Two-Dimensional MoSi2 N4 : An Excellent 2-D Semiconductor for Field-Effect Transistors K Nandan, B Ghosh, A Agarwal, S Bhowmick, YS Chauhan
IEEE Transactions on Electron Devices 69 (1), 406-413, 2021
49 2021 Designing Power-Efficient Transistors Using Narrow-Bandwidth Materials from the K Nandan, S Bhowmick, YS Chauhan, A Agarwal
Physical Review Applied 19 (6), 064058, 2023
14 2023 Two-dimensional semiconductors based Field-Effect Transistors: Review of Major Milestones and Challenges K Nandan, A Agarwal, S Bhowmick, YS Chauhan
Frontiers in Electronics 4, 1277927, 2023
12 2023 Di-Metal Chalcogenides: A New Family of Promising 2-D Semiconductors for High-Performance Transistors A Naseer, K Nandan, A Agarwal, S Bhowmick, YS Chauhan
IEEE Transactions on Electron Devices 70 (5), 2445-2452, 2023
11 2023 Performance Investigation of p-FETs Based on Highly Air-Stable Monolayer Pentagonal PdSe2 K Nandan, A Agarwal, S Bhowmick, YS Chauhan
IEEE Transactions on Electron Devices 68 (12), 6551-6557, 2021
11 2021 Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect K Nandan, C Yadav, P Rastogi, A Toral-Lopez, A Marin-Sanchez, ...
IEEE Journal of the Electron Devices Society 8, 1177-1183, 2020
10 2020 Performance Evaluation of Monolayer ZrS A Naseer, K Nandan, A Agarwal, S Bhowmick, YS Chauhan
IEEE Transactions on Electron Devices, 2023
8 2023 Field-Effect Transistors Based on Two-dimensional Materials K Nandan, A Naseer, YS Chauhan
Transactions of the Indian National Academy of Engineering 8 (1), 1-14, 2023
6 2023 Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2 FETs K Nandan, C Yadav, P Rastogi, A Toral-Lopez, A Marin-Sanchez, ...
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
5 2020 Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs CK Dabhi, D Nandi, K Nandan, D Rajasekharan, G Pahwa, N Karumuri, ...
IEEE Transactions on Electron Devices, 2024
2 2024 A Physics-Based Compact Model for Silicon Cold-Source Transistors A Kar, K Nandan, YS Chauhan
IEEE Transactions on Electron Devices 70 (4), 1580-1588, 2023
2 2023 Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 monolayer series K Nandan, S Bhowmick, YS Chauhan, A Agarwal
arXiv preprint arXiv:2211.09540, 2022
1 2022 PdSe2 based field-effect transistors K Nandan, A Agarwal, S Bhowmick, YS Chauhan
arXiv preprint arXiv:2201.03493, 2022
1 2022 Transistors Based on Novel 2-D Monolayer Semiconductors Bi K Nandan, A Naseer, A Agarwal, S Bhowmick, YS Chauhan
IEEE Transactions on Electron Devices, 2024
2024 Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling K Nandan, A Naseer, A Agarwal, S Bhowmick, YS Chauhan
arXiv preprint arXiv:2412.01016, 2024
2024 Hybrid FETs Based on Monolayer ZrI2 for Energy-Efficient Logic Applications A Naseer, K Nandan, A Agarwal, S Bhowmick, YS Chauhan
2024 Device Research Conference (DRC), 1-2, 2024
2024 Emerging Low-Dimensional Materials and Devices for Continued CMOS Scaling K Nandan
IIT Kanpur, Kanpur, 208016, India, Source: https://www.researchgate.net …, 2023
2023 Extremely Scaled Silicon Nanosheet Transistors K Nandan
Indian Institute of Technology Kanpur, 2023
2023 Extremely Scaled Silicon Nanosheet Transistors K Nandan, A Agarwal, S Bhowmick, YS Chauhan
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022
2022 Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors K Nandan, B Ghosh, A Agarwal, S Bhowmick, YS Chauhan
arXiv preprint arXiv:2201.10278, 2022
2022 
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT KanpurEmail verificata su iitk.ac.in
