| Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets AA Koroleva, AG Chernikova, SS Zarubin, E Korostylev, RR Khakimov, ... ACS omega 7 (50), 47084-47095, 2022 | 32 | 2022 |
| Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures AA Koroleva, AG Chernikova, AA Chouprik, ES Gornev, AS Slavich, ... ACS Applied Materials & Interfaces 12 (49), 55331-55341, 2020 | 25 | 2020 |
| Interface engineering for enhancement of the analog properties of W/WO3− x/HfO2/Pd resistance switched structures AA Koroleva, MG Kozodaev, YY Lebedinskii, AM Markeev Journal of Physics D: Applied Physics 54 (50), 504004, 2021 | 20 | 2021 |
| Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf0.5Zr0.5O2/TiN Capacitors RR Khakimov, AG Chernikova, Y Lebedinskii, AA Koroleva, AM Markeev ACS Applied Electronic Materials 3 (10), 4317-4327, 2021 | 19 | 2021 |
| CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems AA Koroleva, DS Kuzmichev, MG Kozodaev, IV Zabrosaev, EV Korostylev, ... Applied Physics Letters 122 (2), 2023 | 17 | 2023 |
| On the reliability of HZO-based ferroelectric capacitors: The cases of Ru and TiN electrodes RR Khakimov, AG Chernikova, AA Koroleva, AM Markeev Nanomaterials 12 (17), 3059, 2022 | 12 | 2022 |
| Field-Effect Transistor Based on 2D Microcrystalline MoS2 Film Grown by Sulfurization of Atomically Layer Deposited MoO3 IV Zabrosaev, MG Kozodaev, RI Romanov, AG Chernikova, P Mishra, ... Nanomaterials 12 (19), 3262, 2022 | 7 | 2022 |
| Forming-Free Nonfilamentary Resistive Switching in W/WO3 – x/HFO2/Pd Structures AA Koroleva, MG Kozodaev, YY Lebedinskii, AM Markeev Nanobiotechnology Reports 16 (6), 737-744, 2021 | 5 | 2021 |
| Analog memristive devices based on La2NiO4+ δ as synapses for spiking neural networks TK Khuu, A Koroleva, A Degreze, EI Vatajelu, G Lefèvre, C Jiménez, ... Journal of Physics D: Applied Physics 57 (10), 10LT01, 2023 | 4 | 2023 |
| Impact of the La2NiO4+δ Oxygen Content on the Synaptic Properties of the TiN/La2NiO4+δ/Pt Memristive Devices A Koroleva, T Khuu, C Magén, H Roussel, C Jiménez, C Ternon, ... Advanced Electronic Materials 10 (11), 2400096, 2024 | | 2024 |
| Tuning the synaptic properties of TiN/La2NiO4+ δ/Pt memristive devices by post-deposition annealing A Koroleva, C Magén, C Ternon, I Vatajelu, M Burriel Neuronics 2024, 2024 | | 2024 |
| Operando Spectroscopic Investigation of the Valence Change Mechanism in La2NiO4+ δ‐Based Memristive Devices TK Khuu, A Koroleva, C Moncasi, A Stangl, D Cooper, G Lefèvre, ... Advanced Electronic Materials, 2400313, 2024 | | 2024 |