Active defects in MOS devices on 4H-SiC: A critical review HA Moghadam, S Dimitrijev, J Han, D Haasmann
Microelectronics Reliability 60, 1-9, 2016
70 2016 Transient-current method for measurement of active near-interface oxide traps in 4H-SiC MOS capacitors and MOSFETs HA Moghadam, S Dimitrijev, J Han, D Haasmann, A Aminbeidokhti
IEEE Transactions on Electron Devices 62 (8), 2670-2674, 2015
67 2015 Energy position of the active near-interface traps in metal–oxide–semiconductor field-effect transistors on 4H–SiC D Haasmann, S Dimitrijev
Applied Physics Letters 103 (11), 2013
52 2013 Gate-voltage independence of electron mobility in power AlGaN/GaN HEMTs A Aminbeidokhti, S Dimitrijev, AK Hanumanthappa, HA Moghadam, ...
IEEE Transactions on Electron Devices 63 (3), 1013-1019, 2016
33 2016 Optically Active Defects at the BC Johnson, J Woerle, D Haasmann, CTK Lew, RA Parker, H Knowles, ...
Physical Review Applied 12 (4), 044024, 2019
28 2019 Comparison of commercial planar and trench SiC MOSFETs by electrical characterization of performance-degrading near-interface traps M Chaturvedi, S Dimitrijev, D Haasmann, HA Moghadam, P Pande, ...
IEEE Transactions on Electron Devices 69 (11), 6225-6230, 2022
26 2022 Quantified density of performance-degrading near-interface traps in SiC MOSFETs M Chaturvedi, S Dimitrijev, D Haasmann, HA Moghadam, P Pande, ...
Scientific reports 12 (1), 4076, 2022
25 2022 Electrical characterization of SiC MOS capacitors: A critical review P Pande, D Haasmann, J Han, HA Moghadam, P Tanner, S Dimitrijev
Microelectronics Reliability 112, 113790, 2020
22 2020 Near-interface trap model for the low temperature conductance signal in SiC MOS capacitors with nitrided gate oxides JR Nicholls, AM Vidarsson, D Haasmann, EÖ Sveinbjörnsson, ...
IEEE Transactions on Electron Devices 67 (9), 3722-3728, 2020
19 2020 Direct measurement of active near-interface traps in the strong-accumulation region of 4H-SiC MOS capacitors P Pande, S Dimitrijev, D Haasmann, HA Moghadam, P Tanner, J Han
IEEE Journal of the Electron Devices Society 6, 468-474, 2018
19 2018 Quantified density of active near interface oxide traps in 4H-SiC MOS capacitors HA Moghadam, S Dimitrijev, JS Han, A Aminbeidokhti, D Haasmann
Materials Science Forum 858, 603-606, 2016
14 2016 Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods AM Vidarsson, JR Nicholls, D Haasmann, S Dimitrijev, ...
Journal of Applied Physics 131 (21), 2022
13 2022 Influence of various NO annealing conditions on N-type and P-type 4H-SiC MOS capacitors Y Jia, H Lv, X Tang, C Han, Q Song, Y Zhang, Y Zhang, S Dimitrijev, ...
Journal of Materials Science: Materials in Electronics 30, 10302-10310, 2019
13 2019 Impact of nitridation on the active near-interface traps in gate oxides on 4H-SiC P Pande, S Dimitrijev, D Haasmann, HA Moghadam, M Chaturvedi, ...
Solid-State Electronics 171, 107874, 2020
11 2020 Energy-localized near-interface traps active in the strong-accumulation region of 4H-SiC MOS capacitors P Pande, S Dimitrijev, D Haasmann, HA Moghadam, P Tanner, J Han
IEEE Transactions on Electron Devices 66 (4), 1704-1709, 2019
11 2019 A figure of merit for selection of the best family of SiC power MOSFETs M Chaturvedi, S Dimitrijev, D Haasmann, HA Moghadam, P Pande, ...
Electronics 11 (9), 1433, 2022
7 2022 A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements JR Nicholls, AM Vidarsson, D Haasmann, EÖ Sveinbjörnsson, ...
Journal of Applied Physics 129 (5), 2021
7 2021 Growth of gate oxides on 4H-SiC by NO at low partial pressures D Haasmann, S Dimitrijev, JS Han, A Iacopi
Materials Science Forum 778, 627-630, 2014
7 2014 Electrically active defects in SiC power MOSFETs M Chaturvedi, D Haasmann, HA Moghadam, S Dimitrijev
Energies 16 (4), 1771, 2023
6 2023 The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents J Damcevska, S Dimitrijev, D Haasmann, P Tanner
Scientific Reports 13 (1), 19189, 2023
4 2023 