| Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts Z Sun, SY Kim, J Cai, J Shen, HY Lan, Y Tan, X Wang, C Shen, H Wang, ... ACS nano 18 (33), 22444-22453, 2024 | 10 | 2024 |
| High-Performance Complementary Circuits from Two-Dimensional MoTe2 J Cai, Z Sun, P Wu, R Tripathi, HY Lan, J Kong, Z Chen, J Appenzeller Nano Letters 23 (23), 10939-10945, 2023 | 9 | 2023 |
| Roadmap on low-power electronics R Ramesh, S Salahuddin, S Datta, CH Diaz, DE Nikonov, IA Young, ... APL Materials 12 (9), 2024 | 2 | 2024 |
| Ternary Content-Addressable Memory Based on a Single Two-Dimensional Transistor for Memory-Augmented Learning J Cai, P Wu, R Tripathi, J Kong, Z Chen, J Appenzeller ACS nano 18 (34), 23489-23496, 2024 | 1 | 2024 |
| On‐Chip Synthesis of Quasi‐2D Semimetals from Multi‐Layer Chalcogenides J Cai, H Zhang, Y Tan, Z Sun, P Wu, R Tripathi, S Krylyuk, C Suhy, J Kong, ... Advanced Materials 36 (46), 2410815, 2024 | | 2024 |
| Stable Nitric Oxide Doping in Monolayer WSe2 for High-Performance P-type Transistors Z Chen, HY Lan, CP Lin, J Cai, Z Sun, P Wu, Y Tan, TH Hou, ... | | 2024 |
| Unconventional Spin Hall Effect in Low Symmetry Semimetal for Large Spin-Orbit Readout Unit R Tripathi, HY Lan, P Debashis, H Li, M DC, X Liu, J Cai, ST Konakanchi, ... Bulletin of the American Physical Society, 2024 | | 2024 |
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityEmail verificata su purdue.edu