Segui
Tae-Sik Yoon
Tae-Sik Yoon
Professor of Materials Science and Engnieering, Ulsan National Institute of Science and Technology
Email verificata su unist.ac.kr - Home page
Titolo
Citata da
Citata da
Anno
Comparison of the agglomeration behavior of Au and Cu films sputter deposited on silicon dioxide
JY Kwon, TS Yoon, KB Kim, SH Min
Journal of applied physics 93 (6), 3270-3278, 2003
2362003
Effect of P3HT: PCBM concentration in solvent on performances of organic solar cells
WH Baek, H Yang, TS Yoon, CJ Kang, HH Lee, YS Kim
Solar Energy Materials and Solar Cells 93 (8), 1263-1267, 2009
1922009
Use of fluorine-doped tin oxide instead of indium tin oxide in highly efficient air-fabricated inverted polymer solar cells
WH Baek, M Choi, TS Yoon, HH Lee, YS Kim
Applied Physics Letters 96 (13), 2010
1432010
Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition
SS Yim, DJ Lee, KS Kim, SH Kim, TS Yoon, KB Kim
Journal of Applied Physics 103 (11), 2008
1042008
Composition-dependent phase separation of P3HT: PCBM composites for high performance organic solar cells
WH Baek, TS Yoon, HH Lee, YS Kim
Organic Electronics 11 (5), 933-937, 2010
902010
Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO2 nanopores
WH Baek, IL Seo, TS Yoon, HH Lee, CM Yun, YS Kim
Solar Energy Materials and Solar Cells 93 (9), 1587-1591, 2009
862009
Compliance current-controlled conducting filament formation in tantalum oxide-based RRAM devices with different top electrodes
TS Lee, NJ Lee, H Abbas, HH Lee, TS Yoon, CJ Kang
ACS Applied Electronic Materials 2 (4), 1154-1161, 2020
822020
Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices
H Abbas, A Ali, J Jung, Q Hu, MR Park, HH Lee, TS Yoon, CJ Kang
Applied Physics Letters 114 (9), 2019
742019
Digital versus analog resistive switching depending on the thickness of nickel oxide nanoparticle assembly
HJ Kim, YJ Baek, YJ Choi, CJ Kang, HH Lee, HM Kim, KB Kim, TS Yoon
Rsc Advances 3 (43), 20978-20983, 2013
662013
Method for forming quantum dot in semiconductor device and a semiconductor device resulting therefrom
KB Kim, TS Yoon, JY Kwon
US Patent 6,194,237, 2001
572001
A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications
H Abbas, Y Abbas, SN Truong, KS Min, MR Park, J Cho, TS Yoon, ...
Semiconductor Science and Technology 32 (6), 065014, 2017
552017
Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4
SH Kim, ES Hwang, BM Kim, JW Lee, HJ Sun, TE Hong, JK Kim, H Sohn, ...
Electrochemical and Solid-State Letters 8 (10), C155, 2005
492005
Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO2/Pt structure
HJ Kim, H Zheng, JS Park, DH Kim, CJ Kang, JT Jang, DH Kim, TS Yoon
Nanotechnology 28 (28), 285203, 2017
472017
Single and Multiple‐Step Dip‐Coating of Colloidal Maghemite (γ‐Fe2O3) Nanoparticles onto Si, Si3N4, and SiO2 Substrates
TS Yoon, J Oh, SH Park, V Kim, BG Jung, SH Min, J Park, T Hyeon, ...
Advanced Functional Materials 14 (11), 1062-1068, 2004
472004
Organic memory device with polyaniline nanoparticles embedded as charging elements
YH Kim, M Kim, S Oh, H Jung, Y Kim, TS Yoon, YS Kim, H Ho Lee
Applied Physics Letters 100 (16), 2012
442012
Multimode threshold and bipolar resistive switching in bi-layered Pt-Fe2O3 core-shell and Fe2O3 nanoparticle assembly
JY Lee, YJ Baek, Q Hu, Y Jin Choi, C Jung Kang, HH Lee, HM Kim, ...
Applied Physics Letters 102 (12), 2013
412013
Enhancement of electrochromic response and cyclic durability of WO3 thin films by stacking Nb2O5 layers
YJ Park, KM Kang, JH Kang, SH Han, HS Jang, JY Lee, TS Yoon, YC Nah, ...
Applied Surface Science 582, 152431, 2022
402022
Analog reversible nonvolatile memcapacitance in metal-oxide-semiconductor memcapacitor with ITO/HfOx/Si structure
D Park, P Yang, HJ Kim, K Beom, HH Lee, CJ Kang, TS Yoon
Applied Physics Letters 113 (16), 2018
402018
Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes
JD Kim, YJ Baek, Y Jin Choi, C Jung Kang, H Ho Lee, HM Kim, KB Kim, ...
Journal of Applied Physics 114 (22), 2013
402013
Tunable threshold resistive switching characteristics of Pt–Fe 2 O 3 core–shell nanoparticle assembly by space charge effect
YJ Baek, Q Hu, JW Yoo, YJ Choi, CJ Kang, HH Lee, SH Min, HM Kim, ...
Nanoscale 5 (2), 772-779, 2013
392013
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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