Growth and self-organization of SiGe nanostructures JN Aqua, I Berbezier, L Favre, T Frisch, A Ronda
Physics Reports 522 (2), 59-189, 2013
258 2013 SiGe nanostructures I Berbezier, A Ronda
Surface Science Reports 64 (2), 47-98, 2009
187 2009 Ge dot organization on Si substrates patterned by focused ion beam A Karmous, A Cuenat, A Ronda, I Berbezier, S Atha, R Hull
Applied physics letters 85 (26), 6401-6403, 2004
126 2004 Formation of silicene nanosheets on graphite M De Crescenzi, I Berbezier, M Scarselli, P Castrucci, M Abbarchi, ...
Acs Nano 10 (12), 11163-11171, 2016
111 2016 Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitectures M Naffouti, R Backofen, M Salvalaglio, T Bottein, M Lodari, A Voigt, ...
Science advances 3 (11), eaao1472, 2017
110 2017 Wafer Scale Formation of Monocrystalline Silicon-Based Mie Resonators via Silicon-on-Insulator Dewetting M Abbarchi, M Naffouti, B Vial, A Benkouider, L Lermusiaux, L Favre, ...
ACS nano 8 (11), 11181-11190, 2014
110 2014 A microstructural study of porous silicon I Berbezier, A Halimaoui
Journal of applied physics 74 (9), 5421-5425, 1993
110 1993 All-dielectric color filters using SiGe-based Mie resonator arrays T Wood, M Naffouti, J Berthelot, T David, JB Claude, L Métayer, ...
ACS photonics 4 (4), 873-883, 2017
103 2017 Surface electron‐diffraction patterns of β‐FeSi2 films epitaxially grown on silicon JE Mahan, VL Thanh, J Chevrier, I Berbezier, J Derrien, RG Long
Journal of applied physics 74 (3), 1747-1761, 1993
103 1993 Formation and ordering of Ge nanocrystals on A Karmous, I Berbezier, A Ronda
Physical Review B—Condensed Matter and Materials Physics 73 (7), 075323, 2006
96 2006 SiGe nanostructures: new insights into growth processes I Berbezier, A Ronda, A Portavoce
Journal of Physics: Condensed Matter 14 (35), 8283, 2002
93 2002 Sub-micrometre luminescent porous silicon structures using lithographically patterned substrates AG Nassiopoulos, S Grigoropoulos, L Canham, A Halimaoui, I Berbezier, ...
Thin Solid Films 255 (1-2), 329-333, 1995
84 1995 Sb-surfactant-mediated growth of Si and Ge nanostructures A Portavoce, I Berbezier, A Ronda
Physical Review B 69 (15), 155416, 2004
78 2004 Porous silicon: material properties, visible photo-and electroluminescence G Bomchil, A Halimaoui, I Sagnes, PA Badoz, I Berbezier, P Perret, ...
Applied surface science 65, 394-407, 1993
77 1993 Self-assembly and ordering mechanisms of Ge islands on prepatterned Si (001) A Pascale, I Berbezier, A Ronda, PC Kelires
Physical Review B—Condensed Matter and Materials Physics 77 (7), 075311, 2008
68 2008 Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities I Berbezier, A Ronda, A Portavoce, N Motta
Applied Physics Letters 83 (23), 4833-4835, 2003
62 2003 van der Waals heteroepitaxy of germanene islands on graphite L Persichetti, F Jardali, H Vach, A Sgarlata, I Berbezier, M De Crescenzi, ...
The journal of physical chemistry letters 7 (16), 3246-3251, 2016
60 2016 diluted magnetic semiconductor epitaxially grown on Ge(001): Influence of nanoscopic clusters on the electronic and magnetic propertiesP De Padova, JP Ayoub, I Berbezier, P Perfetti, C Quaresima, AM Testa, ...
Physical Review B—Condensed Matter and Materials Physics 77 (4), 045203, 2008
58 2008 Selective and epitaxial deposition of β‐FeSi2 on silicon by rapid thermal processing‐chemical vapor deposition using a solid iron source JL Regolini, F Trincat, I Berbezier, Y Shapira
Applied physics letters 60 (8), 956-958, 1992
57 1992 Synthesis and properties of epitaxial semiconducting silicides J Derrien, J Chevrier, I Berbezier, C Giannini, S Lagomarsino, ...
Applied surface science 73, 90-101, 1993
55 1993