| Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si (1 0 0) Schottky contacts Ş Karataş, Ş Altındal, A Türüt, A Özmen Applied surface science 217 (1-4), 250-260, 2003 | 314 | 2003 |
| Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements Ş Karataş, Ş Altındal, A Türüt, M Çakar Physica B: Condensed Matter 392 (1-2), 43-50, 2007 | 153 | 2007 |
| The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy Ş Karataş, A Türüt Vacuum 74 (1), 45-53, 2004 | 139 | 2004 |
| Current transport in Zn/p-Si (1 0 0) Schottky barrier diodes at high temperatures Ş Karataş, Ş Altındal, M Çakar Physica B: Condensed Matter 357 (3-4), 386-397, 2005 | 126 | 2005 |
| The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures O Pakma, N Serin, T Serin, Ş Altındal Journal of Applied Physics 104 (1), 2008 | 121 | 2008 |
| Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101∕ n-Si and Sn/rhodamine-101∕ p-Si Schottky barrier diodes M Çakar, N Yıldırım, Ş Karataş, C Temirci, A Türüt Journal of applied physics 100 (7), 2006 | 119 | 2006 |
| Analysis of I–V characteristics on Au/n-type GaAs Schottky structures in wide temperature range Ş Karataş, Ş Altındal Materials Science and Engineering: B 122 (2), 133-139, 2005 | 114 | 2005 |
| İnternet destekli yapıcı öğrenme ortamları E Kılıç, Ş Karadeniz, S Karataş Gazi Üniversitesi Gazi Eğitim Fakültesi Dergisi 23 (2), 2003 | 91* | 2003 |
| Electrical properties of Sn/p-Si (MS) Schottky barrier diodes to be exposed to 60Co γ-ray source Ş Karataş, A Türüt Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006 | 84 | 2006 |
| Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode Ş Karataş, N Yildirim, A Türüt Superlattices and Microstructures 64, 483-494, 2013 | 83 | 2013 |
| The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes Ş Karataş, A Türüt Physica B: Condensed Matter 381 (1-2), 199-203, 2006 | 79 | 2006 |
| Effects of 60Co γ-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures Ş Karataş, A Türüt, Ş Altındal Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005 | 72 | 2005 |
| Effect of high hydrostatic pressure on Staphylococcus aureus in milk O Erkmen, Ş Karataş Journal of Food Engineering 33 (3-4), 257-262, 1997 | 70 | 1997 |
| Effect of series resistance on the electrical characteristics and interface state energy distributions of Sn/p-Si (MS) Schottky diodes Ş Karataş Microelectronic engineering 87 (10), 1935-1940, 2010 | 68 | 2010 |
| Capacitance–voltage and conductance–voltage characteristics of Ag/n-CdO/p-Si MIS structure prepared by sol–gel method S Karataş, F Yakuphanoglu, FM Amanullah Journal of Physics and Chemistry of Solids 73 (1), 46-51, 2012 | 67 | 2012 |
| Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si Ö Demircioglu, Ş Karataş, N Yıldırım, ÖF Bakkaloglu, A Türüt Journal of Alloys and Compounds 509 (22), 6433-6439, 2011 | 65 | 2011 |
| Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor İ Karteri, Ş Karataş, F Yakuphanoğlu Applied Surface Science 318, 74-78, 2014 | 63 | 2014 |
| Temperature dependence of the current–voltage characteristics of the Al/Rhodamine-101/p-Si (1 0 0) contacts Ş Karataş, C Temirci, M Çakar, A Türüt Applied surface science 252 (6), 2209-2216, 2006 | 61 | 2006 |
| Effects of illumination on electrical parameters of Ag/n-CdO/p-Si diode Ş Karataş, F Yakuphanoğlu Materials Chemistry and Physics 138 (1), 72-77, 2013 | 55 | 2013 |
| The frequency-dependent electrical characteristics of interfaces in the Sn/p-Si metal semiconductor structures Ş Karataş, A Türüt Microelectronics Reliability 50 (3), 351-355, 2010 | 54 | 2010 |