Silicon carbide: A unique platform for metal-oxide-semiconductor physics G Liu, BR Tuttle, S Dhar
Applied Physics Reviews 2 (2), 2015
317 2015 Enhanced Inversion Mobility on 4H-SiC G Liu, AC Ahyi, Y Xu, T Isaacs-Smith, YK Sharma, JR Williams, ...
IEEE Electron Device Letters 34 (2), 181-183, 2013
137 2013 High channel mobility 4H-SiC MOSFETs by antimony counter-doping A Modic, G Liu, AC Ahyi, Y Zhou, P Xu, MC Hamilton, JR Williams, ...
IEEE Electron Device Letters 35 (9), 894-896, 2014
76 2014 Wide-gap semiconducting graphene from nitrogen-seeded SiC F Wang, G Liu, S Rothwell, M Nevius, A Tejeda, A Taleb-Ibrahimi, ...
Nano letters 13 (10), 4827-4832, 2013
42 2013 Nitrogen Plasma Processing of SiO2 /4H-SiC Interfaces A Modic, YK Sharma, Y Xu, G Liu, AC Ahyi, JR Williams, LC Feldman, ...
Journal of electronic materials 43, 857-862, 2014
26 2014 Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery G Liu, Y Xu, C Xu, A Basile, F Wang, S Dhar, E Conrad, P Mooney, ...
Applied Surface Science 324, 30-34, 2015
19 2015 Channel mobility improvement in 4H-SiC MOSFETs using a combination of surface counter-doping and NO annealing AC Ahyi, A Modic, C Jiao, Y Zheng, G Liu, LC Feldman, S Dhar
Materials Science Forum 821, 693-696, 2015
13 2015 Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC F Wang, G Liu, S Rothwell, MS Nevius, C Mathieu, N Barrett, A Sala, ...
Carbon 82, 360-367, 2015
13 2015 Evidence for bandgap opening in buckled epitaxial graphene from ultrafast time-resolved terahertz spectroscopy MT Mihnev, F Wang, G Liu, S Rothwell, PI Cohen, LC Feldman, ...
Applied Physics Letters 107 (17), 2015
9 2015 Nanoscale Internal Fields in a Biased Graphene–Insulator–Semiconductor Structure S Rangan, M Kalyanikar, J Duan, G Liu, RA Bartynski, EY Andrei, ...
The journal of physical chemistry letters 7 (17), 3434-3439, 2016
8 2016 The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures L Liu, C Jiao, Y Xu, G Liu, LC Feldman, S Dhar
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 103-106, 2014
7 2014 Isotropic oxidation by plasma oxidation and investigation of RIE induced effects for development of 4H-SiC trench MOSFETs A Jayawardena, AC Ahyi, G Liu, RG Shaw, S Dhar
Materials Science Forum 924, 444-448, 2018
5 2018 Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS J Taillon, K Gaskell, G Liu, L Feldman, S Dahr, T Zheleva, A Lelis, ...
Microscopy and Microanalysis 21 (S3), 1537-1538, 2015
4 2015 Water absorption in thermally grown oxides on SiC and Si: bulk oxide and interface properties G Liu, C Xu, B Yakshinskiy, L Wielunski, T Gustafsson, J Bloch, S Dhar, ...
Applied Physics Letters 105 (19), 191602, 2014
3 2014 4H-Silicon Carbide MOSFET G Liu
Scholars' Press, 2014
3 * 2014 A Facile Access to Novel (5+ 5) Annellated Heterocycles: Synthesis of a Furopyrrole, an Imidazoimidazole and a Pyrroloimidazole P Zlatoidský, E Martinelli, E Svensson, A Pruvost
Synthesis 51 (18), 3491-3498, 2019
2 2019 Compact accurate scalable model for millimeter wave InP CPW with under-bridge G Liu, H Nakano, K Honjo
IEICE Electronics Express 5 (2), 74-80, 2008
2 2008 Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001),(0001¯), and (112¯) surfaces G Liu, C Xu, B Yakshinskiy, L Wielunski, T Gustafsson, J Bloch, S Dhar, ...
Applied Physics Letters 106 (12), 2015
1 2015 NVM Tunnel Oxide Integration in an Advanced BCD Node and its Impact on GOI G Liu, M Lipinski, S Hose, S Menon
2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2024
2024 Polysilicon Fuse Electrical Voiding Mechanism AP/DFM: Advanced Patterning/Design for Manufacturability G Liu, R Relos, B Janik, R Davis, T Myers, D Allman, J Hall, ...
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2020
2020 
Leonard FeldmanProfessor of Physics and Materials ScienceEmail verificata su rutgers.edu