Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence TFK Weatherley, W Liu, V Osokin, DTL Alexander, RA Taylor, JF Carlin, ...
Nano Letters 21, 5217-5224, 2021
41 2021 Impact of defects on Auger recombination in c -plane InGaN/GaN single quantum well in the efficiency droop regime W Liu, C Haller, Y Chen, T Weatherley, JF Carlin, G Jacopin, R Butté, ...
Applied Physics Letters 116 (22), 222106, 2020
28 2020 Optical and structural properties of dislocations in InGaN FCP Massabuau, MK Horton, E Pearce, S Hammersley, P Chen, ...
Journal of Applied Physics 125 (16), 2019
17 2019 Characterisation of InGaN by Photoconductive Atomic Force Microscopy T Weatherley, F Massabuau, M Kappers, R Oliver
Materials 11 (10), 1794, 2018
6 2018 Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities P Lottigier, DM Di Paola, DTL Alexander, TFK Weatherley, ...
Nanomaterials 13 (18), 2569, 2023
5 2023 Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry M Elhajhasan, W Seemann, K Dudde, D Vaske, G Callsen, I Rousseau, ...
Physical Review B 108 (23), 235313, 2023
4 2023 GaN Surface Passivation by MoS2 Coating D Chen, J Jiang, TFK Weatherley, JF Carlin, M Banerjee, N Grandjean
Nano Letters 24 (33), 10124-10130, 2024
2 2024 Joined optical and thermal characterization of a III-nitride semiconductor membrane by micro-photoluminescence spectroscopy and Raman thermometry M Elhajhasan, W Seemann, K Dudde, D Vaske, G Callsen, I Rousseau, ...
arXiv preprint arXiv:2306.16980, 2023
1 2023 Nanoscale investigation of nonradiative point defects in InGaN/GaN quantum wells T Weatherley, G Kusch, DTL Alexander, RA Oliver, JF Carlin, R Butté, ...
Gallium Nitride Materials and Devices XIX, PC1288618, 2024
2024 Excitonic interplay between surface polar III-nitride quantum wells and MoS D Chen, J Jiang, TFK Weatherley, JF Carlin, M Banerjee, N Grandjean
arXiv preprint arXiv:2308.10687, 2023
2023 The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells TFK Weatherley
EPFL, 2023
2023 Point defects and blue LED efficiency: the critical role of indium T Weatherley, W Liu, C Haller, Y Chen, DTL Alexander, JF Carlin, R Butté, ...
Light-Emitting Devices, Materials, and Applications XXV 11706, 1170609, 2021
2021 Impact of point defects on Auger recombination in InGaN/GaN quantum well in the efficiency droop regime W Liu, C Haller, Y Chen, T Weatherley, JF Carlin, G Jacopin, R Butté, ...
Gallium Nitride Materials and Devices XVI 11686, 116861W, 2021
2021 Supplementary Material: Investigation of the impact of point defects in InGaN/GaN quantum wells with high dislocation densities P Lottigier, DM Di Paola, DTL Alexander, TFK Weatherley, ...
Supporting information: Imaging nonradiative point defects buried in quantum wells using cathodoluminescence TFK Weatherley, W Liu, V Osokin, DTL Alexander, RA Taylor, JF Carlin, ...
Nicolas GrandjeanInstitute of Physics, EPFLEmail verificata su epfl.ch