Infrared and Raman spectra of the IV-VI compounds SnS and SnSe HR Chandrasekhar, RG Humphreys, U Zwick, M Cardona
Physical Review B 15 (4), 2177, 1977
600 1977 Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition YR Ryu, S Zhu, JD Budai, HR Chandrasekhar, PF Miceli, HW White
Journal of Applied Physics 88 (1), 201-204, 2000
350 2000 High-pressure studies of GaAs- As quantum wells of widths 26 to 150 Å U Venkateswaran, M Chandrasekhar, HR Chandrasekhar, BA Vojak, ...
Physical Review B 33 (12), 8416, 1986
208 1986 Temperature-dependent photoluminescence of organic semiconductors with varying backbone conformation S Guha, JD Rice, YT Yau, CM Martin, M Chandrasekhar, ...
Physical Review B 67 (12), 125204, 2003
162 * 2003 Planarity of para Hexaphenyl S Guha, W Graupner, R Resel, M Chandrasekhar, HR Chandrasekhar, ...
Physical review letters 82 (18), 3625, 1999
129 1999 Study of the localized vibrations of boron in heavily doped Si M Chandrasekhar, HR Chandrasekhar, M Grimsditch, M Cardona
Physical Review B 22 (10), 4825, 1980
108 1980 Determination of the deformation-potential constant of the conduction band of silicon from the piezospectroscopy of donors VJ Tekippe, HR Chandrasekhar, P Fisher, AK Ramdas
Physical Review B 6 (6), 2348, 1972
104 1972 Nonparabolicity of the conduction band and the coupled plasmon-phonon modes in n-GaAs HR Chandrasekhar, AK Ramdas
Physical Review B 21 (4), 1511, 1980
100 1980 Pressure tuning of strains in semiconductor heterostructures:(ZnSe epilayer)/(GaAs epilayer) B Rockwell, HR Chandrasekhar, M Chandrasekhar, AK Ramdas, ...
Physical Review B 44 (20), 11307, 1991
81 1991 Raman scattering and infrared reflectivity in GeSe HR Chandrasekhar, U Zwick
Solid State Communications 18 (11-12), 1509-1513, 1976
81 1976 Photoluminescence studies of a GaAs- As superlattice at 8– 300 K under hydrostatic pressure (0– 70 kbar) U Venkateswaran, M Chandrasekhar, HR Chandrasekhar, T Wolfram, ...
Physical Review B 31 (6), 4106, 1985
80 1985 Quantitative piezospectroscopy of the ground and excited states of acceptors in silicon HR Chandrasekhar, P Fisher, AK Ramdas, S Rodriguez
Physical Review B 8 (8), 3836, 1973
67 1973 Luminescence and Raman spectra of CdS under hydrostatic pressure U Venkateswaran, M Chandrasekhar, HR Chandrasekhar
Physical Review B 30 (6), 3316, 1984
66 1984 Long-wavelength phonons in mixed-valence semiconductor Sn II Sn IV S 3 HR Chandrasekhar, DG Mead
Physical Review B 19 (2), 932, 1979
55 1979 Infrared and Raman spectra and lattice dynamics of the superionic conductor Li 3 N HR Chandrasekhar, G Bhattacharya, R Migoni, H Bilz
Physical Review B 17 (2), 884, 1978
55 1978 Primary optical excitations and excited-state interaction energies in sexithiophene MA Loi, C Martin, HR Chandrasekhar, M Chandrasekhar, W Graupner, ...
Physical Review B 66 (11), 113102, 2002
54 2002 Tuning Intermolecular Interactions: A Study of the Structural and Vibrational Properties of p -Hexaphenyl under Pressure S Guha, W Graupner, R Resel, M Chandrasekhar, HR Chandrasekhar, ...
The Journal of Physical Chemistry A 105 (25), 6203-6211, 2001
51 2001 Geometry-dependent electronic properties of highly fluorescent conjugated molecules SC Yang, W Graupner, S Guha, P Puschnig, C Martin, HR Chandrasekhar, ...
Physical review letters 85 (11), 2388, 2000
51 2000 Pressure dependence of the Raman spectra of the IV-VI layer compounds GeS and GeSe HR Chandrasekhar, RG Humphreys, M Cardona
Physical Review B 16 (6), 2981, 1977
50 1977 Photoluminescence of short-period GaAs/AlAs superlattices: A hydrostatic pressure and temperature study S Guha, Q Cai, M Chandrasekhar, HR Chandrasekhar, H Kim, ...
Physical Review B 58 (11), 7222, 1998
45 1998