| Role of metal vacancies in the mechanism of thermal degradation of InGaN quantum wells J Smalc-Koziorowska, E Grzanka, A Lachowski, R Hrytsak, M Grabowski, ... ACS Applied Materials & Interfaces 13 (6), 7476-7484, 2021 | 26 | 2021 |
| The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs M Grabowski, E Grzanka, S Grzanka, A Lachowski, J Smalc-Koziorowska, ... Scientific Reports 11 (1), 2458, 2021 | 18 | 2021 |
| DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces R Hrytsak, P Kempisty, E Grzanka, M Leszczynski, M Sznajder Computational Materials Science 186, 110039, 2021 | 18 | 2021 |
| Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study R Hrytsak, P Kempisty, E Grzanka, M Leszczynski, M Sznajder Materials 15 (2), 478, 2022 | 12 | 2022 |
| Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers A Lachowski, E Grzanka, S Grzanka, R Czernecki, M Grabowski, ... Journal of Alloys and Compounds 900, 163519, 2022 | 9 | 2022 |
| Ab initio studies of early stages of AlN growth process on the oxygen-terminated diamond (111) surface M Sznajder, R Hrytsak Diamond and Related Materials 83, 94-103, 2018 | 8 | 2018 |
| Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system R Hrytsak, P Kempisty, M Leszczynski, M Sznajder New Journal of Physics 24 (12), 123007, 2022 | 2 | 2022 |
| Consequences of lateral and horizontal point defects diffusion through interfaces in green semiconductor lasers based on InAlGaN grown on substrates with different dislocation … E Grzanka, R Hrytsak, S Grzanka, A Lachowski, M Grabowski, L Marona, ... ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES 79, C882-C882, 2023 | | 2023 |
| DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces M Sznajder, R Hrytsak Materials 14 (21), 6532, 2021 | | 2021 |
| Clusters of Vacancies in Gallium Nitride Grown by Mocvd F Hájek, J Cizek, J Kuriplach, R Hrytsak, T Hubáček, F Dominec, ... | | |
Ewa GrzankaAssistant of Institute of High Pressure Physcis Polish Academy of SciencesEmail verificata su unipress.waw.pl
