Segui
Hang-Ming Zhang
Hang-Ming Zhang
Altri nomi张 航铭, Hangming Zhang
Email verificata su stu.xjtu.edu.cn
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Citata da
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Anno
Metavalent Bonding in Layered Phase‐Change Memory Materials
W Zhang, H Zhang, S Sun, X Wang, Z Lu, X Wang, JJ Wang, C Jia, ...
Advanced Science 10 (15), 2300901, 2023
232023
Multiscale simulations of growth-dominated Sb2Te phase-change material for non-volatile photonic applications
XD Wang, W Zhou, H Zhang, S Ahmed, T Huang, R Mazzarello, E Ma, ...
npj Computational Materials 9 (1), 136, 2023
122023
Designing Inorganic Semiconductors with Cold‐Rolling Processability
XD Wang, J Tan, J Ouyang, HM Zhang, JJ Wang, Y Wang, VL Deringer, ...
Advanced Science 9 (30), 2203776, 2022
122022
Designing Sb2Te3 heterophase homostructure
X Wang, H Zhang, X Wang, J Wang, E Ma, W Zhang
Chin. Sci. Bull 67 (22), 2662-2671, 2022
22022
Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)
W Zhang, H Zhang, S Sun, X Wang, Z Lu, X Wang, JJ Wang, C Jia, ...
Advanced Science 10 (15), 2023
12023
In‐Plane Twinning Defects in Hexagonal GeSb2Te4
JJ Wang, HM Zhang, XD Wang, L Lu, C Jia, W Zhang, R Mazzarello
Advanced Materials Technologies 7 (8), 2200214, 2022
12022
Deformable monoclinic gallium telluride with high in-plane structural anisotropy
J Tan, H Zhang, X Wang, Y Wang, JJ Wang, H Zhang, E Ma, W Zhang
Materials Today 80, 250-261, 2024
2024
Homopolar Chemical Bonds Induce In‐Plane Anisotropy in Layered Semiconductors
J Tan, JJ Wang, HM Zhang, HY Zhang, H Li, Y Wang, Y Zhou, ...
Small Science, 2400226, 2024
2024
Designing Inorganic Semiconductors with Cold‐Rolling Processability (Adv. Sci. 30/2022)
XD Wang, J Tan, J Ouyang, HM Zhang, JJ Wang, Y Wang, VL Deringer, ...
Advanced Science 9 (30), 2022
2022
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