| Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review M Cabello, V Soler, G Rius, J Montserrat, J Rebollo, P Godignon Materials Science in Semiconductor Processing 78, 22-31, 2018 | 132 | 2018 |
| Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by VSD-Method F Hoffmann, V Soler, A Mihaila, N Kaminski 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 34 | 2019 |
| High-voltage 4H-SiC power MOSFETs with Boron-doped gate oxide V Soler, M Cabello, M Berthou, J Montserrat, J Rebollo, P Godignon, ... IEEE Transactions on Industrial Electronics 64 (11), 8962-8970, 2017 | 28 | 2017 |
| Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors M Cabello, V Soler, J Montserrat, J Rebollo, JM Rafí, P Godignon Applied Physics Letters 111 (4), 2017 | 24 | 2017 |
| 4.5 kV SiC MOSFET with boron doped gate dielectric V Soler, M Cabello, J Montserrat, J Rebollo, J Millán, P Godignon, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 20 | 2016 |
| New trends in high voltage MOSFET based on wide band gap materials P Godignon, V Soler, M Cabello, J Montserrat, J Rebollo, L Knoll, ... 2017 international semiconductor conference (CAS), 3-10, 2017 | 19 | 2017 |
| High-voltage SiC devices: diodes and MOSFETs J Millán, P Friedrichs, A Mihaila, V Soler, J Rebollo, V Banu, P Godignon 2015 International Semiconductor Conference (CAS), 11-18, 2015 | 17 | 2015 |
| Power cycling analysis method for high-voltage SiC diodes V Banu, V Soler, J Montserrat, J Millán, P Godignon Microelectronics Reliability 64, 429-433, 2016 | 11 | 2016 |
| Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion M Cabello, V Soler, N Mestres, J Montserrat, J Rebollo, J Millán, ... Materials Science Forum 897, 352-355, 2017 | 10 | 2017 |
| Planar edge terminations for high voltage 4H-SiC power MOSFETs V Soler, M Berthou, A Mihaila, J Monserrat, P Godignon, J Rebollo, ... Semiconductor Science and Technology 32 (3), 035007, 2017 | 9 | 2017 |
| SiC power switches evaluation for space applications requirements P Godignon, S Massetti, X Jordà, V Soler, J Moreno, D Lopez, E Maset Materials Science Forum 858, 852-855, 2016 | 9 | 2016 |
| Reliability and robustness tests for next-generation high-voltage SiC MOSFETs V Soler, M Cabello, V Banu, X Jordà, J Montserrat, J Rebollo, MR Rogina, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020 | 8 | 2020 |
| Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs M Cabello, V Soler, L Knoll, J Montserrat, J Rebollo, A Mihaila, ... Materials Science in Semiconductor Processing 93, 357-359, 2019 | 7 | 2019 |
| Complementary p-channel and n-channel SiC MOSFETs for CMOS integration V Soler, M Cabello, V Banu, J Montserrat, J Rebollo, P Godignon Materials Science Forum 924, 975-979, 2018 | 6 | 2018 |
| Experimental investigation of SiC 6.5 kV JBS diodes safe operating area A Mihaila, E Bianda, L Knoll, U Vemulapati, L Kranz, G Alfieri, V Soler, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 6 | 2017 |
| Experimental analysis of planar edge terminations for high voltage 4H-SiC devices V Soler, M Berthou, A Mihaila, J Montserrat, P Godignon, J Rebollo, ... 2015 45th European Solid State Device Research Conference (ESSDERC), 68-71, 2015 | 6 | 2015 |
| Design and fabrication of high voltage 4H-SiC MOS transistors V Soler, M Berthou, P Godignon, J Montserrat, M Florentin, J Rebollo, ... SAAEI-2015, 2015 | 5 | 2015 |
| Design and process developments towards an optimal 6.5 kV SiC power MOSFET V Soler Universitat Politècnica de Catalunya, 2019 | 4 | 2019 |
| Evidence of channel mobility anisotropy on 4H-SiC MOSFETs with low interface trap density M Cabello, V Soler, D Haasmann, J Montserrat, J Rebollo, P Godignon Materials Science Forum 963, 473-478, 2019 | 4 | 2019 |
| Exploring the stacking of devices in a vertical nanowire to implement IC E Amat, A Del Moral, V Soler, J Bausells, F Perez-Murano 2022 IEEE 22nd International Conference on Nanotechnology (NANO), 389-392, 2022 | 2 | 2022 |
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