothari, N Parihar, S Mukhopadhyay, S Mahapatra, ... IEEE Transactions on Electron Devices 65 (10), 4245-4253, 2018 | 5 | 2018 |
| Temperature and field dependent low frequency noise characterization of Ge n-FETs S Ghosh, P Bhatt, Y Tiwari, C Joishi, S Lodha Journal of Applied Physics 120 (9), 2016 | 5 | 2016 |
| Thin EOT MoS2 FET for Efficient Photodetection and Gas Sensing K Thakar, A Varghese, S Dhara, S Ghosh, S Lodha 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2018 | 3 | 2018 |
| Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al2O3IL C Joishi, S Kothari, S Ghosh, S Mukhopadhyay, S Mahapatra, S Lodha 2017 IEEE International Reliability Physics Symposium (IRPS), 5C-5.1-5C-5.7, 2017 | 2 | 2017 |
| Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction S Dhara, H Jawa, S Ghosh, A Varghese, S Lodha arXiv preprint arXiv:2009.11350, 2020 | 1 | 2020 |
| All-Electrical High-Sensitivity, Low-Power Dual-Mode Gas Sensing and Recovery with a WSe₂/MoS₂ pn Heterodiode S Dhara, H Jawa, S Ghosh, A Varghese, D Karmakar, S Lodha | | 2021 |
| Tunable WSe2 phototransistor enabled by electrostatically doped lateral p-n homojunction S Ghosh, S Dhara, A Varghese, K Thakar, S Lodha 2019 Device Research Conference (DRC), 163-164, 2019 | | 2019 |
| Plasmonic Enhancement in Anisotropic Thin Films of Rhenium Disulphide (ReS2) B Mukherjee, S Roy, E Simsek, S Ghosh, VG Achanta, S Lodha 2018 IEEE Photonics Conference (IPC), 1-2, 2018 | | 2018 |
| Low Frequency Noise and Mobility Correlation from RT to Low Temperatures for n-Channel Ge MOSFETs S Ghosh, P Bhatt, Y Tiwari, S Lodha | | |
Saurabh LodhaP. K. Kelkar Chair Professor, Electrical Engineering, IIT BombayEmail verificata su ee.iitb.ac.in
