Computational study of borophene with line defects as sensors for nitrogen-containing gas molecules X Yu, F Chen, Z Yu, Y Li ACS Applied Nano Materials 3 (10), 9961-9968, 2020 | 37 | 2020 |
Observation of coexisting Dirac bands and moiré flat bands in magic‐angle twisted trilayer graphene Y Li, S Zhang, F Chen, L Wei, Z Zhang, H Xiao, H Gao, M Chen, S Liang, ... Advanced Materials 34 (42), 2205996, 2022 | 29 | 2022 |
Tunable quantum criticalities in an isospin extended Hubbard model simulator Q Li, B Cheng, M Chen, B Xie, Y Xie, P Wang, F Chen, Z Liu, K Watanabe, ... Nature 609 (7927), 479-484, 2022 | 28 | 2022 |
Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing M Chen, Y Xie, B Cheng, Z Yang, XZ Li, F Chen, Q Li, J Xie, K Watanabe, ... Nature Nanotechnology 19 (7), 962-969, 2024 | 11 | 2024 |
Moiré heterostructures: highly tunable platforms for quantum simulation and future computing M Chen, F Chen, B Cheng, SJ Liang, F Miao Journal of Semiconductors 44 (1), 010301-1-010301-5, 2023 | 9 | 2023 |
On-device phase engineering X Liu, J Shan, T Cao, L Zhu, J Ma, G Wang, Z Shi, Q Yang, M Ma, Z Liu, ... Nature Materials, 1-7, 2024 | 6 | 2024 |
Anisotropic metal–insulator transition in strained VO2 (B) single crystal Z Ma, S Yan, Z Liu, T Xu, F Chen, S Chen, T Cao, L Sun, B Cheng, ... Chinese Physics B 33 (6), 067103, 2024 | 1 | 2024 |
Enhanced robustness of half-metallicity in VBr 3 nanowires by strains and transition metal doping X Yu, F Chen, Z Yu, Y Li Physical Chemistry Chemical Physics 22 (42), 24455-24461, 2020 | 1 | 2020 |
Skin‐Inspired in‐Sensor Encoding of Strain Vector Using Tunable Quantum Geometry Z Liu, J Shi, J Cao, Z Ma, Z Yang, Y Cui, L Wang, Y Dai, M Chen, P Wang, ... Advanced Functional Materials, 2416204, 2025 | | 2025 |
Ultrasensitive mechanical sensor using tunable ordered array of metallic and insulating states in vanadium dioxide Z Ma, S Yan, F Chen, Y Dai, Z Liu, K Xu, T Xu, Z Tong, M Chen, L Wang, ... Chinese Physics Letters, 2024 | | 2024 |
Tunable moir\'e bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating H Xiao, H Gao, M Li, F Chen, Q Li, Y Li, M Wang, F Zhu, L Yang, F Miao, ... arXiv preprint arXiv:2405.11893, 2024 | | 2024 |