Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application M Kobayashi, A Kinoshita, K Saraswat, HSP Wong, Y Nishi
Journal of applied physics 105 (2), 2009
239 2009 Candidate Resonant Tetraneutron State Populated by the K Kisamori, S Shimoura, H Miya, S Michimasa, S Ota, M Assie, H Baba, ...
Physical review letters 116 (5), 052501, 2016
232 2016 Magic Nature of Neutrons in S Michimasa, M Kobayashi, Y Kiyokawa, S Ota, DS Ahn, H Baba, ...
Physical review letters 121 (2), 022506, 2018
156 2018 Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface Z Liu, M Kobayashi, BC Paul, Z Bao, Y Nishi
Physical Review B—Condensed Matter and Materials Physics 82 (3), 035311, 2010
135 2010 Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process M Kobayashi, Y Tagawa, F Mo, T Saraya, T Hiramoto
IEEE Journal of the Electron Devices Society 7, 134-139, 2018
124 2018 Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO2 M Kobayashi, N Ueyama, K Jang, T Hiramoto
2016 IEEE International Electron Devices Meeting (IEDM), 12.3. 1-12.3. 4, 2016
122 2016 Negative capacitance for boosting tunnel FET performance M Kobayashi, K Jang, N Ueyama, T Hiramoto
IEEE Transactions on Nanotechnology 16 (2), 253-258, 2017
115 2017 On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2 V supply voltage with ferroelectric HfO2 thin film M Kobayashi, T Hiramoto
AIP Advances 6 (2), 2016
111 2016 On testing CPT symmetry in B decays M Kobayashi, AI Sanda
Physical review letters 69 (22), 3139, 1992
111 1992 Low-voltage operating ferroelectric FET with ultrathin IGZO channel for high-density memory application F Mo, Y Tagawa, C Jin, MJ Ahn, T Saraya, T Hiramoto, M Kobayashi
IEEE Journal of the Electron Devices Society 8, 717-723, 2020
109 2020 Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack M Kobayashi, G Thareja, M Ishibashi, Y Sun, P Griffin, J McVittie, ...
Journal of Applied Physics 106 (10), 2009
102 2009 Towards large size substrates for III-V co-integration made by direct wafer bonding on Si N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ...
APL materials 2 (8), 2014
95 2014 Experimental Demonstration of Ferroelectric HfO2 FET with Ultrathin-body IGZO for High-Density and Low-Power Memory Application F Mo, Y Tagawa, C Jin, MJ Ahn, T Saraya, T Hiramoto, M Kobayashi
2019 Symposium on VLSI Technology, T42-T43, 2019
87 2019 Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors M Kobayashi, T Hiramoto
Journal of Applied Physics 103 (5), 2008
85 2008 A direct dark matter search in XMASS-I K Abe, K Hiraide, K Ichimura, Y Kishimoto, K Kobayashi, M Kobayashi, ...
Physics Letters B 789, 45-53, 2019
82 2019 High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD J Feng, G Thareja, M Kobayashi, S Chen, A Poon, Y Bai, PB Griffin, ...
IEEE Electron Device Letters 29 (7), 805-807, 2008
82 2008 A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor M Kobayashi
Applied Physics Express 11 (11), 110101, 2018
77 2018 Quasifree Neutron Knockout Reaction Reveals a Small ZH Yang, Y Kubota, A Corsi, K Yoshida, XX Sun, JG Li, M Kimura, ...
Physical review letters 126 (8), 082501, 2021
74 2021 Extraction of the Landau-Migdal Parameter from the Gamow-Teller Giant Resonance in J Yasuda, M Sasano, RGT Zegers, H Baba, D Bazin, W Chao, M Dozono, ...
Physical review letters 121 (13), 132501, 2018
74 2018 Electronic structure and magnetism of the diluted magnetic semiconductor Fe-doped ZnO nanoparticles T Kataoka, M Kobayashi, Y Sakamoto, GS Song, A Fujimori, FH Chang, ...
Journal of Applied Physics 107 (3), 2010
74 2010 