| AlGaN nanowires for ultraviolet light-emitting: recent progress, challenges, and prospects S Zhao, J Lu, X Hai, X Yin Micromachines 11 (2), 125, 2020 | 63 | 2020 |
| Molecular beam epitaxial growth of AlN thin films on Si through exploiting low Al adatom migration and the nitrogen-rich environment on a nanowire template X Yin, Q Zhang, S Zhao Crystal Growth & Design 21 (7), 3645-3649, 2021 | 21 | 2021 |
| Molecular beam epitaxial growth and optical characterization of AlGaN nanowires with reduced substrate temperature Y Zhong, E Berikaa, J Lu, X Yin, S Zhao AIP Advances 10 (2), 2020 | 19 | 2020 |
| Recent progress on aluminum gallium nitride deep ultraviolet lasers by molecular beam epitaxy Q Zhang, X Yin, S Zhao physica status solidi (RRL)–Rapid Research Letters 15 (7), 2100090, 2021 | 14 | 2021 |
| High internal quantum efficiency AlGaN Epilayer grown by molecular beam epitaxy on Si substrate X Yin, S Zhao ECS Journal of Solid State Science and Technology 10 (7), 076001, 2021 | 13 | 2021 |
| Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate Q Zhang, X Yin, E Martel, S Zhao Materials Science in Semiconductor Processing 135, 106099, 2021 | 12 | 2021 |
| Improving charge carrier transport properties in AlGaN deep ultraviolet light emitters using Al-content engineered superlattice electron blocking layer X Yin, S Zhao IEEE Journal of Quantum Electronics 59 (1), 1-6, 2023 | 9 | 2023 |
| Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet X Yin, S Zhao physica status solidi (b) 257 (12), 2000287, 2020 | 8 | 2020 |
| Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy X Yin, S Zhao physica status solidi (b) 258 (11), 2100201, 2021 | 5 | 2021 |
| Vertical AlGaN Deep Ultraviolet Light Emitting Diodes with Polarization Enhanced p-AlGaN Epilayer on Si Substrate Q Zhang, H Parimoo, E Martel, X Yin, S Zhao ECS Journal of Solid State Science and Technology 11 (6), 066003, 2022 | 4 | 2022 |
| Recent progress on molecular beam epitaxy of AlGaN nanowires for deep ultraviolet light emitting devices S Zhao, Q Zhang, H Parimoo, X Yin ECS Transactions 108 (6), 3, 2022 | 3 | 2022 |
| Vertical, Surface-emitting, Human-safe-wavelength semiconductor UV LEDs with AlGaN nanowires (Conference Presentation) S Zhao, Q Zhang, X Yin, H Parimoo, M Vafadar Light-Emitting Devices, Materials, and Applications XXVII, PC124410B, 2023 | | 2023 |
| Molecular beam epitaxy of AlGaN epilayers on foreign substrates for semiconductor deep ultraviolet lasers X Yin McGill University, 2023 | | 2023 |
| Polarity Control of Nanowire-template-assisted AlN Epilayers on Si by Molecular Beam Epitaxy QD Zhang, X Yin, S Zhao 2022 Photonics North (PN), 1-1, 2022 | | 2022 |
| AlGaN Epilayers on Si Substrate with High Internal Quantum Efficiency QD Zhang, X Yin, S Zhao 2022 Photonics North (PN), 1-1, 2022 | | 2022 |
| AlGaN Deep Ultraviolet Lasers at 287 nm by Molecular Beam Epitaxy X Yin, S Zhao 2021 Photonics North (PN), 1-1, 2021 | | 2021 |