Saurabh V. Suryavanshi

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Eric PopPease-Ye Professor of Electrical Engineering, MSE, AP at Stanford & SLACEmail verificata su stanford.edu
Connor J. McClellanStanford UniversityEmail verificata su stanford.edu
Eilam YalonTechnion, Israel Institute of TechnologyEmail verificata su technion.ac.il
Alexander J GabourieDeepSim, Inc.Email verificata su deepsim.io
Dr. Miguel Muñoz Rojo - ERC granteeTenured permanent researcher (CSIC) & Associate Prof. (University of Twente)Email verificata su csic.es
Amir Barati FarimaniRussell V. Trader Associate Professor at Carnegie Mellon UniversityEmail verificata su stanford.edu
Feng XiongAssociate Professor, Department of Electrical and Computer Engineering, University of PittsburghEmail verificata su pitt.edu
Christopher M. NeumannIntelEmail verificata su intel.com
Runjie (Lily) XuStanford UniversityEmail verificata su apple.com
Lucian ShifrenEmail verificata su shifren.com
Aditya SoodAssistant Professor, Princeton UniversityEmail verificata su stanford.edu
Kenneth E. GoodsonStanford Mechanical Engineering, Davies Provostial ProfessorEmail verificata su stanford.edu
Tony F HeinzDepts. of Applied Physics, Photon Science, and, by courtesy, of Electrical Eng., SLAC, StanfordEmail verificata su stanford.edu
Burak AslanAssistant Professor, Bogazici UniversityEmail verificata su boun.edu.tr
Sanchit DeshmukhPhD, Stanford UniversityEmail verificata su alumni.stanford.edu
Sam VaziriStanford UniversityEmail verificata su stanford.edu
Greg YericCerfe LabsEmail verificata su cerfelabs.com
Ankush AgarwalFacebookEmail verificata su fb.com
Michal Jakub MleczkoDevice Engineer, IntelEmail verificata su stanford.edu
Dan DessauUniversity of ColoradoEmail verificata su Colorado.edu

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Saurabh V. Suryavanshi

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Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Energy Dissipation in Monolayer MoS₂ Electronics E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ... Nano letters 17 (6), 3429-3433, 2017	239	2017
Low Variability in Synthetic Monolayer MoS₂ Devices KKH Smithe, SV Suryavanshi, M Muñoz Rojo, AD Tedjarati, E Pop ACS nano 11 (8), 8456-8463, 2017	222	2017
High Current Density in Monolayer MoS₂ Doped by AlO_x CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop ACS nano 15 (1), 1587-1596, 2021	209	2021
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices KKH Smithe, CD English, SV Suryavanshi, E Pop 2D Materials 4 (1), 011009, 2016	191	2016
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS₂ by Raman Thermometry E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ... ACS applied materials & interfaces 9 (49), 43013-43020, 2017	185	2017
High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS₂ KKH Smithe, CD English, SV Suryavanshi, E Pop Nano letters 18 (7), 4516-4522, 2018	160	2018
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ... Science advances 5 (8), eaax1325, 2019	139	2019
S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities SV Suryavanshi, E Pop Journal of Applied Physics 120 (22), 2016	119	2016
Effective n-type doping of monolayer MoS₂ by AlO_x CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop 2017 75th annual device research conference (DRC), 1-2, 2017	63	2017
Thermal boundary conductance of two-dimensional MoS2 interfaces SV Suryavanshi, AJ Gabourie, A Barati Farimani, E Pop Journal of Applied Physics 126 (5), 2019	51	2019
Reduced thermal conductivity of supported and encased monolayer and bilayer MoS2 AJ Gabourie, SV Suryavanshi, AB Farimani, E Pop 2D Materials 8 (1), 011001, 2020	44	2020
Real-time* multiple object tracking (MOT) for autonomous navigation A Agarwal, S Suryavanshi Technical report, 2017	24	2017
2D Device Trends CJ McClellan, SV Suryavanshi, CD English, KKH Smithe, CS Bailey, ... unpublished, 0	16
Physics-based compact model for circuit simulations of 2-dimensional semiconductor devices SV Suryavanshi, E Pop 2015 73rd Annual Device Research Conference (DRC), 235-236, 2015	15	2015
Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs CA Paz de Araujo, J Celinska, CR McWilliams, L Shifren, G Yeric, ... Apl Materials 10 (4), 2022	8	2022
Enhanced Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices KKH Smithe, CD English, SV Suryavanshi, E Pop arXiv preprint arXiv:1608.00987, 2016	6	2016
Thermal boundary conductance of the MOS₂-SiO₂interface SV Suryavanshi, AJ Gabourie, AB Farimani, E Yalon, E Pop 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 26-29, 2017	5	2017
Scaling theory of two-dimensional field effect transistors SV Suryavanshi, CD English, HSP Wong, E Pop arXiv preprint arXiv:2105.10791, 2021	4	2021
Stanford 2D Semiconductor (S2DS) Transistor Model SV Suryavanshi, E Pop Version 1.1. 0). nanoHUB. doi: 10.4231/D3ZC7RV9X, 2016	4	2016
High mobility in monolayer MoS₂ devices grown by chemical vapor deposition KKH Smithe, CD English, SV Suryavanshi, E Pop 2015 73rd Annual Device Research Conference (DRC), 239-240, 2015	4	2015

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