Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry MA Reshchikov, M Vorobiov, O Andrieiev, K Ding, N Izyumskaya, ...
Scientific Reports 10 (1), 2223, 2020
36 2020 Shallow and deep states of beryllium acceptor in GaN: Why photoluminescence experiments do not reveal small polarons for defects in semiconductors DO Demchenko, M Vorobiov, O Andrieiev, TH Myers, MA Reshchikov
Physical Review Letters 126 (2), 027401, 2021
27 2021 The effect of annealing on photoluminescence from defects in ammonothermal GaN MA Reshchikov, DO Demchenko, D Ye, O Andrieiev, M Vorobiov, ...
Journal of Applied Physics 131 (3), 2022
24 2022 Point defects in beryllium-doped GaN M Vorobiov, O Andrieiev, DO Demchenko, MA Reshchikov
Physical Review B 104 (24), 245203, 2021
21 2021 Photoluminescence related to Ca in GaN MA Reshchikov, DO Demchenko, M Vorobiov, O Andrieiev, B McEwen, ...
Physical Review B 106 (3), 035206, 2022
16 2022 Stability of the CN Hi Complex and the Blue Luminescence Band in GaN MA Reshchikov, O Andrieiev, M Vorobiov, B McEwen, ...
physica status solidi (b) 258 (12), 2100392, 2021
16 2021 MOCVD Growth and Characterization of Be-Doped GaN B McEwen, MA Reshchikov, E Rocco, V Meyers, K Hogan, O Andrieiev, ...
ACS Applied Electronic Materials 4 (8), 3780-3785, 2022
14 2022 Dual nature of the MA Reshchikov, M Vorobiov, O Andrieiev, DO Demchenko, B McEwen, ...
Physical Review B 108 (7), 075202, 2023
12 2023 Photoluminescence from GaN implanted with Be and F MA Reshchikov, O Andrieiev, M Vorobiov, DO Demchenko, B McEwen, ...
physica status solidi (b) 260 (9), 2300131, 2023
11 2023 Thermal annealing of GaN implanted with Be MA Reshchikov, O Andrieiev, M Vorobiov, D Ye, DO Demchenko, ...
Journal of Applied Physics 131 (12), 2022
11 2022 Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition MA Reshchikov, M Vorobiov, O Andrieiev, B McEwen, E Rocco, V Meyers, ...
physica status solidi (b) 260 (8), 2200487, 2023
9 2023 Photoluminescence from CdGa and HgGa acceptors in GaN MA Reshchikov, O Andrieiev, M Vorobiov, DO Demchenko, B McEwen, ...
Journal of Applied Physics 135 (15), 2024
4 2024 Nitrogen vacancy–acceptor complexes in gallium nitride M Vorobiov, DO Demchenko, O Andrieiev, MA Reshchikov
Journal of Applied Physics 135 (15), 2024
4 2024 Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of acceptors in GaN DO Demchenko, M Vorobiov, O Andrieiev, MA Reshchikov, B McEwen, ...
Physical Review B 110 (3), 035203, 2024
1 2024 Passivation of acceptors in GaN by hydrogen and their activation MA Reshchikov, O Andrieiev, M Vorobiov, D Ye, DO Demchenko, ...
Nanotechnology 36 (10), 105704, 2025
2025 Incorporation and Interaction of Co‐Doped Be and Mg in GaN Grown by Metal‐Organic Chemic Vapor Deposition B McEwen, E Rocco, V Meyers, A Lanjani, S Omranpour, O Andrieiev, ...
physica status solidi (b) 261 (10), 2400211, 2024
2024 Physics of acceptors in GaN: Koopmans tuned HSE hybrid functional calculations and experiment DO Demchenko, M Vorobiov, O Andrieiev, MA Reshchikov, B MvEwen, ...
arXiv preprint arXiv:2404.06603, 2024
2024 Effect of Annealing on Photoluminescence from Defects in GaN O Andrieiev
2024 Influence of dislocation density and interfacial lattice mismatch on MOCVD-grown Be-doped GaN B McEwen, MA Reshchikov, E Rocco, V Meyers, A Lanjani, O Andrieiev, ...
Gallium Nitride Materials and Devices XVIII, 2023
2023 Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN B McEwen, M Reshchikov, E Rocco, V Meyers, K Hogan, O Andrieiev, ...
Gallium Nitride Materials and Devices XVII, PC120010B, 2022
2022 
Mykhailo VorobiovCollege of Willaim & MaryEmail verificata su wm.edu
