Local Strain Engineering in Atomically Thin MoS2 A Castellanos-Gomez, R Roldán, E Cappelluti, M Buscema, F Guinea, ...
Nano letters 13 (11), 5361-5366, 2013
1401 2013 Strain engineering in semiconducting two-dimensional crystals R Roldán, A Castellanos-Gomez, E Cappelluti, F Guinea
Journal of Physics: Condensed Matter 27 (31), 313201, 2015
670 2015 Plasmons and screening in monolayer and multilayer black phosphorus T Low, R Roldán, H Wang, F Xia, P Avouris, LM Moreno, F Guinea
Physical review letters 113 (10), 106802, 2014
636 2014 Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS E Cappelluti, R Roldán, JA Silva-Guillén, P Ordejón, F Guinea
Physical Review B—Condensed Matter and Materials Physics 88 (7), 075409, 2013
515 2013 Novel effects of strains in graphene and other two dimensional materials B Amorim, A Cortijo, F De Juan, AG Grushin, F Guinea, A Gutiérrez-Rubio, ...
Physics Reports 617, 1-54, 2016
409 2016 Electronic properties of single‐layer and multilayer transition metal dichalcogenides MX 2 (M = Mo, W and X = S, Se) R Roldán, JA Silva‐Guillén, MP López‐Sancho, F Guinea, E Cappelluti, ...
Annalen der Physik 526 (9-10), 347-357, 2014
274 2014 Strong modulation of optical properties in black phosphorus through strain-engineered rippling J Quereda, P San-Jose, V Parente, L Vaquero-Garzon, ...
Nano letters 16 (5), 2931-2937, 2016
269 2016 Spin-orbit-mediated spin relaxation in monolayer MoS H Ochoa, R Roldán
Physical Review B—Condensed Matter and Materials Physics 87 (24), 245421, 2013
203 2013 Theory of strain in single-layer transition metal dichalcogenides H Rostami, R Roldán, E Cappelluti, R Asgari, F Guinea
Physical Review B 92 (19), 195402, 2015
192 2015 Landau level spectrum of ABA - and ABC -stacked trilayer graphene S Yuan, R Roldán, MI Katsnelson
Physical Review B—Condensed Matter and Materials Physics 84 (12), 125455, 2011
189 2011 Dielectric screening in atomically thin boron nitride nanosheets LH Li, EJG Santos, T Xing, E Cappelluti, R Roldán, Y Chen, K Watanabe, ...
Nano letters 15 (1), 218-223, 2015
183 2015 Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling A Castellanos-Gomez, E Cappelluti, R Roldán, N Agraït, F Guinea, ...
arXiv preprint arXiv:1211.0574, 2012
175 2012 Theory of 2D crystals: graphene and beyond R Roldán, L Chirolli, E Prada, JA Silva-Guillén, P San-Jose, F Guinea
Chemical Society Reviews 46 (15), 4387-4399, 2017
170 2017 Effect of point defects on the optical and transport properties of S Yuan, R Roldán, MI Katsnelson, F Guinea
Physical Review B 90 (4), 041402, 2014
154 2014 Piezoelectricity in monolayer hexagonal boron nitride P Ares, T Cea, M Holwill, YB Wang, R Roldán, F Guinea, DV Andreeva, ...
Advanced Materials 32 (1), 1905504, 2020
151 2020 Collective modes of doped graphene and a standard two-dimensional electron gas in a strong magnetic field: Linear magnetoplasmons versus magnetoexcitons R Roldán, JN Fuchs, MO Goerbig
Physical Review B—Condensed Matter and Materials Physics 80 (8), 085408, 2009
137 2009 Interactions and superconductivity in heavily doped MoS R Roldán, E Cappelluti, F Guinea
Physical Review B—Condensed Matter and Materials Physics 88 (5), 054515, 2013
131 2013 How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin–Orbit Splitting, and Strain B Schuler, JH Lee, C Kastl, KA Cochrane, CT Chen, S Refaely-Abramson, ...
ACS nano 13 (9), 10520-10534, 2019
129 2019 Suppression of anharmonicities in crystalline membranes by external strain R Roldán, A Fasolino, KV Zakharchenko, MI Katsnelson
Physical Review B—Condensed Matter and Materials Physics 83 (17), 174104, 2011
122 2011 Momentum dependence of spin–orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides R Roldan, MP López-Sancho, F Guinea, E Cappelluti, JA Silva-Guillén, ...
2D Materials 1 (3), 034003, 2014
113 2014 
Francisco GuineaSenior Researcher, Imdea NanoscienceEmail verificata su imdea.org