Segui
Fanqiang Chen
Fanqiang Chen
Email verificata su smail.nju.edu.cn
Titolo
Citata da
Citata da
Anno
Computational study of borophene with line defects as sensors for nitrogen-containing gas molecules
X Yu, F Chen, Z Yu, Y Li
ACS Applied Nano Materials 3 (10), 9961-9968, 2020
372020
Observation of coexisting Dirac bands and moiré flat bands in magic‐angle twisted trilayer graphene
Y Li, S Zhang, F Chen, L Wei, Z Zhang, H Xiao, H Gao, M Chen, S Liang, ...
Advanced Materials 34 (42), 2205996, 2022
292022
Tunable quantum criticalities in an isospin extended Hubbard model simulator
Q Li, B Cheng, M Chen, B Xie, Y Xie, P Wang, F Chen, Z Liu, K Watanabe, ...
Nature 609 (7927), 479-484, 2022
282022
Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing
M Chen, Y Xie, B Cheng, Z Yang, XZ Li, F Chen, Q Li, J Xie, K Watanabe, ...
Nature Nanotechnology 19 (7), 962-969, 2024
112024
Moiré heterostructures: highly tunable platforms for quantum simulation and future computing
M Chen, F Chen, B Cheng, SJ Liang, F Miao
Journal of Semiconductors 44 (1), 010301-1-010301-5, 2023
92023
On-device phase engineering
X Liu, J Shan, T Cao, L Zhu, J Ma, G Wang, Z Shi, Q Yang, M Ma, Z Liu, ...
Nature Materials, 1-7, 2024
62024
Anisotropic metal–insulator transition in strained VO2 (B) single crystal
Z Ma, S Yan, Z Liu, T Xu, F Chen, S Chen, T Cao, L Sun, B Cheng, ...
Chinese Physics B 33 (6), 067103, 2024
12024
Enhanced robustness of half-metallicity in VBr 3 nanowires by strains and transition metal doping
X Yu, F Chen, Z Yu, Y Li
Physical Chemistry Chemical Physics 22 (42), 24455-24461, 2020
12020
Skin‐Inspired in‐Sensor Encoding of Strain Vector Using Tunable Quantum Geometry
Z Liu, J Shi, J Cao, Z Ma, Z Yang, Y Cui, L Wang, Y Dai, M Chen, P Wang, ...
Advanced Functional Materials, 2416204, 2025
2025
Ultrasensitive mechanical sensor using tunable ordered array of metallic and insulating states in vanadium dioxide
Z Ma, S Yan, F Chen, Y Dai, Z Liu, K Xu, T Xu, Z Tong, M Chen, L Wang, ...
Chinese Physics Letters, 2024
2024
Tunable moir\'e bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating
H Xiao, H Gao, M Li, F Chen, Q Li, Y Li, M Wang, F Zhu, L Yang, F Miao, ...
arXiv preprint arXiv:2405.11893, 2024
2024
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