Anupam Madhukar

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Eui-Tae KimMaterials Science & Enginnering, Chungnam National UniversityEmail verificata su cnu.ac.kr
Supratik GuhaUniversity of Chicago and Argonne National LaboratoryEmail verificata su uchicago.edu
Siyuan LuXiaopeng MotorsEmail verificata su xiaopeng.com
Joe CampbellProfessor Electrical and Computer Engineering, University of VirginiaEmail verificata su virginia.edu
Dieter BimbergCIOMP of CAS, Changchun and TU BerlinEmail verificata su physik.tu-berlin.de
Bruce KoelProfessor of Chemical and Biological Engineering, Princeton UniversityEmail verificata su princeton.edu
Priya VashishtaProfessor Materials Science, University of Southern CaliforniaEmail verificata su usc.edu
Satishchandra B. OgaleIndian Institute of Science Education and Research, Pune and The Research Institute for SustainableEmail verificata su iiserpune.ac.in
Prof. Daniel H. RichDepartment of Physics, Ben-Gurion University of the Negev, Beer-Sheva, IsraelEmail verificata su bgu.ac.il
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinEmail verificata su tu-berlin.de
Marius GrundmannUniversität LeipzigEmail verificata su physik.uni-leipzig.de
Jiefei ZhangArgonne National LabEmail verificata su anl.gov
dojin kimchungnam national universityEmail verificata su cnu.ac.kr
Paul Messinaargonne national laboratory. Caltech, California Institute of Technology, CERNEmail verificata su anl.gov
Gail J BrownAir Force Research LaboratoryEmail verificata su us.af.mil
Baris FidanProfessor, Mechanical and Mechatronics Engineering, University of WaterlooEmail verificata su uwaterloo.ca
B. Keith JenkinsProfessor of Electrical Engineering, University of Southern CaliforniaEmail verificata su sipi.usc.edu
Nikolay LedentsovVI Systems GmbHEmail verificata su v-i-systems.com
R. D. VisputeBlue Wave SemiconductorsEmail verificata su bluewavesemi.com
Paulo S BranicioUniversity of Southern CaliforniaEmail verificata su usc.edu

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Anupam Madhukar

University of Southern California

Email verificata su usc.edu - Home page

Epitaxy Nanostructures Photonics Kinetic Monte Carlo


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Vertically self-organized InAs quantum box islands on GaAs (100) Q Xie, A Madhukar, P Chen, NP Kobayashi Physical review letters 75 (13), 2542, 1995	1735	1995
Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1− xAs on GaAs (100) S Guha, A Madhukar, KC Rajkumar Applied Physics Letters 57 (20), 2110-2112, 1990	885	1990
High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Si O 2 and the Si-Si O 2 Interface FJ Grunthaner, PJ Grunthaner, RP Vasquez, BF Lewis, J Maserjian, ... Physical Review Letters 43 (22), 1683, 1979	436	1979
Local atomic and electronic structure of oxide/GaAs and SiO₂/Si interfaces using high‐resolution XPS FJ Grunthaner, PJ Grunthaner, RP Vasquez, BF Lewis, J Maserjian, ... Journal of Vacuum Science and Technology 16 (5), 1443-1453, 1979	409	1979
Collective modes of spatially separated, two-component, two-dimensional plasma in solids SD Sarma, A Madhukar Physical Review B 23 (2), 805, 1981	380	1981
Nature of strained InAs three‐dimensional island formation and distribution on GaAs (100) A Madhukar, Q Xie, P Chen, A Konkar Applied physics letters 64 (20), 2727-2729, 1994	325	1994
Excited states and energy relaxation in stacked InAs/GaAs quantum dots R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ... Physical Review B 57 (15), 9050, 1998	321	1998
Enhanced polar exciton-LO-phonon interaction in quantum dots R Heitz, I Mukhametzhanov, O Stier, A Madhukar, D Bimberg Physical review letters 83 (22), 4654, 1999	320	1999
In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs (001) NP Kobayashi, TR Ramachandran, P Chen, A Madhukar Applied physics letters 68 (23), 3299-3301, 1996	290	1996
High detectivity InAs quantum dot infrared photodetectors ET Kim, A Madhukar, Z Ye, JC Campbell Applied Physics Letters 84 (17), 3277-3279, 2004	275	2004
InAs island‐induced‐strain driven adatom migration during GaAs overlayer growth Q Xie, P Chen, A Madhukar Applied physics letters 65 (16), 2051-2053, 1994	271	1994
Nanoparticle manipulation by mechanical pushing: underlying phenomena and real-time monitoring C Baur, A Bugacov, BE Koel, A Madhukar, N Montoya, TR Ramachandran, ... Nanotechnology 9 (4), 360, 1998	222	1998
Observation of reentrant 2D to 3D morphology transition in highly strained epitaxy: InAs on GaAs R Heitz, TR Ramachandran, A Kalburge, Q Xie, I Mukhametzhanov, ... Physical review letters 78 (21), 4071, 1997	214	1997
Independent manipulation of density and size of stress-driven self-assembled quantum dots I Mukhametzhanov, R Heitz, J Zeng, P Chen, A Madhukar Applied physics letters 73 (13), 1841-1843, 1998	207	1998
The nature of molecular beam epitaxial growth examined via computer simulations A Madhukar, SV Ghaisas Critical Reviews in Solid State and Materials Sciences 14 (1), 1-130, 1988	192	1988
Normal incidence InAs/AlxGa1− xAs quantum dot infrared photodetectors with undoped active region Z Chen, O Baklenov, ET Kim, I Mukhametzhanov, J Tie, A Madhukar, Z Ye, ... Journal of Applied Physics 89 (8), 4558-4563, 2001	187	2001
Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulations A Madhukar Surface Science 132 (1-3), 344-374, 1983	183	1983
Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution I Mukhametzhanov, Z Wei, R Heitz, A Madhukar Applied physics letters 75 (1), 85-87, 1999	172	1999
Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems SD Sarma, A Madhukar Physical Review B 22 (6), 2823, 1980	168	1980
Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems SD Sarma, A Madhukar Physical Review B 22 (6), 2823, 1980	168	1980

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