Thomas Mikolajick

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Stefan SlesazeckNaMLab gGmbHEmail verificata su namlab.com
Walter M. WeberProfessor of Nanoelectronics at TU WienEmail verificata su tuwien.ac.at
Halid MulaosmanovicGlobalFoundries Inc.Email verificata su polimi.it
Jens TrommerNamlab gGmbHEmail verificata su namlab.com
Tony SchenkMember of Technical Staff & Lead of Cell Development at Ferroelectric Memory CompanyEmail verificata su ferroelectric-memory.com
Milan PesicApplied Materials Inc | MDLab/MDLSoft | Namlab | TU DresdenEmail verificata su amat.com
Dr. Stefan MuellerCTO at Ferroelectric Memory Company (FMC)Email verificata su ferroelectric-memory.com
Min Hyuk ParkSeoul National UniversityEmail verificata su snu.ac.kr
André HeinzigNaMLab, TU DresdenEmail verificata su namlab.com
Patrick D LomenzoNanoelectronic Materials Laboratory, NaMLabEmail verificata su namlab.com
Dominik MartinFerdinand-Braun-InstitutEmail verificata su alumni.tu-berlin.de
Terence MittmannNaMLab gGmbHEmail verificata su namlab.com
Monica MateranoR&D Engineer, EYE4NIREmail verificata su eye4nir.com
Evelyn T. Breyer↷Email verificata su tu-dresden.de
Benjamin MaxTU Dresden, Institute for Semiconductor and Microsystems, Chair of NanoelectronicsEmail verificata su tu-dresden.de
Matthias GrubeFraunhofer IPMSEmail verificata su ipms.fraunhofer.de
Franz P. G. FenglerNaMLab gGmbHEmail verificata su namlab.com
Jacob L. JonesMaterials Science & Engineering, North Carolina State UniversityEmail verificata su ncsu.edu
Sven BeyerGlobalfoundriesEmail verificata su globalfoundries.com
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityEmail verificata su snu.ac.kr

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Thomas Mikolajick

Scientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU Dresden

Email verificata su namlab.com - Home page

semiconductor materials and devices nonvolatile memory microelectronics ferroelectrics GaN


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Ferroelectricity in Simple Binary ZrO₂ and HfO₂ J Muller, TS Boscke, U Schroder, S Mueller, D Brauhaus, U Bottger, ... Nano letters 12 (8), 4318-4323, 2012	1763	2012
Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015	1137	2015
Incipient ferroelectricity in Al‐doped HfO2 thin films S Mueller, J Mueller, A Singh, S Riedel, J Sundqvist, U Schroeder, ... Advanced Functional Materials 22 (11), 2412-2417, 2012	883	2012
Physical Mechanisms behind the Field‐Cycling Behavior of HfO₂‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016	830	2016
Ferroelectricity in yttrium-doped hafnium oxide J Müller, U Schröder, TS Böscke, I Müller, U Böttger, L Wilde, J Sundqvist, ... Journal of Applied Physics 110 (11), 2011	710	2011
Ferroelectric Zr0. 5Hf0. 5O2 thin films for nonvolatile memory applications J Müller, TS Böscke, D Bräuhaus, U Schröder, U Böttger, J Sundqvist, ... Applied Physics Letters 99 (11), 2011	630	2011
Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 2015	589	2015
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013	557	2013
Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects J Müller, P Polakowski, S Mueller, T Mikolajick ECS Journal of Solid State Science and Technology 4 (5), N30-N35, 2015	546	2015
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017	529	2017
Review and perspective on ferroelectric HfO2-based thin films for memory applications MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang Mrs Communications 8 (3), 795-808, 2018	523	2018
2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022	500	2022
Reconfigurable silicon nanowire transistors A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber Nano letters 12 (1), 119-124, 2012	500	2012
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016	427	2016
Impact of different dopants on the switching properties of ferroelectric hafniumoxide U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ... Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014	415	2014
Unveiling the double-well energy landscape in a ferroelectric layer M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ... Nature 565 (7740), 464-467, 2019	408	2019
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO₂ Thin Films ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ... Advanced Electronic Materials 2 (9), 1600173, 2016	407	2016
The fundamentals and applications of ferroelectric HfO₂ U Schroeder, MH Park, T Mikolajick, CS Hwang Nature Reviews Materials 7 (8), 653-669, 2022	402	2022
Phase transitions in ferroelectric silicon doped hafnium oxide TS Böscke, S Teichert, D Bräuhaus, J Müller, U Schröder, U Böttger, ... Applied Physics Letters 99 (11), 2011	397	2011
The past, the present, and the future of ferroelectric memories T Mikolajick, U Schroeder, S Slesazeck IEEE Transactions on Electron Devices 67 (4), 1434-1443, 2020	392	2020

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