| Conducting polymer nanostructures: template synthesis and applications in energy storage L Pan, H Qiu, C Dou, Y Li, L Pu, J Xu, Y Shi International journal of molecular sciences 11 (7), 2636-2657, 2010 | 399 | 2010 |
| CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors WH Chen, C Dou, KX Li, WY Lin, PY Li, JH Huang, JH Wang, WC Wei, ... Nature Electronics 2 (9), 420-428, 2019 | 222 | 2019 |
| Formation of multiple conductive filaments in the Cu/ZrO2: Cu/Pt device Q Liu, C Dou, Y Wang, S Long, W Wang, M Liu, M Zhang, J Chen Applied Physics Letters 95 (2), 2009 | 138 | 2009 |
| Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks X Zhang, J Lu, Z Wang, R Wang, J Wei, T Shi, C Dou, Z Wu, J Zhu, ... Science Bulletin 66 (16), 1624-1633, 2021 | 86 | 2021 |
| One transistor one electrolyte‐gated transistor based spiking neural network for power‐efficient neuromorphic computing system Y Li, Z Xuan, J Lu, Z Wang, X Zhang, Z Wu, Y Wang, H Xu, C Dou, Y Kang, ... Advanced Functional Materials 31 (26), 2100042, 2021 | 86 | 2021 |
| Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications-Computational Memory, Deep Learning, and Spiking Neural Networks S Spiga, A Sebastian, D Querlioz, B Rajendran Woodhead Publishing, 2020 | 56 | 2020 |
| Graphene overcoats for ultra-high storage density magnetic media N Dwivedi, AK Ott, K Sasikumar, C Dou, RJ Yeo, B Narayanan, U Sassi, ... Nature Communications 12 (1), 2854, 2021 | 52 | 2021 |
| STICKER-IM: A 65 nm computing-in-memory NN processor using block-wise sparsity optimization and inter/intra-macro data reuse J Yue, Y Liu, Z Yuan, X Feng, Y He, W Sun, Z Zhang, X Si, R Liu, Z Wang, ... IEEE Journal of Solid-State Circuits 57 (8), 2560-2573, 2022 | 46 | 2022 |
| Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer C Dou, K Kakushima, P Ahmet, K Tsutsui, A Nishiyama, N Sugii, K Natori, ... Microelectronics Reliability 52 (4), 688-691, 2012 | 45 | 2012 |
| Efficient and robust nonvolatile computing-in-memory based on voltage division in 2T2R RRAM with input-dependent sensing control L Wang, W Ye, C Dou, X Si, X Xu, J Liu, D Shang, J Gao, F Zhang, Y Liu, ... IEEE Transactions on Circuits and Systems II: Express Briefs 68 (5), 1640-1644, 2021 | 39 | 2021 |
| A 28nm 16.9-300TOPS/W computing-in-memory processor supporting floating-point NN inference/training with intensive-CIM sparse-digital architecture J Yue, C He, Z Wang, Z Cong, Y He, M Zhou, W Sun, X Li, C Dou, F Zhang, ... 2023 IEEE International Solid-State Circuits Conference (ISSCC), 1-3, 2023 | 37 | 2023 |
| Fully memristive SNNs with temporal coding for fast and low-power edge computing X Zhang, Z Wu, J Lu, J Wei, J Lu, J Zhu, J Qiu, R Wang, K Lou, Y Wang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 29.6. 1-29.6. 4, 2020 | 36 | 2020 |
| A 4T2R RRAM bit cell for highly parallel ternary content addressable memory X Wang, L Wang, Y Wang, J An, C Dou, Z Wu, X Zhang, J Liu, C Zhang, ... IEEE Transactions on Electron Devices 68 (10), 4933-4937, 2021 | 33 | 2021 |
| Determination of energy and spatial distribution of oxide border traps in In0. 53Ga0. 47As MOS capacitors from capacitance–voltage characteristics measured at various temperatures C Dou, D Lin, A Vais, T Ivanov, HP Chen, K Martens, K Kakushima, H Iwai, ... Microelectronics Reliability 54 (4), 746-754, 2014 | 33 | 2014 |
| Nonvolatile circuits-devices interaction for memory, logic and artificial intelligence CM Dou, WH Chen, CX Xue, WY Lin, WE Lin, JY Li, HT Lin, M Chang 2018 IEEE Symposium on VLSI Technology, 171-172, 2018 | 29 | 2018 |
| Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor CV and the capture/emission process of border traps A Vais, HC Lin, C Dou, K Martens, T Ivanov, Q Xie, F Tang, M Givens, ... Applied Physics Letters 107 (5), 2015 | 29 | 2015 |
| Energy efficient and robust reservoir computing system using ultrathin (3.5 nm) ferroelectric tunneling junctions for temporal data learning J Yu, Y Li, W Sun, W Zhang, Z Gao, D Dong, Z Yu, Y Zhao, J Lai, Q Ding, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 25 | 2021 |
| A low-power vertical dual-gate neurotransistor with short-term memory for high energy-efficient neuromorphic computing H Xu, D Shang, Q Luo, J An, Y Li, S Wu, Z Yao, W Zhang, X Xu, C Dou, ... Nature Communications 14 (1), 6385, 2023 | 21 | 2023 |
| Mixed‐Precision Continual Learning Based on Computational Resistance Random Access Memory Y Li, W Zhang, X Xu, Y He, D Dong, N Jiang, F Wang, Z Guo, S Wang, ... Advanced Intelligent Systems 4 (8), 2200026, 2022 | 20 | 2022 |
| An ADC-less RRAM-based computing-in-memory macro with binary CNN for efficient edge AI Y Li, J Chen, L Wang, W Zhang, Z Guo, J Wang, Y Han, Z Li, F Wang, ... IEEE Transactions on Circuits and Systems II: Express Briefs 70 (6), 1871-1875, 2023 | 19 | 2023 |
