Indium segregation in AlInN/AlN/GaN heterostructures A Minj, D Cavalcoli, A Cavallini
Applied Physics Letters 97 (13), 2010
64 2010 The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires T Auzelle, B Haas, A Minj, C Bougerol, JL Rouvière, A Cros, J Colchero, ...
Journal of Applied Physics 117 (24), 2015
61 2015 Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics Y Shi, B Groven, J Serron, X Wu, A Nalin Mehta, A Minj, S Sergeant, ...
ACS nano 15 (6), 9482-9494, 2021
47 2021 Assessment of polarity in GaN self-assembled nanowires by electrical force microscopy A Minj, A Cros, N Garro, J Colchero, T Auzelle, B Daudin
Nano Letters 15 (10), 6770-6776, 2015
47 2015 Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019
41 2019 Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La0. 67Sr0. 33MnO3 films SK Chaluvadi, F Ajejas, P Orgiani, S Lebargy, A Minj, S Flament, ...
Journal of Physics D: Applied Physics 53 (37), 375005, 2020
32 2020 Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy A Minj, A Cros, T Auzelle, J Pernot, B Daudin
Nanotechnology 27 (38), 385202, 2016
26 2016 First solar cells on exfoliated silicon foils obtained at room temperature by the SLIM-cut technique using an epoxy layer P Bellanger, A Slaoui, A Minj, R Martini, M Debucquoy, JM Serra
IEEE Journal of Photovoltaics 6 (5), 1115-1122, 2016
23 2016 Two-dimensional electron gas properties by current-voltage analyses of Al0. 86In0. 14N/AlN/GaN heterostructures S Pandey, B Fraboni, D Cavalcoli, A Minj, A Cavallini
Applied Physics Letters 99 (1), 2011
23 2011 Electrical properties of extended defects in III-nitrides A Minj, D Cavalcoli, GRM Popuri, A Vilalta-Clemente, P Ruterana, ...
Acta Materialia 89, 290-297, 2015
15 2015 Photoinduced Persistent Electron Accumulation and Depletion in Y Chen, Y Lechaux, B Casals, B Guillet, A Minj, J Gazquez, L Méchin, ...
Physical Review Letters 124 (24), 246804, 2020
14 2020 Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure H Ben Ammar, A Minj, P Gamarra, C Lacam, M Tordjman, ...
physica status solidi (a) 214 (4), 1600441, 2017
14 2017 Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD P Chauhan, S Hasenöhrl, E Dobročka, MP Chauvat, A Minj, F Gucmann, ...
Journal of Applied Physics 125 (10), 2019
13 2019 Interface dislocations in Inx 1–x N/GaN heterostructures QT Li, A Minj, MP Chauvat, J Chen, P Ruterana
physica status solidi (a) 214 (4), 1600442, 2017
13 2017 Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis A Minj, D Cavalcoli, A Cavallini, P Gamarra, MA di Forte Poisson
Nanotechnology 24 (14), 145701, 2013
13 2013 Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer P Chauhan, S Hasenöhrl, A Minj, MP Chauvat, P Ruterana, J Kuzmík
Applied Surface Science 502, 144086, 2020
11 2020 Surface properties of AlInGaN/GaN heterostructure A Minj, D Skuridina, D Cavalcoli, A Cros, P Vogt, M Kneissl, C Giesen, ...
Materials Science in Semiconductor Processing 55, 26-31, 2016
11 2016 Mobility-limiting mechanisms in polar semiconductor heterostructures S Pandey, D Cavalcoli, A Minj, B Fraboni, A Cavallini, D Skuridina, P Vogt, ...
Acta materialia 60 (6-7), 3176-3180, 2012
11 2012 Nanocrack-induced leakage current in AlInN/AlN/GaN A Minj, D Cavalcoli, S Pandey, B Fraboni, A Cavallini, T Brazzini, F Calle
Scripta Materialia 66 (6), 327-330, 2012
11 2012 Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures A Minj, D Cavalcoli, A Cavallini
Nanotechnology 23 (11), 115701, 2012
11 2012 
Daniela CavalcoliPhysics and Astronomy Dept University of BolognaEmail verificata su bo.infn.it