1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2 O3 MOSFETs K Zeng, A Vaidya, U Singisetti
IEEE Electron Device Letters 39 (9), 1385-1388, 2018
244 2018 Field-Plated Lateral Ga2 O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage S Sharma, K Zeng, S Saha, U Singisetti
IEEE Electron Device Letters 41 (6), 836-839, 2020
232 2020 Ga2 O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology K Zeng, JS Wallace, C Heimburger, K Sasaki, A Kuramata, T Masui, ...
IEEE Electron Device Letters 38 (4), 513-516, 2017
151 2017 Device-Level thermal management of gallium oxide field-effect transistors B Chatterjee, K Zeng, CD Nordquist, U Singisetti, S Choi
IEEE Transactions on Components, Packaging and Manufacturing Technology 9 …, 2019
135 2019 Interface State Density in Atomic Layer Deposited SiO2 /2 O3 ( K Zeng, Y Jia, U Singisetti
IEEE Electron Device Letters 37 (7), 906-909, 2016
122 2016 Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2¯ 01) Y Jia, K Zeng, JS Wallace, JA Gardella, U Singisetti
Applied Physics Letters 106 (10), 2015
111 2015 A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm2 on-resistance K Zeng, A Vaidya, U Singisetti
Applied Physics Express 12 (8), 081003, 2019
87 2019 Flexible β‐Ga2 O3 Nanomembrane Schottky Barrier Diodes E Swinnich, MN Hasan, K Zeng, Y Dove, U Singisetti, B Mazumder, ...
Advanced Electronic Materials 5 (3), 1800714, 2019
69 2019 Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations K Zeng, U Singisetti
Applied Physics Letters 111 (12), 2017
54 2017 Vertical Ga2 O3 MOSFET With Magnesium Diffused Current Blocking Layer K Zeng, R Soman, Z Bian, S Jeong, S Chowdhury
IEEE Electron Device Letters 43 (9), 1527-1530, 2022
42 2022 Designing Beveled Edge Termination in GaN Vertical pin Diode-Bevel Angle, Doping, and Passivation K Zeng, S Chowdhury
IEEE Transactions on Electron Devices 67 (6), 2457-2462, 2020
37 2020 2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer Z Bian, K Zeng, S Chowdhury
IEEE Electron Device Letters 43 (4), 596-599, 2022
27 2022 Depletion and enhancement mode β-Ga 2 O 3 MOSFETs with ALD SiO 2 gate and near 400 V breakdown voltage K Zeng, K Sasaki, A Kuramata, T Masui, U Singisetti
74th Device Research Conference (DRC), 1-2, 2016
25 2016 A field-plated Ga₂O₃ MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm² on-resistance K Zeng, A Vaidya, U Singisetti
Appl. Phys. Exp. 12 (8), 2019
20 2019 Modeling and power loss evaluation of ultra wide band gap Ga2 O3 device for high power applications I Lee, A Kumar, K Zeng, U Singisetti, X Yao
Energy Conversion Congress and Exposition (ECCE), 2017 IEEE, 4377-4382, 2017
17 2017 Mixed-mode circuit simulation to characterize Ga2 O3 MOSFETs in different device structures I Lee, A Kumar, K Zeng, U Singisetti, X Yao
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
15 2017 Interface characterization of atomic layer deposited high-k on non-polar GaN Y Jia, K Zeng, U Singisetti
Journal of Applied Physics 122 (15), 2017
15 2017 Development of High-Voltage Vertical GaN PN Diodes RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020
13 2020 Study on Avalanche Uniformity in 1.2 KV GaN Vertical PIN Diode with Bevel Edge-Termination K Zeng, S Chowdhury, B Gunning, R Kaplar, T Anderson
2021 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2021
12 2021 Study of Avalanche Behavior in 3 kV GaN Vertical PN Diode Under UIS Stress for Edge-termination Optimization B Shankar, Z Bian, K Zeng, C Meng, RP Martinez, S Chowdhury, ...
2022 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-4, 2022
8 2022 
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)Email verificata su buffalo.edu