| Intrinsic program instability in HfO2 RRAM and consequences on program algorithms A Fantini, G Gorine, R Degraeve, L Goux, CY Chen, A Redolfi, S Clima, ... 2015 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2015 | 89 | 2015 |
| Endurance degradation mechanisms in TiN\ Ta2O5\ Ta resistive random-access memory cells CY Chen, L Goux, A Fantini, S Clima, R Degraeve, A Redolfi, YY Chen, ... Applied Physics Letters 106 (5), 053501, 2015 | 53 | 2015 |
| Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device L Goux, A Fantini, A Redolfi, CY Chen, FF Shi, R Degraeve, YY Chen, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 49 | 2014 |
| First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device S Clima, YY Chen, CY Chen, L Goux, B Govoreanu, R Degraeve, ... Journal of Applied Physics 119 (22), 225107, 2016 | 47 | 2016 |
| Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells CY Chen, L Goux, A Fantini, A Redolfi, S Clima, R Degraeve, YY Chen, ... International Electron Devices Meeting-IEDM, 355-358, 2014 | 46 | 2014 |
| Transient Thermometry and High-Resolution Transmission Electron Microscopy Analysis of Filamentary Resistive Switches J Kwon, AA Sharma, CY Chen, A Fantini, M Jurczak, AA Herzing, JA Bain, ... ACS Applied Materials & Interfaces 8 (31), 20176-20184, 2016 | 43 | 2016 |
| Programming-conditions solutions towards suppression of retention tails of scaled oxide-based RRAM CY Chen, A Fantini, L Goux, R Degraeve, S Clima, A Redolfi, ... IEEE International Electron Devices Meeting-IEDM, 261-264, 2015 | 28 | 2015 |
| Electron beam induced current in InSb-InAs nanowire type-III heterostructures CY Chen, A Shik, A Pitanti, A Tredicucci, D Ercolani, L Sorba, F Beltram, ... Applied Physics Letters 101 (6), 063116, 2012 | 27 | 2012 |
| Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires J Salfi, C Stewart, SV Nair, CY Chen, S Yongshun, E Rusli, FK Lin, M Yu, ... New Journal of Physics 15 (9), 093029, 2013 | 20* | 2013 |
| Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM L Goux, A Belmonte, U Celano, J Woo, S Folkersma, CY Chen, A Redolfi, ... VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2016 …, 2016 | 18 | 2016 |
| Quantitative endurance failure model for filamentary RRAM R Degraeve, A Fantini, P Roussel, L Goux, A Costantino, CY Chen, ... 2015 Symposium on VLSI Technology (VLSI Technology), T188-T189, 2015 | 17 | 2015 |
| Statistical investigation of the impact of program history and oxide-metal interface on OxRRAM retention CY Chen, A Fantini, R Degraeve, A Redolfi, G Groeseneken, L Goux, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2016 | 14 | 2016 |
| Novel Flexible and Cost-Effective Retention Assessment Method for TMO-based RRAM CY Chen, A Fantini, L Goux, G Gorine, A Redolfi, G Groeseneken, ... IEEE Electron Device Letters, 2016 | 14 | 2016 |
| Quantitative Model for Post-program Instabilities in Filamentary RRAM R Degraeve, A Fantini, G Gorine, P Roussel, S Clima, CY Chen, ... IEEE International Reliability Physics Symposium (IRPS) 2016, 6C.1, 2016 | 14 | 2016 |
| Stack optimization of oxide-based RRAM for fast write speed (< 1μs) at low operating current (< 10μA) CY Chen, L Goux, A Fantini, R Degraeve, A Redolfi, G Groeseneken, ... Solid-State Electronics 125, 198-203, 2016 | 12 | 2016 |
| Doped Gd-O based RRAM for embedded application CY Chen, L Goux, A Fantini, A Redolfi, G Groeseneken, M Jurczak 2016 IEEE 8th International Memory Workshop (IMW), 1-4, 2016 | 12 | 2016 |
| Low‐current operation of novel Gd2O3‐based RRAM cells with large memory window CY Chen, L Goux, A Fantini, A Redolfi, G Groeseneken, M Jurczak physica status solidi (a) 213 (2), 320-324, 2016 | 8 | 2016 |
| Quantitative retention model for filamentary oxide-based resistive RAM R Degraeve, CY Chen, U Celano, A Fantini, L Goux, D Linten, GS Kar Microelectronic Engineering 178, 38-41, 2017 | 7 | 2017 |
| Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions A Shik, CY Chen, A Pitanti, A Tredicucci, D Ercolani, L Sorba, F Beltram, ... Journal of Applied Physics 113 (10), 104307, 2013 | 5 | 2013 |
| Oxygen chemical potential profile optimization for fast low current (<10uA) resistive switching in oxide-based RRAM CY Chen, L Goux, A Fantini, A Redolfi, G Groeseneken, M Jurczak 2016 International Symposium on VLSI Technology, Systems and Application …, 2016 | 4 | 2016 |
Bogdan GovoreanuPrincipal Member of Technical Staff, imecEmail verificata su imec.be