| Probabilistic computing using Cu0.1Te0.9/HfO2/Pt diffusive memristors KS Woo, J Kim, J Han, W Kim, YH Jang, CS Hwang Nature Communications 13 (1), 5762, 2022 | 66 | 2022 |
| Time-varying data processing with nonvolatile memristor-based temporal kernel YH Jang, W Kim, J Kim, KS Woo, HJ Lee, JW Jeon, SK Shim, J Han, ... Nature communications 12 (1), 5727, 2021 | 66 | 2021 |
| A High‐Speed True Random Number Generator Based on a CuxTe1−x Diffusive Memristor KS Woo, J Kim, J Han, JM Choi, W Kim, CS Hwang Advanced Intelligent Systems 3 (7), 2100062, 2021 | 53 | 2021 |
| Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network GS Kim, H Song, YK Lee, JH Kim, W Kim, TH Park, HJ Kim, K Min Kim, ... ACS applied materials & interfaces 11 (50), 47063-47072, 2019 | 53 | 2019 |
| A true random number generator using threshold‐switching‐based memristors in an efficient circuit design KS Woo, Y Wang, J Kim, Y Kim, YJ Kwon, JH Yoon, W Kim, CS Hwang Advanced Electronic Materials 5 (2), 1800543, 2019 | 48 | 2019 |
| Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior S Yoo, C Yoo, ES Park, W Kim, YK Lee, CS Hwang Journal of Materials Chemistry C 6 (18), 5025-5032, 2018 | 42 | 2018 |
| A combination of a volatile‐memristor‐based true random‐number generator and a nonlinear‐feedback shift register for high‐speed encryption KS Woo, Y Wang, Y Kim, J Kim, W Kim, CS Hwang Advanced Electronic Materials 6 (5), 1901117, 2020 | 41 | 2020 |
| Atomic layer deposition of chalcogenides for next-generation phase change memory YK Lee, C Yoo, W Kim, JW Jeon, CS Hwang Journal of Materials Chemistry C 9 (11), 3708-3725, 2021 | 36 | 2021 |
| Atomic Layer Deposition of GexSe1–x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage C Yoo, W Kim, JW Jeon, ES Park, M Ha, YK Lee, CS Hwang ACS applied materials & interfaces 12 (20), 23110-23118, 2020 | 31 | 2020 |
| Atomic layer deposition of GeSe films using HGeCl3 and [(CH3) 3Si] 2Se with the discrete feeding method for the ovonic threshold switch W Kim, S Yoo, C Yoo, ES Park, J Jeon, YJ Kwon, KS Woo, HJ Kim, ... Nanotechnology 29 (36), 365202, 2018 | 27 | 2018 |
| Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory ES Park, C Yoo, W Kim, M Ha, JW Jeon, T Eom, YK Lee, CS Hwang Chemistry of Materials 31 (21), 8752-8763, 2019 | 23 | 2019 |
| Electroforming-free bipolar resistive switching in GeSe thin films with a Ti-containing electrode W Kim, C Yoo, ES Park, M Ha, JW Jeon, GS Kim, KS Woo, YK Lee, ... ACS applied materials & interfaces 11 (42), 38910-38920, 2019 | 20 | 2019 |
| Matrix mapping on crossbar memory arrays with resistive interconnects and its use in in-memory compression of biosignals YK Lee, JW Jeon, ES Park, C Yoo, W Kim, M Ha, CS Hwang Micromachines 10 (5), 306, 2019 | 20 | 2019 |
| Graph Analysis with Multifunctional Self‐Rectifying Memristive Crossbar Array YH Jang, J Han, J Kim, W Kim, KS Woo, J Kim, CS Hwang Advanced Materials 35 (10), 2209503, 2023 | 19 | 2023 |
| Developing precursor chemistry for atomic layer deposition of high-density, conformal GeTe films for phase-change memory ES Park, C Yoo, W Kim, M Ha, JW Jeon, YK Lee, CS Hwang Chemistry of Materials 31 (21), 8663-8672, 2019 | 19 | 2019 |
| Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory C Yoo, JW Jeon, S Yoon, Y Cheng, G Han, W Choi, B Park, G Jeon, ... Advanced Materials 34 (50), 2207143, 2022 | 18 | 2022 |
| Spatiotemporal Data Processing with Memristor Crossbar‐Array‐Based Graph Reservoir YH Jang, SH Lee, J Han, W Kim, SK Shim, S Cheong, KS Woo, JK Han, ... Advanced Materials 36 (7), 2309314, 2024 | 17 | 2024 |
| Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films HJ Lee, T Moon, S Kang, W Kim, CS Hwang ACS Applied Electronic Materials 3 (7), 3247-3255, 2021 | 10 | 2021 |
| Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Coinjection YK Lee, ES Park, C Yoo, W Kim, JW Jeon, M Ha, CS Hwang Crystal Growth & Design 20 (7), 4649-4656, 2020 | 6 | 2020 |
| Atomic layer deposition of SnSe x thin films using Sn (N (CH 3) 2) 4 and Se (Si (CH 3) 3) 2 with NH 3 co-injection JW Jeon, C Yoo, W Kim, W Choi, B Park, YK Lee, CS Hwang Dalton Transactions 51 (2), 594-601, 2022 | 3 | 2022 |
