226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ...
Applied physics letters 113 (1), 2018
99 2018 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ...
Applied Physics Letters 112 (8), 2018
85 2018 Lattice-mismatched semiconductor heterostructures D Liu, SJ Cho, JH Seo, K Kim, M Kim, J Shi, X Yin, W Choi, C Zhang, ...
arXiv preprint arXiv:1812.10225, 2018
42 2018 Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs SJ Cho, D Liu, A Hardy, J Kim, J Gong, CJ Herrera-Rodriguez, E Swinnich, ...
AIP Advances 10 (12), 2020
41 2020 P-type silicon as hole supplier for nitride-based UVC LEDs SJ Cho, D Liu, JH Seo, R Dalmau, K Kim, J Park, J Gong, D Zhao, F Wang, ...
New Journal of Physics 21 (2), 023011, 2019
32 2019 Reduction of leakage current in GaN Schottky diodes through ultraviolet/ozone plasma treatment K Kim, D Liu, J Gong, Z Ma
IEEE Electron Device Letters 40 (11), 1796-1799, 2019
21 2019 AlGaN/GaN Schottky-gate HEMTs With UV/O₃-treated gate interface K Kim, TJ Kim, H Zhang, D Liu, YH Jung, J Gong, Z Ma
IEEE Electron Device Letters 41 (10), 1488-1491, 2020
20 2020 Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements J Gong, Z Zheng, D Vincent, J Zhou, J Kim, D Kim, TK Ng, BS Ooi, ...
Journal of Applied Physics 132 (13), 2022
19 2022 Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs D Liu, SJ Cho, H Zhang, CR Carlos, ARK Kalapala, J Park, J Kim, ...
AIP Advances 9 (8), 2019
15 2019 Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 pn heterojunction J Zhou, J Gong, M Sheikhi, A Dheenan, Q Wang, H Abbasi, Y Liu, ...
Applied Surface Science 663, 160176, 2024
14 2024 Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes J Gong, J Zhou, P Wang, TH Kim, K Lu, S Min, R Singh, M Sheikhi, ...
Advanced Electronic Materials 9 (5), 2201309, 2023
14 2023 Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN J Gong, K Lu, J Kim, TK Ng, D Kim, J Zhou, D Liu, J Kim, BS Ooi, Z Ma
Japanese Journal of Applied Physics 61 (1), 011003, 2021
14 2021 Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) pn heterojunction determined by X-ray photoelectron spectroscopy J Gong, J Zhou, A Dheenan, M Sheikhi, F Alema, TK Ng, SS Pasayat, ...
Applied Surface Science 655, 159615, 2024
13 2024 0.86 kV p-Si/(001)-Ga2 O3 heterojunction diode S Xie, MT Alam, J Gong, Q Lin, M Sheikhi, J Zhou, F Alema, A Osinsky, ...
IEEE Electron Device Letters, 2024
13 2024 Characteristics of grafted monocrystalline Si/β-Ga2O3p–n heterojunction J Gong, D Kim, H Jang, F Alema, Q Wang, J Zhou, Y Li, TK Ng, S Qiu, ...
Applied Physics Letters 124 (26), 2024
11 2024 Metal-Al2O3-GaN capacitors with an ultraviolet/ozone plasma-treated interface K Kim, J Kim, J Gong, D Liu, Z Ma
Japanese Journal of Applied Physics 59 (3), 030908, 2020
10 2020 Characteristics of native oxides-interfaced GaAs/Ge np diodes J Zhou, J Gong, S Lal, J Kim, W Lin, C Chen, C Li, Y Lu, S Qiu, Y Dong, ...
IEEE Electron Device Letters, 2024
6 2024 Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 npn double heterojunctions J Zhou, A Dheenan, J Gong, C Adamo, P Marshall, M Sheikhi, TH Tsai, ...
arXiv preprint arXiv:2308.06575, 2023
6 2023 Monocrystalline Si/ J Gong, D Kim, H Jang, F Alema, Q Wang, TK Ng, S Qiu, J Zhou, X Su, ...
arXiv preprint arXiv:2305.19138, 2023
6 2023 Passivation of CdTe/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition HN Abbasi, X Qi, J Gong, Z Ju, S Min, YH Zhang, Z Ma
Journal of Applied Physics 134 (13), 2023
5 2023 
Dong LiuUniversity of Wisconsin MadisonEmail verificata su wisc.edu