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Vladimir Dubrovskii
Vladimir Dubrovskii
Email verificata su corp.ifmo.ru
Titolo
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Citata da
Anno
Growth kinetics and crystal structure of semiconductor nanowires
VG Dubrovskii, NV Sibirev, JC Harmand, F Glas
Physical Review B—Condensed Matter and Materials Physics 78 (23), 235301, 2008
4082008
Nucleation theory and growth of nanostructures
VG Dubrovskii
Springer, 2014
3992014
Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment
VG Dubrovskii, GE Cirlin, IP Soshnikov, AA Tonkikh, NV Sibirev, ...
Physical Review B—Condensed Matter and Materials Physics 71 (20), 205325, 2005
3792005
Self-catalyzed, pure zincblende GaAs nanowires grown on Si (111) by molecular beam epitaxy
GE Cirlin, VG Dubrovskii, YB Samsonenko, AD Bouravleuv, K Durose, ...
Physical Review B—Condensed Matter and Materials Physics 82 (3), 035302, 2010
2662010
Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy
VG Dubrovskii, NV Sibirev, GE Cirlin, JC Harmand, VM Ustinov
Physical Review E—Statistical, Nonlinear, and Soft Matter Physics 73 (2 …, 2006
2542006
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov, WH Chen, R Larde, ...
Physical Review B—Condensed Matter and Materials Physics 79 (20), 205316, 2009
2502009
Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires
VG Dubrovskii, NV Sibirev
Physical Review B—Condensed Matter and Materials Physics 77 (3), 035414, 2008
2322008
Semiconductor nanowhiskers: synthesis, properties, and applications
VG Dubrovskii, GE Cirlin, VM Ustinov
Semiconductors 43, 1539-1584, 2009
2222009
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ...
Journal of Applied Physics 102 (9), 2007
1912007
New mode of vapor− liquid− solid nanowire growth
VG Dubrovskii, GE Cirlin, NV Sibirev, F Jabeen, JC Harmand, P Werner
Nano letters 11 (3), 1247-1253, 2011
1812011
Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates
GE Cirlin, VG Dubrovskii, IP Soshnikov, NV Sibirev, YB Samsonenko, ...
physica status solidi (RRL)–Rapid Research Letters 3 (4), 112-114, 2009
1792009
Kinetics of the initial stage of coherent island formation in heteroepitaxial systems
VG Dubrovskii, GE Cirlin, VM Ustinov
Physical Review B 68 (7), 075409, 2003
1752003
Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires
VG Dubrovskii, NV Sibirev
Physical Review E—Statistical, Nonlinear, and Soft Matter Physics 70 (3 …, 2004
1702004
Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires
VG Dubrovskii, T Xu, AD Álvarez, SR Plissard, P Caroff, F Glas, ...
Nano letters 15 (8), 5580-5584, 2015
1452015
Template-assisted scalable nanowire networks
M Friedl, K Cerveny, P Weigele, G Tütüncüoglu, S Martí-Sánchez, ...
Nano letters 18 (4), 2666-2671, 2018
1412018
Phase selection in self-catalyzed GaAs nanowires
F Panciera, Z Baraissov, G Patriarche, VG Dubrovskii, F Glas, L Travers, ...
Nano letters 20 (3), 1669-1675, 2020
1352020
Role of nonlinear effects in nanowire growth and crystal phase
VG Dubrovskii, NV Sibirev, GE Cirlin, AD Bouravleuv, YB Samsonenko, ...
Physical Review B—Condensed Matter and Materials Physics 80 (20), 205305, 2009
1272009
General form of the dependences of nanowire growth rate on the nanowire radius
VG Dubrovskii, NV Sibirev
Journal of crystal growth 304 (2), 504-513, 2007
1182007
Quantitative description for the growth rate of self-induced GaN nanowires
V Consonni, VG Dubrovskii, A Trampert, L Geelhaar, H Riechert
Physical Review B—Condensed Matter and Materials Physics 85 (15), 155313, 2012
1172012
Record pure zincblende phase in GaAs nanowires down to 5 nm in radius
E Gil, VG Dubrovskii, G Avit, Y André, C Leroux, K Lekhal, J Grecenkov, ...
Nano letters 14 (7), 3938-3944, 2014
1152014
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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